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MR25H40 semiconductor 系列

3.3V 4Mb SPI NVRAM MRAM芯片,紧凑型8引脚DFN封装

Everspin Technologies的MR25H40系列是一款采用磁阻随机存取存储器(MRAM)技术的3.3V、4MB串行外设接口(SPI)非易失性随机存取存储器(NVRAM)设备。这些芯片采用小型8引脚DFN封装,适用于空间受限的应用。如果您正在开发需要高速、非易失性存储且功耗低、写入速度快的项目,这些MRAM芯片非常适合。值得一提的是它们出色的耐久性——MRAM可以在不降级的情况下承受数百万次写入周期,这在磨损平衡场景中比传统闪存具有明显优势。另一个实用的好处是即使在没有电源的情况下也能保持数据,使其非常适合电池供电的设备或在断电期间需要保证数据完整性的系统。

系列图片(3 张)

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MR25H40 semiconductor - 型号列表

共 9 个型号

供电电压

包装方式

工作温度

标准包装数量

RoHS

接口

存储器容量

存储器类型

最小供电电压

供应商器件封装

核心数/总线宽度

密度

制造商全称

频率

制造商零件编号库存价格产品类别存储器容量存储器类型供电电压包装方式封装形式供应商器件封装系列存储器格式工作温度标准包装数量RoHS转速接口制造商全称最小供电电压核心数/总线宽度供电电流平均正向功率最大功耗平均整流电流 Io安装类型存取时间位数类型密度抗辐射加固输出电流冷却的封装标准封装名称欧盟RoHS频率额定电压最大额定电流宽度引脚样式安装样式总长度包装数量外壳尺寸-插件印刷电路板数量其他名称共模瞬态抗扰度(最小)连接器用途已删除制造商等级技术零件状态资质认证存储器接口基础产品编号存储器架构DigiKey可编程写入周期时间 - 字、页
MR25H40MDCR

NVRAM

Everspin Technologies

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MR25H40MDC

NVRAM

Everspin Technologies

0-------------------------------------------------------
MR25H40CDF
3

NVRAM 4Mb 3.3V 512Kx8 SPI IC MRAM 4MBIT 40MHZ 8DFN NVRAM MRAM Serial-SPI 4M-Bit 3.3V 8-Pin DFN EP Tray

Everspin Technologies

101: ¥110.0406-4M (512K x 8)MRAM (Magnetoresistive RAM)3 V ~ 3.6 VTray8-VDFN Exposed Pad8-DFN-EP, Small Flag (5x6)MR25H40RAM-40°C ~ 85°C570RoHS Compliant40MHzSPI Serial512 K x 83 V to 3.6 V8 bit20 mA0.6 W0.6 W20 mASurface Mount9 ns8MRAM4194304 BitNo42 mADFN EP------------819-1040-------------
MR25H40CDC
2

NVRAM 4Mb 3V 512Kx8 Serial MRAM NVRAM MRAM Serial-SPI 4M-Bit 3.3V 8-Pin DFN EP Tray IC MRAM 4MBIT 40MHZ 8DFN

Everspin Technologies

201: ¥167.178-4M (512K x 8)MRAM (Magnetoresistive RAM)3 V ~ 3.6 VTray8-VDFN Exposed Pad8-DFN-EP, Large Flag (5x6)MR25H40RAM-40°C ~ 85°C570Lead free / RoHS Compliant40MHzSerial-SPI512Kx83 V8----Surface Mount9 ns8MRAM4194304 BitNo42 mADFN EPDFNCompliant40MHz3426.1(Max)No LeadSMD/SMT5.1(Max)DFN EP0.95(Max)8-IndustrialSPI SerialCompliant----------
MR25H40CDFR
2

NVRAM 4Mb 3.3V 512Kx8 SPI IC MRAM 4MBIT 40MHZ 8DFN

Everspin Technologies

103010: ¥68.68-4M (512K x 8)MRAM (Magnetoresistive RAM)3 V ~ 3.6 VTape & Reel (TR)8-VDFN Exposed Pad8-DFN-EP, Small Flag (5x6)MR25H40RAM-40°C ~ 85°C4,000RoHS Compliant40MHzSPI Serial512 K x 83 V to 3.6 V8 bit20 mA0.6 W0.6 W20 mA----------------------------------
MR25H40MDFR
2

NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM NVRAM MRAM Serial-SPI 4M-Bit 3.3V 8-Pin DFN EP T/R IC MRAM 4MBIT 40MHZ 8DFN

Everspin Technologies

103079: ¥101.796-4M (512K x 8)MRAM (Magnetoresistive RAM)2.7 V ~ 3.6 VTape and Reel8-VDFN Exposed Pad8-DFN-EP, Small Flag (5x6)MR25H40RAM-40°C ~ 125°C4,000Lead free / RoHS Compliant40MHzSerial-SPI512Kx83 V to 3.6 V8 bit20 mA0.6 W0.6 W20 mASurface Mount-8MRAM4M---DFNCompliant-3426.1(Max)No Lead-5.1(Max)DFN EP0.95(Max)8--------------
MR25H40MDF
2

NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM IC MRAM 4MBIT 40MHZ 8DFN NVRAM 4Mb 3.3V 512Kx8 SPI

Everspin Technologies

14711: ¥148.376-4M (512K x 8)MRAM (Magnetoresistive RAM)2.7 V ~ 3.6 VTray8-VDFN Exposed Pad8-DFN-EP, Small Flag (5x6)MR25H40RAM-40°C ~ 125°C570RoHS Compliant40MHzSPI Serial512 K x 83 V to 3.6 V8 bit20 mA0.6 W0.6 W20 mA----------------------------------
MR25H40CDCR
2

NVRAM 4Mb 3V 512Kx8 Serial MRAM IC MRAM 4MBIT 40MHZ 8DFN

Everspin Technologies

104000: ¥139.06-4M (512K x 8)MRAM (Magnetoresistive RAM)3 V ~ 3.6 VTape & Reel (TR)8-VDFN Exposed Pad8-DFN-EP, Large Flag (5x6)MR25H40RAM-40°C ~ 85°C4,000RoHS Compliant40MHzSPI Serial512 K x 8---------------------SMD/SMT------------------
MR25H40VDF

NVRAM 4Mb 3.3V 512Kx8 SPI MRAM

EVERSPIN TECHNOLOGIES

101: ¥225.76-4MbitNon-Volatile3V ~ 3.6VTray8-VDFN Exposed Pad8-DFN-EP, Small Flag (5x6)-RAM-40°C ~ 105°C (TA)-----------Surface Mount9 ns--------40 MHz-------------Everspin Technologies Inc.AutomotiveMRAM (Magnetoresistive RAM)ActiveAEC-Q100SPIMR25H40512K x 8Not Verified-
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