DN2540 MOSFET 系列
Microchip Technology Inc.MOSFET 400V 25Ω
Microchip Technology Inc. 的 DN2540 系列是一款适用于最高 400V 电压的小信号 N 沟道 MOSFET，其导通电阻为 25Ω。这些 MOSFET 尺寸紧凑，非常适合空间受限的应用，同时仍能提供不错的性能。
如果您需要对开关进行精确控制并尽量减少功率损耗，那么这些 MOSFET 是一个不错的选择。它们常用于电池充电器、LED 驱动器和开关稳压器等应用中，其中电压调节和高效的功率转换至关重要。值得一提的是，它们的低导通电阻有助于在运行过程中最大限度地减少功率损耗，使其特别适用于高频开关应用。
当工程师们需要一种可靠且成本效益高的小信号开关解决方案时，往往会选择这一系列 MOSFET。TO-92 封装确保了其易于集成到现有设计中，而不同型号的广泛可用性则允许根据具体需求灵活选择合适的型号。无论是设计便携式设备还是紧凑型电源供应器，DN2540 系列都提供了兼具性能与成本效益的稳健选项。
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DN2540 MOSFET - 型号列表
共 20 个型号| 制造商零件编号 | 库存 | 价格 | 产品类别 | 导通电阻（最大） | 最大栅源电压 Vgs | 通道类型 | 工作温度 | 集电极-发射极饱和电压（最大）@ Vge, Ic | 工厂包装数量 | RoHS | 晶体管类型 | 通道数量 | 连续漏极电流（Id）@ 25°C | 包装方式 | 安装样式 | 封装形式 | 技术 | 制造商全称 | 下降时间 | 上升时间（典型） | 首抽头延迟 | 平均正向功率 | 开关时间（Ton, Toff）（最大） | 宽度 | 高度 | 长度 | 配置 | 元件数量 | 最大功耗 | 包装数量 | 安装类型 | 产品 | 位数 | 标准包装数量 | FET类型 | FET特性 | 最大功率 | 导通电阻 Rds(on) (最大) @ Id, Vgs | 漏源电压（Vdss） | 输入电容（Ciss）（最大）@ Vds | 供应商器件封装 | 标准封装名称 | 欧盟RoHS | 击穿电压 | 峰值脉冲电流（10/1000µs） | 额定功率 | 漏极电流（Idss）@ Vds（Vgs=0） | 类型 | 极性 | 引脚样式 | 开通延迟时间 | 输出功能 | 关断延迟时间 | 供电电压 | 输入电阻 | Vgs(th)（最大）@ Id | 栅极电荷（Qg）（最大）@ Vgs | 跳闸后电阻（R1）（最大） | 引脚数 | 尺寸/外形 | 功能 | 变体后缀 | 其他规格 | 抗辐射加固 | 冷却的封装 |
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| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 1000 | TO-92 | - | - | 3 | - | - | - | - | - | - | - | - | TO-92 | Not Compliant | 400 | 0.12 | - | - | - | - | Formed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 1600 | SOT-89 | - | - | 4 | - | - | - | - | - | - | - | - | SOT-89 | Not Compliant | 400 | 0.17 | - | - | - | - | Flat | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 15000 | TO-220 | - | - | 3 | - | - | - | - | - | - | - | - | TO-220 | Not Compliant | 400 | 0.5 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25 ohm | �20 V | Depletion | -55C to 150C | 400 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | Through Hole | - | 3 +Tab | - | - | - | - | - | - | - | - | - | - | - | - | 15 W | 0.5 A | Power MOSFET | N | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | TO-220 | |
 MOSFET N-CH 400V 120MA 3TO-92 Small Signal FET TO-92 N 400 V, DN2540N3-G, Microchip Microchip , N沟道 MOSFET, 120 mA, Vds=400 V, 3针 TO-92封装 MOSFET 400V 25Ohm Microchip Technology | 694 | 65: ¥8.4449 | - | 25 Ohms | 20 V | N | +150 °C | 400 V | 1000 | RoHS Compliant | Si | 1 Channel | 120mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 0.165in | 0.21in | 5.2mm | Single | 1 | 1 W | TO-92 | * | - | - | 1,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | 1 | 150 mA | FET | N | - | 10 ns | 消耗 | 15 ns | 400 V | 25 Ω | 3.5V | ±20 V | 25 Ohm@ 120 mA | 3 | 0.205 x 0.165 x 0.21in | Y | Depletion mode | 400 V | - | - |
 MOSFET N-CH 400V 500MA 3TO-220 Small Signal FET TO-220 N 400 V, DN2540N5-G, Microchip Microchip , N沟道 MOSFET, 500 mA, Vds=400 V, 3针 TO-220封装 MOSFET 400V 25Ohm Microchip Technology | 611 | 1: ¥11.968 | - | 25 Ohms | 20 V | N | +150 °C | 400 V | 50 | RoHS Compliant | Si | 1 Channel | 500mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 15 W | 10 ns | 0.19in | 0.65in | 10.6mm | Single | 1 | 15 W | TO-220 | * | - | - | 50 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 15W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | 15 | 150 mA | - | N | - | 10 ns | 消耗 | 15 ns | 400 V | 25 Ω | 3.5V | ±20 V | 25 Ohm@ 120 mA | 3 | 0.42 x 0.19 x 0.65in | Y | Depletion mode | 400 V | - | - |
 MOSFET N-CH 400V 120MA 3TO-92 MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 Microchip Technology | 10 | 2: ¥6.0459 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | * | MOSFET Small Signal | - | 2,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 | 157 | 40: ¥12.0904 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 170mA (Tj) | * | SMD/SMT | * | Si | Microchip Technology | 15 ns | 15 ns | 15 ns | 1.6 W | 10 ns | 2.6 mm | 1.6 mm | 4.6 mm | Single | - | - | - | * | MOSFET Small Signal | - | 2,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1.6W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | - | - | FET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 0 | - | 25 Ohms | - | - | - | 400 V | 2000 | RoHS Compliant | 1 N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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