MR4A08B Memory 系列型号列表/参数/数据手册

如果您的项目需要具有超快读写速度和低功耗的非易失性内存，Everspin Technologies 的 MR4A08B 系列可能正是您所需要的。该系列由16Mbit并行磁阻随机存取存储器(MRAM)集成电路组成，专为高速非易失性存储设计。这些设备的工作电压为3.3V，并采用44引脚TSOP-II封装，适用于各种嵌入式系统、汽车应用以及对可靠性和速度要求较高的物联网设备。值得一提的是，其45ns访问时间令人印象深刻，这意味着设备可以快速读写数据，降低延迟并提高整体系统性能。工程师在需要一种能够在速度上与易失性内存竞争的非易失性内存解决方案时，往往会选择这一系列。48BGA和44-TSOP2封装也为电路板设计提供了灵活性，满足不同的外形尺寸和空间限制需求。另一个实用方面是提供BGA和TSOP2两种封装选项，以适应不同的热管理和机械要求。该系列包括预认证和全生产版本的产品，确保开发人员可以在开发早期阶段获得可靠的组件。

总体而言，MR4A08B 系列是一款适用于对高速、非易失性内存以及低功耗和快速存取时间有高要求的应用的稳健选择。

制造商零件编号	库存	价格	产品类别	存储器容量	存储器类型	供电电压	包装方式	封装形式	供应商器件封装	存储器格式	工作温度	标准包装数量	RoHS	转速	接口	系列	存取时间	制造商全称	核心数/总线宽度	安装类型	供电电流	平均整流电流 Io	安装样式	最小供电电压	类型	密度	位数	工厂包装数量	欧盟RoHS	额定电压	最大额定电流	制造商	技术	零件状态	存储器接口	基础产品编号	存储器架构	DigiKey可编程	写入周期时间 - 字、页	抗辐射加固	频率	输出电流	冷却的封装	连接器用途	标准封装名称	共模瞬态抗扰度（最小）	宽度	引脚样式	总长度	包装数量	外壳尺寸-插件	印刷电路板数量
MR4A08BCMA35 NVRAM IC MRAM 16MBIT 35NS 48BGA NVRAM MRAM Parallel 16M-Bit 3.3V 48-Pin FBGA Tray NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM Everspin Technologies	354	1: ¥270.98	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tray	48-LFBGA	48-FBGA (10x10)	RAM	-40°C ~ 85°C	240	Lead free / RoHS Compliant	35ns	Parallel	MR4A08B	35 ns	2Mx8	-	Surface Mount	-	-	-	3 V	MRAM	16777216 Bit	48	-	-	-	-	-	-	-	-	-	-	-	-	No	35ns	180 mA	FBGA	Parallel	-	-	-	-	-	-	-	-
2 MR4A08BMA35 NVRAM IC MRAM 16MBIT 35NS 48BGA Everspin Technologies	314	1: ¥227.324	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 36 V	Tray	48-LFBGA	48-FBGA (10x10)	RAM	0°C ~ 70°C	240	Lead free / RoHS Compliant	35ns	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BCMA35R NVRAM IC MRAM 16MBIT 35NS 48BGA Everspin Technologies	10	2500: ¥170.7616	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tape & Reel (TR)	48-LFBGA	48-FBGA (10x10)	RAM	-40°C ~ 85°C	2,500	Lead free / RoHS Compliant	35ns	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BMA35R NVRAM IC MRAM 16MBIT 35NS 48BGA Everspin Technologies	10	2500: ¥159.0248	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 36 V	Tape & Reel (TR)	48-LFBGA	48-FBGA (10x10)	RAM	0°C ~ 70°C	2,500	Lead free / RoHS Compliant	35ns	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 MR4A08BCYS35R NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM Everspin Technologies	10	1092: ¥186.32	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tape & Reel (TR)	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	-40°C ~ 85°C	1,000	RoHS Compliant	35ns	Parallel	MR4A08B	35 ns	2 M x 8	8 bit	-	100 mA	100 mA	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 MR4A08BYS35R NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM Everspin Technologies	10	1091: ¥173.536	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tape & Reel (TR)	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	0°C ~ 70°C	1,000	RoHS Compliant	35ns	Parallel	MR4A08B	35 ns	2 M x 8	8 bit	-	100 mA	100 mA	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 MR4A08BCYS35 NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM NVRAM MRAM Parallel 16M-Bit 3.3V 44-Pin TSOP-II Tray IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM Everspin Technologies	146	1: ¥244.256	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 36 V	Tray	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	-40°C ~ 85°C	135	Lead free / RoHS Compliant	35ns	Parallel	MR4A08B	35 ns	2Mx8	8 bit	Surface Mount	100 mA	100 mA	SMD/SMT	3.6	MRAM	16M	44	135	Compliant	3	180	-	-	-	-	-	-	-	-	-	-	-	-	-	TSOP	Industrial	10.29(Max)	Gull-wing	18.54(Max)	TSOP-II	1.05(Max)	44
2 MR4A08BYS35 NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM Everspin Technologies	139	1: ¥252.212	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 36 V	Tray	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	0°C ~ 70°C	135	RoHS Compliant	35ns	Parallel	MR4A08B	35 ns	2 M x 8	8 bit	-	100 mA	100 mA	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BMYS35 NVRAM MRAM Parallel 16M-Bit 3.3V Tray IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns pre-qual sample MRAM EverSpin Technologies	10	270: ¥228.3848	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tray	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	-40°C ~ 125°C	135	Lead free / RoHS Compliant	35ns	Parallel	MR4A08B	-	2Mx8	8	-	-	-	-	3.6	MRAM	16M	-	135	Compliant	3	180	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BMYS35R IC MRAM 16MBIT 35NS 44TSOP NVRAM 16Mb 3.3V 35ns pre-qual sample MRAM Everspin Technologies Inc	10	1500: ¥209.7256	-	16M (2M x 8)	MRAM (Magnetoresistive RAM)	3 V ~ 3.6 V	Tape & Reel (TR)	44-TSOP (0.400", 10.16mm Width)	44-TSOP2 (10.2x18.4)	RAM	-40°C ~ 125°C	1,500	RoHS Compliant	35ns	Parallel	MR4A08B	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BUYS45R . MR4A08BUYS45R - MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 44-TSOP2 from Everspin Technologies Inc.. from now! Everspin Technologies, Inc.	10	1500: ¥409.141	-	16Mbit	Non-Volatile	3V ~ 3.6V	Tape & Reel (TR)	44-TSOP (0.400", 10.16mm Width)	44-TSOP2	RAM	-40°C ~ 125°C (TA)	-	-	-	-	-	45 ns	-	-	Surface Mount	-	-	-	-	-	-	-	-	-	-	-	Everspin Technologies Inc.	MRAM (Magnetoresistive RAM)	Active	Parallel	MR4A08	2M x 8	Not Verified	45ns	-	-	-	-	-	-	-	-	-	-	-	-	-
MR4A08BUYS45 . MR4A08BUYS45 - MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 44-TSOP2 from Everspin Technologies Inc.. from now! Everspin Technologies, Inc.	267	1: ¥563.04	-	16Mbit	Non-Volatile	3V ~ 3.6V	Tray	44-TSOP (0.400", 10.16mm Width)	44-TSOP2	RAM	-40°C ~ 125°C (TA)	-	-	-	-	-	45 ns	-	-	Surface Mount	-	-	-	-	-	-	-	-	-	-	-	Everspin Technologies Inc.	MRAM (Magnetoresistive RAM)	Active	Parallel	MR4A08	2M x 8	Not Verified	45ns	-	-	-	-	-	-	-	-	-	-	-	-	-

MR4A08B Memory

MR4A08B Memory 系列

常见问答

MR4A08B Memory - 型号列表

标准包装数量

工作温度

供电电压

供应商器件封装

RoHS

存取时间

存储器容量

存储器类型

最小供电电压

包装方式

封装形式

位数

密度

制造商全称

核心数/总线宽度