71V416S10BE 系列
3.3V 4兆位SRAM芯片 多用途
71V416S10BE系列是一系列高性能动态随机存取存储器（DRAM）产品，专为满足现代电子应用的严苛需求而设计。该系列以其卓越的速度和效率著称，是要求快速数据访问和处理能力的系统的理想选择。凭借支持高带宽和低延迟的稳健架构，71V416S10BE系列旨在提升数据密集型应用的性能，包括计算、游戏和电信领域。
71V416S10BE系列的一个关键特性是其先进的内置自测试（BIST）功能，该功能可实现对内存完整性的全面诊断和验证。在数据可靠性至关重要的应用中，这一特性尤为重要，因为它能最大限度地减少内存错误的风险，确保持续的高性能表现。此外，该系列还具有低功耗特性，适用于电池供电设备和节能系统。这种能效优势还辅以热管理设计，有效减少热量产生，从而延长组件的使用寿命并提高其可靠性。
71V416S10BE系列的设计特点兼顾了高性能和紧凑集成。凭借小巧的封装尺寸，这些内存模块可无缝集成到各种电子设备中，包括智能手机、平板电脑和嵌入式系统。它们还兼容多种行业标准接口，确保能够轻松集成到现有架构中。该系列支持广泛的温度范围，增强了其在从消费电子到工业应用等各种环境中的适应性。
71V416S10BE系列的典型应用包括高性能计算系统、网络设备和汽车电子，这些领域对快速数据处理和可靠性要求极高。该系列在涉及人工智能（AI）和机器学习（ML）的应用中尤为有利，因为这些应用需要快速访问大量数据集。总体而言，71V416S10BE系列作为一种可靠且高效的内存解决方案，满足了技术驱动行业不断变化的需求。
系列图片（2 张）
常见问答
71V416S10BE - 型号列表共 10 个型号
| 制造商零件编号 | 价格/库存 | Timing Type | Density | Number of Ports | Number of Words | Package | Typical Operating Supply Voltage | Address Bus Width | Number of I/O Lines | Operating Temperature | Standard Package | Packaging | Access Time | Part # Aliases | RoHS | Factory Pack Quantity | Width | Memory Size | Package / Case | Type | Brand | Memory Type | Maximum Operating Temperature | Operating Temperature Range | Length | Supply Voltage - Max | Interface Type | Organization | Supply Voltage - Min | Series | Height | Mounting Style | Supply Current - Max | Minimum Operating Temperature | Format - Memory | Supplier Device Package | Voltage - Supply | Interface | Speed | rohs | Typical Operating Supply Voltage | Standard Package Name | Maximum Operating Current | EU RoHS | Maximum Operating Temperature | Number of Bits per Word | Density | Maximum Access Time | Maximum Operating Supply Voltage | Minimum Operating Temperature | Supplier Package | Screening Level | Address Bus Width | Minimum Operating Supply Voltage | Pin Count | Lead Shape | Address Bus | Mounting | Operating Temp Range | Package Type | Word Size | Sync/Async | Operating Temperature Classification | Clock Freq (Max) | Architecture | Rad Hardened | Operating Supply Voltage (Typ) | Operating Supply Voltage (Min) | Operating Supply Voltage (Max) | Access Time (Max) | Supply Current | Clock Freq |
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 71V416S10BE8 SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | 0 to 70 °C | Tape & Reel | Reel | 10 ns | IDT71V416S10BE8 | No | 2000 | 9 mm | 4 Mbit | CABGA-48 | Asynchronous | IDT | SDR | + 70 C | 0 C to + 70 C | 9 mm | 3.6 V | Parallel | 256 k x 16 | 3 V | 71V416S10 | 1.2 mm | SMD/SMT | 200 mA | 0 C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 71V416S10BEGI SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | -40 to 85 °C | Bulk | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BEG SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | 0 to 70 °C | Trays | Tray | 10 ns | IDT71V416S10BEG | RoHS Compliant | 250 | 9 mm | 4 Mbit | CABGA-48 | Asynchronous | IDT | SDR | + 70 C | 0 C to + 70 C | 9 mm | 3.6 V | Parallel | 256 k x 16 | 3 V | 71V416S10 | 1.2 mm | SMD/SMT | 200 mA | 0 C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BEGI8 SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | -40 to 85 °C | Tape & Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 71V416S10BEG8 SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | 0 to 70 °C | Tape & Reel | Reel | 10 ns | IDT71V416S10BEG8 | RoHS Compliant | 2000 | 9 mm | 4M (256K x 16) | 48-TFBGA | Asynchronous | IDT | SRAM - Asynchronous | + 70 C | 0 C to + 70 C | 9 mm | 3.6 V | Parallel | 256 k x 16 | 3 V | 71V416S10 | 1.2 mm | SMD/SMT | 200 mA | 0 C | RAM | 48-CABGA (9x9) | 3 V ~ 3.6 V | Parallel | 10ns | Lead free / RoHS Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BE SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray integrated device technology (idt) | 询价 | Asynchronous | 4 Mb | 1 | 256 K | 48CABGA | 3.3 V | 18 Bit | 16 Bit | 0 to 70 °C | Rail / Tube | Tray | 10 ns | IDT71V416S10BE | No | 250 | 9 mm | 4 Mbit | CABGA-48 | Asynchronous | IDT | SDR | + 70 C | 0 C to + 70 C | 9 mm | 3.6 V | Parallel | 256 k x 16 | 3 V | 71V416S10 | 1.2 mm | SMD/SMT | 200 mA | 0 C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BEG SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tray Integrated Device Technology | 询价 | Asynchronous | 4194304 Bit | 1 | 256K | - | - | - | - | - | - | Tray | 10ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.3 | BGA | 200 | Compliant | 70 | 16 | 4M | 10 | 3.6 | 0 | CABGA | Commercial | 18 | 3 | 48 | Ball | 18 b | Surface Mount | 0C to 70C | CABGA | 16 b | Asynchronous | Commercial | Not Required MHz | Not Required | No | 3.3 V | 3 V | 3.6 V | 10ns | 200mA | Not Required MHz |
71V416S10BEI SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Integrated Device Technology (IDT) | 询价 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BEI8 SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CTBGA T/R Integrated Device Technology (IDT) | 询价 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
71V416S10BE Integrated Device Technology | 询价 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |