HGTP20N60A4 系列
TO-220封装大功率IGBT晶体管,适用于严苛电
HGTP20N60A4产品系列介绍
1. 概述
HGTP20N60A4产品系列代表了一系列先进的功率半导体器件,专门为满足现代电力电子应用的严苛要求而设计。这些器件采用先进的半导体技术制造,具备高性能、高可靠性和高效率的特点,使其成为广泛的工业、商业和消费应用的理想选择。
2. 关键特性
2.1 高电压额定值
HGTP20N60A4器件的额定电压高达600V。这种高电压能力使其能够应用于电源电压相对较高的场合,例如开关模式电源(SMPS)、电机驱动器和高压逆变器。能够承受高电压确保了整个系统的稳定性和安全性,因为该器件可以承受正常运行期间可能出现的电压尖峰和瞬变。
2.2 低导通电阻
HGTP20N60A4系列的显著特点之一是其低导通电阻(RDS(on))。低RDS(on)使得器件在导通电流时功耗更低,从而提高了效率并减少了热量产生。这在电力电子应用中至关重要,因为较低的功耗意味着更少的能量以热量形式浪费,进而减少了对复杂且庞大的冷却系统的需求。低导通电阻还使器件能够在无明显电压降的情况下处理大电流,提高了电路的整体性能。
2.3 快速开关速度
这些器件具备快速开关特性。快速的导通和关断时间允许进行高频操作,这在现代电力电子中至关重要。在诸如开关模式电源等应用中,高频操作使得能够使用更小、更轻的无源元件,如电感器和电容器,从而减小了整个系统的尺寸和成本。此外,快速开关速度可将开关损耗降至最低,进一步提高了器件的效率。
2.4 雪崩能量额定值
HGTP20N60A4系列具有较高的雪崩能量额定值。这意味着该器件能够承受高能瞬态事件,例如由感性负载或电压尖峰引起的事件。高雪崩能量额定值提高了器件的可靠性,因为它可以在异常运行条件下保护自身免受损坏,确保电力电子系统的长期稳定性。
3. 应用
3.1 开关模式电源(SMPS)
在开关模式电源中,HGTP20N60A4器件用作主要开关元件。其高电压额定值、低导通电阻和快速开关速度使其非常适合将高压交流电源高效地转换为低压直流电源。这些器件的低功耗和高频操作能力有助于减小开关模式电源的尺寸并提高其效率,使其成为包括计算机、电视和移动充电器等各种电子设备的理想选择。
3.2 电机驱动器
电机驱动器需要能够处理大电流和高电压,同时对电机的速度和转矩进行精确控制的功率半导体器件。HGTP20N60A4系列凭借其高电压和大电流处理能力以及快速开关速度满足了这些要求。这些器件可用于直流和交流电机驱动器,在工业自动化、机器人技术和电动汽车应用中实现高效可靠的电机控制。
3.3 逆变器
逆变器用于将直流电源转换为交流电源,常用于可再生能源系统,如太阳能逆变器和不间断 (原文此处未完整,推测可能是“不间断电源”之类表述)
系列图片(4 张)
常见问答
HGTP20N60A4 - 型号列表共 3 个型号
| 制造商零件编号 | 价格/库存 | Package | Configuration | Maximum Collector Emitter Voltage | Maximum Continuous Collector Current | Maximum Gate Emitter Voltage | Mounting | Standard Package | Supplier Package | Maximum Gate Emitter Voltage | Maximum Continuous Collector Current | EU RoHS | Maximum Operating Temperature | Package Width | Standard Package Name | Package Height | Maximum Power Dissipation | Channel Type | Packaging | Maximum Collector Emitter Voltage | Tab | PCB | Package Length | Minimum Operating Temperature | Pin Count | Lead Shape | Gate Charge | Current - Collector (Ic) (Max) | Mounting Type | Switching Energy | Td (on/off) @ 25°C | Vce(on) (Max) @ Vge, Ic | Voltage - Collector Emitter Breakdown (Max) | Supplier Device Package | Power - Max | Input Type | Package / Case | Test Condition | Current - Collector Pulsed (Icm) | rohs | Collector Current (DC) (Max) | Collector-Emitter Voltage | Package Type | Operating Temperature (Max) | Operating Temperature (Min) | Operating Temperature Classification | Gate to Emitter Voltage (Max) | Rad Hardened | Collector Current (DC) | Transistor Type | DC Collector Current | Collector Emitter Voltage Vces | Power Dissipation Pd | Collector Emitter Voltage V(br)ceo | Operating Temperature Min | Operating Temperature Max | Transistor Case Style | No. of Pins | MSL | SVHC | Current Ic Continuous a Max | Current Temperature | Fall Time tf | Full Power Rating Temperature | No. of Transistors | Operating Temperature Range | Pin Format | Power Dissipation Max | Power Dissipation Ptot Max | Pulsed Current Icm | Rise Time | Termination Type | Transistor Polarity | Voltage Vces | Weight (kg) | Tariff No. | Case | Transistor type | Power | Collector-emitter voltage | Multiplicity | Collector current | Gross weight | Collective package [pcs] | spg |
|---|
| 询价 | 3TO-220AB | Single | 600 V | 70 A | ±20 V | Through Hole | Rail / Tube | TO-220AB | ±20 | 70 | Compliant | 150 | 4.83(Max) | TO-220 | 9.4(Max) | 290000 | N | Rail | 600 | Tab | 3 | 10.67(Max) | -55 | 3 | Through Hole | 142nC | 70A | Through Hole | 105µJ (on), 150µJ (off) | 15ns/73ns | 2.7V @ 15V, 20A | 600V | TO-220AB | 290W | Standard | TO-220-3 | 390V, 20A, 3 Ohm, 15V | 280A | Lead free / RoHS Compliant | 70 A | 600 V | TO-220AB | 150C | -55C | Military | �20 V | No | 70 A | :IGBT | :70A | :2.7V | :290W | :600V | :-55°C | :150°C | :TO-220AB | :3 | :- | :No SVHC (20-Jun-2013) | :70A | :25°C | :32ns | :25°C | :1 | :-55°C to +150°C | :GCE | :290W | :290W | :280A | :12ns | :Through Hole | :N Channel | :600V | 0.002033 | 85423990 | TO220 | IGBT | 290W | 600V | 1 | 70A | 3.02 g | 100 | 100 | |
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