所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 包装 | 3E-Line |
| 配置 | Single |
| 类型 | PNP |
| 最大集电极发射极电压 | 120 V |
| 峰值直流集电极电流 | 1 A |
| 最小直流电流增益 | 3000@10mA@5V|3000@100mA@5V|3000@1A@5V|2000@2A@5V |
| 最大集电极发射极饱和电压 | 1.3@1mA@1A|2.5@2mA@2A V |
| 最大集电极基极电压 | 140 V |
| 安装 | Through Hole |
| 标准包装 | Bulk |
| 单位包 | 4000 |
| 最小起订量 | 4000 |
| 电流 - 集电极( Ic)(最大) | 1A |
| 晶体管类型 | PNP - Darlington |
| 安装类型 | Through Hole |
| 频率 - 转换 | 160MHz |
| 下的Vce饱和度(最大) Ib,Ic条件 | 2.5V @ 2mA, 2A |
| 电流 - 集电极截止(最大) | 10µA |
| 电压 - 集电极发射极击穿(最大) | 120V |
| 供应商设备封装 | E-Line (TO-92 compatible) |
| 封装 | Bulk |
| 功率 - 最大 | 1W |
| 封装/外壳 | E-Line-3 |
| 直流电流增益( hFE)(最小值) Ic,Vce时 | 3000 @ 1A, 5V |
| RoHS指令 | Lead free / RoHS Compliant |
| 工厂包装数量 | 4000 |
| 产品种类 | Transistors Darlington |
| 晶体管极性 | PNP |
| 发射极 - 基极电压VEBO | 10 V |
| 直流集电极/增益hfe最小值 | 3000 at 10 mA at 5 V, 3000 at 100 mA at 5 V, 3000 at 1 A at 5 V, 2000 at 2 A at 5 V |
| 集电极最大直流电流 | 1 A |
| 最大集电极截止电流 | 0.1 uA |
| 集电极 - 发射极最大电压VCEO | 120 V |
| 安装风格 | Through Hole |
| 功率耗散 | 1 W |
| 集电极 - 基极电压VCBO | 140 V |
| 最低工作温度 | - 55 C |
| 最高工作温度 | + 150 C |
| RoHS | RoHS Compliant |
| 连续集电极电流 | - 1 A |
| Collector Emitter Voltage V(br)ceo | :120V |
| Transition Frequency ft | :160MHz |
| 功耗 | :1W |
| DC Collector Current | :1A |
| DC Current Gain hFE | :3000 |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :200°C |
| Transistor Case Style | :E-Line |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Av Current Ic | :1A |
| Collector Emitter Voltage Vces | :-1.3V |
| 连续集电极电流Ic最大 | :1A |
| Current Ic Continuous a Max | :1A |
| Current Ic hFE | :1A |
| Device Marking | :ZTX705 |
| Full Power Rating Temperature | :25°C |
| Gain Bandwidth ft Typ | :160MHz |
| Hfe Min | :3000 |
| No. of Transistors | :1 |
| 工作温度范围 | :-55°C to +200°C |
| Power Dissipation Ptot Max | :1W |
| Voltage Vcbo | :140V |
| Weight (kg) | 0.000001 |
| Tariff No. | 85412900 |
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