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制造商
Vishay Intertechnology, Inc.
晶体管（双极结型晶体管与可编程单结晶体管）

Vishay Intertechnology, Inc.- 晶体管（双极结型晶体管与可编程单结晶体管）

Vishay Intertechnology, Inc. 于1962年由 Felix Zandman 博士创立，总部位于美国宾夕法尼亚州马尔文市。公司是全球最大的分立半导体与被动电子元器件制造商之一，核心业务涵盖二极管、MOSFET、光电元件、电阻器、电感器和电容器的设计、制造与销售。在分立半导体领域，重点产品线包括 TrenchFET® MOSFET、肖特基二极管，以及用于传感与遥控的红外发射/探测器系列。被动元件方面，Vishay 提供业界领先的 IHLP® 大电流功率电感器、用于精密电流检测的 Power Metal Strip® 电阻器，以及 Tantamount® 品牌下的钽电容和 MLCC 等系列。产品广泛应用于工业、电源、汽车、计算、消费电子、通信、军事、航空和医疗等终端市场。Vishay 在功率分立器件和无源元件领域占据全球领先地位，以持续的技术创新和丰富的产品组合著称。通过“一站式”服务模式和成功的收购战略，公司能够为客户提供完整的器件解决方案。其制造设施遍布美洲、欧洲和亚洲，并是 Digi-Key 等分销商的重要合作伙伴，彰显了强大的全球供应能力。

MODELS

晶体管（双极结型晶体管与可编程单结晶体管） - 型号列表共 1 个型号

制造商零件编号	价格/库存	Package	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Maximum Gate Source Voltage	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Operating Temperature	Mounting	Standard Package	Maximum Gate Source Voltage	EU RoHS	Maximum Operating Temperature	Minimum Operating Temperature	Package Height	Maximum Power Dissipation	Channel Type	Packaging	Maximum Drain Source Resistance	Maximum Drain Source Voltage	Number of Elements per Chip	Package Width	Supplier Package	Package Length	PCB	Maximum Continuous Drain Current	Pin Count	Lead Shape	Unit Pack	MOQ	FET Feature	Mounting Type	Current - Continuous Drain (Id) @ 25° C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Power - Max	Package / Case	Input Capacitance (Ciss) @ Vds	Gate Charge (Qg) @ Vgs	rohs	Other Names	Continuous Drain Current	Gate-Source Voltage (Max)	Operating Temp Range	Package Type	Polarity	Type	Number of Elements	Operating Temperature Classification	Drain-Source On-Volt	Rad Hardened	DELETED	Power Dissipation	Weight (kg)	Tariff No.	Transistor Polarity	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Power Dissipation Pd	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	No. of Pins	MSL	Current Id Max	Operating Temperature Range	Voltage Vgs Max
3 SI7454CDP-T1-GE3 Trans MOSFET N-CH 100V 8.1A 8-Pin PowerPAK SO T/R vishay / siliconix	询价	8PowerPAK SO	Enhancement	100 V	8.1 A	30.5@10V mOhm	±20 V	10 ns	12 ns	17 ns	-55 to 150 °C	Surface Mount	Tape & Reel	±20	Compliant	150	-55	1.04	4100	N	Tape and Reel	30.5@10V	100	1	5.89	PowerPAK SO	4.9	8	8.1	8	No Lead	0	1	Standard	Surface Mount	22A (Tc)	2.8V @ 250µA	100V	PowerPAK® SO-8	30.5 mOhm @ 10A, 10V	MOSFET N-Channel, Metal Oxide	29.7W	PowerPAK® SO-8	580pF @ 50V	19.5nC @ 10V	Lead free / RoHS Compliant	SI7454CDP-T1-GE3CT	8.1 A	�20 V	-55C to 150C	PowerPAK SO	N	Power MOSFET	1	Military	100 V	No	Compliant	4.1 W	0	85412900	:N Channel	:22A	:100V	:25200µohm	:10V	:1.2V	:4.1W	:-55°C	:150°C	:PowerPAK SO	:8	:-	:8.1A	:-55°C to +150°C	:20V

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