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HGTG27N 系列

harris-semiconductor
ti
onsemi
fairchild
rochester

大功率N沟道IGBT晶体管,TO-247封装

HGTG27N系列是一款高性能IGBT(绝缘栅双极型晶体管)模块产品线,专为严苛的工业及汽车应用场景设计,具有卓越的功率处理能力、能效和可靠性。该系列模块满足现代电力电子系统的严苛要求,为高压大电流开关操作提供稳健解决方案。凭借先进的散热管理和低导通损耗特性,HGTG27N系列即使在极端工况下仍能保持最佳性能。

本系列的核心优势在于其高电流/电压额定值,可精准控制大功率负载。采用业界领先的沟槽栅技术,显著降低开关损耗并提升整体能效,这一设计特性在高频开关应用中尤为关键,可有效优化能源效率与热性能。模块采用低电感封装设计,能减少电磁干扰(EMI),增强系统可靠性。

HGTG27N系列注重耐久性与集成便利性,紧凑的模块化外形可无缝适配各类电力电子系统,坚固结构确保在恶劣环境下的长期可靠性。模块配备高级绝缘材料,具备高介电强度,保障高压系统安全运行。

典型应用包括:电机驱动、可再生能源系统、不间断电源(UPS)及电动汽车(EV)动力总成。工业领域广泛应用于逆变器、变流器和焊接设备,其高效可靠特性可显著提升系统性能;汽车领域尤其适用于EV充电桩、牵引逆变器和混合动力系统等对紧凑尺寸与高功率密度有严格要求的场景。

作为电力电子设计领域的尖端解决方案,HGTG27N系列通过先进技术、坚固设计和多场景适应性的完美结合,成为高功率应用优化性能、能效与可靠性的行业首选。

系列图片(4 张)

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HGTG27N - 型号列表7 个型号

制造商零件编号价格/库存PackageConfigurationMaximum Collector Emitter VoltageMaximum Continuous Collector CurrentMaximum Gate Emitter VoltageMountingStandard PackageSupplier PackageMaximum Gate Emitter Voltage Maximum Continuous Collector Current EU RoHSMaximum Operating Temperature Standard Package NameChannel TypePackagingMaximum Collector Emitter Voltage Maximum Power Dissipation Minimum Operating Temperature Pin CountLead ShapeGate ChargeCurrent - Collector (Ic) (Max)Mounting TypeSwitching EnergyTd (on/off) @ 25°CVce(on) (Max) @ Vge, IcVoltage - Collector Emitter Breakdown (Max)Supplier Device PackagePower - MaxInput TypePackage / CaseIGBT TypeTest ConditionCurrent - Collector Pulsed (Icm)rohsCollector-Emitter VoltagePackage TypeOperating Temperature (Max)Operating Temperature (Min)Operating Temperature ClassificationGate to Emitter Voltage (Max)Rad HardenedCollector Current (DC) (Max)Collector Current (DC)Transistor TypeDC Collector CurrentCollector Emitter Voltage VcesPower Dissipation PdCollector Emitter Voltage V(br)ceoOperating Temperature MinOperating Temperature MaxTransistor Case StyleNo. of PinsMSLSVHCCurrent Ic Continuous a MaxOperating Temperature RangePower Dissipation MaxTermination TypeTransistor PolarityVoltage VcesWeight (kg)Tariff No.
HGTG27N120BN
4
HGTG27N120BN

Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail

fairchild semiconductor

询价3TO-247Single1200 V72 A±20 VThrough HoleRail / TubeTO-247±2072Compliant150TO-247NRail1200500000-553Through Hole270nC72AThrough Hole2.2mJ (on), 2.3mJ (off)24Ns/195ns2.7V @ 15V, 27A1200VTO-247500WStandardTO-247-3NPT960V, 27A, 3 Ohm, 15V216ALead free / RoHS Compliant1200 VTO-247150C-55CMilitary�20 VNo72 A72 A:IGBT:72A:2.7V:500W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):72A:-55°C to +150°C:500W:Through Hole:N Channel:1.2kV0.285411000
+HGTG27N120BN
+HGTG27N120BN

Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail

fairchild semiconductor

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HGTG27N60C3DR
HGTG27N60C3DR

Harris Semiconductor

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HGTG27N60C3R
HGTG27N60C3R

Harris Semiconductor

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HGTG27N120BN
HGTG27N120BN

IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins

ON SEMICONDUCTOR/FAIRCHILD

询价---------------------------------------------------------------
7 个型号