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制造商
Vishay Intertechnology, Inc.
场效应晶体管（FET）

Vishay Intertechnology, Inc.- 场效应晶体管（FET）

Vishay Intertechnology, Inc. 于1962年由 Felix Zandman 博士创立，总部位于美国宾夕法尼亚州马尔文市。公司是全球最大的分立半导体与被动电子元器件制造商之一，核心业务涵盖二极管、MOSFET、光电元件、电阻器、电感器和电容器的设计、制造与销售。在分立半导体领域，重点产品线包括 TrenchFET® MOSFET、肖特基二极管，以及用于传感与遥控的红外发射/探测器系列。被动元件方面，Vishay 提供业界领先的 IHLP® 大电流功率电感器、用于精密电流检测的 Power Metal Strip® 电阻器，以及 Tantamount® 品牌下的钽电容和 MLCC 等系列。产品广泛应用于工业、电源、汽车、计算、消费电子、通信、军事、航空和医疗等终端市场。Vishay 在功率分立器件和无源元件领域占据全球领先地位，以持续的技术创新和丰富的产品组合著称。通过“一站式”服务模式和成功的收购战略，公司能够为客户提供完整的器件解决方案。其制造设施遍布美洲、欧洲和亚洲，并是 Digi-Key 等分销商的重要合作伙伴，彰显了强大的全球供应能力。

MODELS

场效应晶体管（FET） - 型号列表共 16,501 个型号

制造商零件编号	价格/库存	Package	Configuration	Operating Temperature	Mounting	Standard Package	Packaging	Mounting Type	Supplier Device Package	rohs	Pin Count	Package / Case	Package/Case	Minimum Operating Temperature	Maximum Operating Temperature	Package Type	Type	Product Category	Factory Pack Quantity	Mounting Style	RoHS	Unit Pack	MOQ	PCB	EU RoHS	Minimum Operating Temperature	Supplier Package	Standard Package Name	Maximum Operating Temperature	Package Length	Dimensions	PackageType	Lead Shape	Operating Temperature Classification	Rad Hardened	DELETED	Operating Temp Range	Width	Length	Height	Other Names	Package Width	Number of Elements per Chip	Operating Junction Temperature	Current,Surge	PowerDissipation	PrimaryType	Temperature,Junction,Maximum	Temperature,Operating	Peak Reverse Repetitive Voltage	Peak Average Forward Current	Peak Reverse Current	Peak Forward Voltage	Peak Non-Repetitive Surge Current	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max)	Thermal Resistance	Operating Temperature - Junction	Current - Average Rectified (Io)	Speed	Diode Type	Weight (kg)	Tariff No.	Polarity	Number of Elements	Forward Voltage Drop	Product	Forward Continuous Current	Max Surge Current	Maximum Gate Source Voltage	FET Type	Power - Max	Input Capacitance (Ciss) @ Vds	Operating Temperature Min	Operating Temperature Max	No. of Pins	Power Dissipation	Matchcode	Standard Leadtime	Leadfree Defin.	Part # Aliases	Maximum Power Dissipation	Maximum Power Dissipation	Operating Temperature Range	Channel Type	Transistor Polarity	Gate-Source Breakdown Voltage	Rds On	Rectifier Type	Reverse Voltage	Reverse Current IR	MSL	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Typical Fall Time	FET Feature	Current - Continuous Drain (Id) @ 25° C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) @ Vgs	Continuous Drain Current	Case	Multiplicity	Gross weight	Collective package [pcs]	spg	Automotive	Peak Reverse Recovery Time	Peak Reverse Current	Peak Non-Repetitive Surge Current	Peak Forward Voltage	Peak Reverse Repetitive Voltage	Peak Reverse Recovery Time	Maximum Continuous Forward Current	Reverse Recovery Time (trr)	Maximum Gate Source Voltage	Gate-Source Voltage (Max)	Maximum Continuous Forward Current	Peak Non-Repetitive Forward Surge Current	Termination Type	Current,Forward	Current,Reverse	Speed,Switching	Voltage,Forward	Voltage,Reverse	Package Height	Category	Maximum Drain Source Resistance	Typical Gate Charge @ Vgs	Typical Input Capacitance @ Vds	Current,Drain	GateCharge,Total	Polarization	Resistance,DraintoSourceOn	Temperature,Operating,Maximum	Temperature,Operating,Minimum	Time,Turn-OffDelay	Time,Turn-OnDelay	Transconductance,Forward	Voltage,Breakdown,DraintoSource	Voltage,Forward,Diode	Voltage,GatetoSource	Transistor type	Drain-source voltage	Polarisation	Drain current	Rise Time	Drain-Source Breakdown Voltage	Fall Time	Series	Capacitance @ Vr, F	Recovery Time	Maximum Drain Source Voltage	Maximum Drain Source Resistance	Maximum Continuous Drain Current	Tab	Drain Current (Max)	Frequency (Max)	Output Power (Max)	Noise Figure	Drain-Source On-Res	Drain Efficiency	Drain-Source On-Volt	Power Gain	Power	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Power Dissipation Pd	Transistor Case Style	Peak Non-Repetitive Surge Current (Max)	Peak Rep Rev Volt	Rev Curr	Rev Recov Time	Forward Voltage	Avg. Forward Curr (Max)	Maximum Reverse Leakage Current	Package Diameter	Diode Configuration	Repetitive Reverse Voltage Vrrm Max	Forward Current If(AV)	Forward Voltage VF Max	Forward Surge Current Ifsm Max	Voltage Vds Typ	Voltage Vgs Max	Voltage Vgs Rds on Measurement	Time,Recovery	Direction Type	Peak Pulse Power Dissipation	Maximum Peak Pulse Current	Maximum Clamping Voltage	Maximum Reverse Stand-off Voltage	Minimum Breakdown Voltage	Test Current	Maximum Clamping Voltage	Maximum Reverse Stand-Off Voltage	Peak Pulse Power Dissipation	ESD Protection	Maximum Reverse Leakage Current	Maximum Peak Pulse Current	Test Current	Minimum Breakdown Voltage	Clamping voltag	Stand-off V Vwm	Application	PowerDissipati	Tolerance	Breakdown-V(BR)	Voltage - Clamping (Max) @ Ipp	Voltage - Breakdown (Min)	Voltage - Reverse Standoff (Typ)	Applications	Power Line Protection	Power - Peak Pulse	Current - Peak Pulse (10/1000µs)	Clamping Voltage	Termination Style	Tradename	Leakage Current (Max)	Reverse Breakdown Voltage	Peak Pulse Current	Reverse Stand-off Voltage	Test Current (It)	Brand/Series	Current,Leakage	Current,Ratings	Current,Reverse,Maximum	ForUseWith	MountingType	SuppressorType	Termination	Voltage,Breakdown	Voltage,Clamping	Voltage,StandOff	Weight	Diode Case Style	Current Ifsm	Junction Temperature Tj Max	P(tot)	I(D)	V(DS)	Current Id Max	Pulse Current Idm	Unidirectional Channels	Channels	Operating Voltage	Breakdown Voltage	Peak Surge Current	Brand	Diode Polarity	Thread Size	CurrentSquaredTimeRating	Resistance,Thermal,JunctiontoCase	R(thJC)	LogicLevel	Q(g)	RDS(on)at10V	SVHC	Junction to Case Thermal Resistance A	Current Temperature	Full Power Rating Temperature	Lead Spacing	No. of Transistors	Capacitance,Junction	Bidirectional Channels	Maximum Diode Capacitance	Peak Reverse Voltage	Ir - Reverse Current	If - Forward Current	Vf - Forward Voltage	Pd - Power Dissipation	Maximum Drain Gate Voltage	Voltage - Breakdown (V(BR)GSS)	Current - Drain (Idss) @ Vds (Vgs=0)	Voltage - Cutoff (VGS off) @ Id	Drain Source Voltage VDS	Forward Transconductance - Min	Drain-Source Current at Vgs=0	Gate-Source Cutoff Voltage	Operating Temperature (Max)	Operating Temperature (Min)	Drain-Gate Voltage (Max)	Pin Configuration	Pin Format	Closing resistance	Recovery time	Power dissipation	Operating temperature	Housing type	Drain source voltage	安装类型	晶体管材料	类别	长度	典型输入电容值@Vds	通道模式	高度	每片芯片元件数目	最大漏源电阻值	Board Level Components	最高工作温度	通道类型	最低工作温度	最大功率耗散	最大栅源电压	宽度	尺寸	最小栅阈值电压	最大漏源电压	典型接通延迟时间	典型关断延迟时间	封装类型	最大连续漏极电流	引脚数目	晶体管配置	典型栅极电荷@Vgs	Technology	Confezione fornitore	Montaggio	Resistenza di sorgente di drain massima	Tipo di canale	Numero di elementi per chip	Modalità canale	Massima tensione di drain alla fonte	Tensione di fonte gate massima	RoHS UE	Categoria	Dissipazione massima della potenza	Nome standard sulla confezione	Temperatura d'esercizio minima	Forma conduttore	Numero dei pin	Corrente di drain continua massima	Massima temperatura d'esercizio	Reverse Recovery Time trr Max	Alternate Case Style	Current If @ Vf	External Depth	External Length / Height	External Width	Junction Temperature Tj Min	Reverse Recovery Time trr Typ	Load current	Diode type	Off state voltage max	V(RRM)	U(F)	I(F)	T(j)max	I(FSM)	R(DS on)	On-state resistance
6 1.5KE15A-E3/54 Diode TVS Single Uni-Dir 12.8V 1.5KW 2-Pin Case 1.5KE T/R vishay / semiconductor	询价	2Case 1.5KE	Single	-55 to 175 °C	Through Hole	Tape & Reel	Tape and Reel	Through Hole	1.5KE	Lead free / RoHS Compliant	2	DO-201AA	DO-201AA, DO-27, Axial	- 55 C	+ 175 C	Case 1.5KE	Zener	TVS Diodes - Transient Voltage Suppressors	1400	Axial	RoHS Compliant By Exemption	1400	1400	2	Compliant	-55	Case 1.5KE	DO-201	175	9.5(Max)	5.3 mm Dia. x 5.3 (Max) mm W x 9.5 mm L	Axial	Through Hole	Military	No	Compliant	-55C to 175C	-	-	-	-	-	1	-55 to 175	70.8A	1500W	Diodes	175°C	-55to175°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Unidirectional	1	-	-	-	-	-	-	-	-	-	-	-	-	1.5KE15A	10 weeks	RoHS-conform	1.5KE15A-E3/73	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5KE	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1 uA	5.3(Max)	-	-	-	-	-	-	-	-	-	Uni-Directional	1500 W	70.8 A	21.2 V	12.8 V	14.3 V	1 mA	21.2	12.8	1500	No	1	70.8	1	14.3	21.2V	12.8V	UNIDIRECTI	1.5kW	5%	15V	21.2V	14.3V	12.8V	Telecom	No	1500W (1.5kW)	70.8A	21.2 V	Axial	TransZorb	0.001 uA	14.3 V	70.8 A	12.8 V	1 mA	1.5KESeries	1μA	70.8A	1μA	Data/Comm,IndustrialEquipment	Thru-Hole	Voltage	Leadwires	12.8V	21.2V	15V	0.968g	-	-	-	-	-	-	-	-	1	1 Channel	12.8 V	14.3 V to 15.8 V	70.8 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 1.5KE27A-E3/54 Diode TVS Single Uni-Dir 23.1V 1.5KW 2-Pin Case 1.5KE T/R vishay / semiconductor	询价	2Case 1.5KE	Single	-55 to 175 °C	Through Hole	Tape & Reel	Tape and Reel	Through Hole	1.5KE	Lead free / RoHS Compliant	2	DO-201AA	DO-201AA, DO-27, Axial	- 55 C	+ 175 C	Case 1.5KE	Zener	TVS Diodes - Transient Voltage Suppressors	1400	Axial	RoHS Compliant By Exemption	1400	1400	2	Compliant	-55	Case 1.5KE	DO-201	175	9.5(Max)	5.3 mm Dia. x 5.3 (Max) mm W x 9.5 mm L	Axial	Through Hole	Military	No	Compliant	-55C to 175C	-	-	-	-	-	1	-55 to 175	40A	1500W	Diodes	175°C	-55to175°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Unidirectional	1	-	-	-	-	-	-	-	-	-	-	-	-	1.5KE27A	10 weeks	RoHS-conform	1.5KE27A-E3/73	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5KE	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1 uA	5.3(Max)	-	-	-	-	-	-	-	-	-	Uni-Directional	1500 W	40 A	37.5 V	23.1 V	25.7 V	1 mA	37.5	23.1	1500	No	1	40	1	25.7	37.5V	23.1V	UNIDIRECTI	1.5kW	5%	27V	37.5V	25.7V	23.1V	Telecom	No	1500W (1.5kW)	40A	37.5 V	Axial	TransZorb	0.001 uA	25.7 V	40 A	23.1 V	1 mA	1.5KESeries	1μA	40A	1μA	Data/Comm,IndustrialEquipment	Thru-Hole	Voltage	Leadwires	23.1V	37.5V	27V	0.968g	-	-	-	-	-	-	-	-	1	1 Channel	23.1 V	25.7 V to 28.4 V	40 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 1.5KE7.5CA-E3/54 Diode TVS Single Bi-Dir 6.4V 1.5KW 2-Pin Case 1.5KE T/R vishay / semiconductor	询价	2Case 1.5KE	Single	-55 to 175 °C	Through Hole	Tape & Reel	Tape and Reel	Through Hole	1.5KE	Lead free / RoHS Compliant	2	DO-201AA, DO-27, Axial	DO-201AA, DO-27, Axial	-	-	Case 1.5KE	Zener	-	-	-	-	1400	1400	2	Compliant	-55	Case 1.5KE	DO-201	175	9.5(Max)	9.5x5.3Dia.mm	Axial	Through Hole	Military	No	Compliant	-55C to 175C	-	-	-	-	-	1	-55 to 175	133A	1500W	Diodes	175°C	-55to175°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bi-Directional	1	-	-	-	-	-	-	-	-	-	-	-	-	1.5KE7V5CA	10 weeks	RoHS-conform	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1000 uA	5.3(Max)	-	-	-	-	-	-	-	-	-	Bi-Directional	1500 W	133 A	11.3 V	6.4 V	7.13 V	10 mA	11.3	6.4	1500	No	1000	133	10	7.13	11.3V	6.4V	BIDIRECTIO	1.5kW	5%	7.5V	11.3V	7.13V	6.4V	Telecom	No	1500W (1.5kW)	133A	11.3 V	-	-	1 uA	7.13 V	133 A	6.4 V	10 mA	1.5KESeries	500μA	133A	500μA	Data/Comm,IndustrialEquipment	Thru-Hole	Voltage	Leadwires	6.4V	11.3V	7.5V	0.968g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 1N4148TR Diode Small Signal Switching 100V 0.3A 2-Pin DO-35 T/R vishay / semiconductor	询价	2DO-35	Single	-65 to 175 °C	Through Hole	Tape & Reel	Tape and Reel	Through Hole	DO-35	Lead free / RoHS Compliant	2	DO-35	DO-204AH, DO-35, Axial	- 65 C	+ 175 C	-	Small Signal Switching Diode	Diodes - General Purpose, Power, Switching	50000	Through Hole	RoHS Compliant By Exemption	10000	50000	2	Compliant	-65	DO-35	DO-204-AH	175	3.9(Max)	-	-	Through Hole	-	-	-	-	1.75 mm	3.4 mm	1.75 mm	1N4148VSTR	-	-	175	-	-	-	-	-	100 V	0.3 A	5@75V uA	1@0.01A V	2 A	25nA @ 20V	1V @ 10mA	75V	350°C/W Ja	-65°C ~ 150°C	300mA (DC)	Fast Recovery = 200mA (Io)	Standard	-	-	-	-	1 V	Switching Diodes	0.3 A	2 A	-	-	-	-	-	-	-	-	-	-	-	-	500	500 mW	- 65 C to + 175 C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8 ns	5@75V	2	1@0.01A	100	8	0.3	8ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4pF @ 0V, 1MHz	8 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	5 uA	1.7(Max)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 pF	100 V	5 uA	0.3 A	1 V	500 mW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N4416A Trans JFET N-CH 4-Pin TO-206AF vishay / siliconix	询价	4TO-206AF	Single	-55 to 150 °C	Through Hole	Bulk	Bulk	Through Hole	TO-206AF (TO-72)	Contains lead / RoHS non-compliant	4	TO-206AF, TO-72-4 Metal Can	-	-	-	TO-206AF	-	JFET	200	Through Hole	No RoHS Version Available	0	1	-	Not Compliant	-55	TO-206AF	TO-206AF	150	-	-	-	-	Military	No	Not Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-35 V	N-Channel	300mW	4pF @ 15V	-	-	-	-	-	-	-	-	300	-	-	N	N-Channel	- 35 V	150 Ohms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-35	-35 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-35	35V	5mA @ 15V	2.5V @ 1nA	35 V	0.0045 S	5 mA	- 6 V	150C	-55C	-35 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 VS-16F120 Diode Switching 1.2KV 16A 2-Pin DO-4 vishay / semiconductor	询价	2DO-4	Single	-65 to 175 °C	Stud	Bulk	Bulk	Chassis, Stud Mount	DO-203AA	Lead free / RoHS Compliant	2	DO-4	DO-203AA, DO-4, Stud	-65 °C	+175 °C	DO-4	Switching Diode	Rectifiers	100	Through Hole	RoHS Compliant By Exemption	100	100	-	-	-	-	-	-	-	31.8 x 12.69 x 11mm	DO-203AA(DO-4)	-	-	-	-	-	11mm	12.69mm	31.8mm	-	-	-	-	370A	-	Rectifier	+175°C	-65to+175°C	1200 V	16 A	12000 uA	1.23@50A V	370 A	12mA @ 1200V	1.23V @ 50A	1200V (1.2kV)	0.5°C/W Cs	-65°C ~ 175°C	16A	Standard Recovery >500ns, > 200mA (Io)	Standard	0.008	85411000	-	-	1.23 V at 50 A	Standard Recovery Rectifiers	16 A	370 A	-	-	-	-	:-65°C	:175°C	:2	-	-	-	-	-	-	-	:-65°C to +175°C	-	-	-	-	Switching	1200 V	12000 uA	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	16A	0.37kA	:Screw	16A	12mA	Standard	1.23V	1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Single	:1.2kV	:16A	:1.23V	:350A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:DO-4	:310A	:175°C	-	-	-	-	-	-	-	-	-	-	-	:Stud Cathode	:10-32UNF	612A2s	1.6K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 VS-1N2138A STD RECOVERY RECTFR 600V 60A 2PIN DO-5 vishay / semiconductor	询价	2DO-5	Single	-65 to 190 °C	Stud	100	Bulk	Chassis, Stud Mount	DO-203AB	Lead free / RoHS Compliant	-	DO-203AB	DO-203AB, DO-5, Stud	- 65 C	+ 190 C	-	Switching Diode	Rectifiers	100	Stud	RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600 V	60 A	10000 uA	1.3@188A V	900 A	10mA @ 600V	1.3V @ 188A	600V	0.25°C/W Cs	-65°C ~ 200°C	60A	Standard Recovery >500ns, > 200mA (Io)	Standard	0.018	85411000	-	-	1.3 V at 188 A	Standard Recovery Rectifiers	60 A	900 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600 V	10000 uA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Single	:600V	:60A	:1.3V	:900A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 VS-70HF120 Diode Switching 1.2KV 70A 2-Pin DO-5 vishay / semiconductor	询价	2DO-5	Single	-65 to 180 °C	Stud	Bulk	Bulk	Chassis, Stud Mount	DO-203AB	Lead free / RoHS Compliant	2	DO-5	DO-203AB, DO-5, Stud	-65 °C	+180 °C	DO-5	Switching Diode	Rectifiers	100	Stud	RoHS Compliant	100	100	-	-	-	-	-	-	-	22.9 x 20.02 x 17.35mm	DO-203AB(DO-5)	-	-	-	-	-	17.35mm	20.02mm	22.9mm	-	-	-	-	1250A	-	Rectifier	+180°C	-65to+180°C	1200 V	70 A	9000 uA	1.35@220A V	1250 A	9mA @ 1200V	1.35V @ 220A	1200V (1.2kV)	0.25°C/W Cs	-65°C ~ 150°C	70A	Standard Recovery >500ns, > 200mA (Io)	Standard	0.022	85411000	-	-	1.35 V at 220 A	Standard Recovery Rectifiers	70 A	1250 A	-	-	-	-	:-65°C	:180°C	:2	0.35 W	-	-	-	-	-	-	:-65°C to +180°C	-	-	-	-	Switching	1200 V	9000 uA	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	70A	1.25kA	:Screw	70A	9mA	Standard	1.35V	1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Single	:1.2kV	:70A	:1.35V	:1.2kA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:DO-5	:1.05kA	:180°C	-	-	-	-	-	-	-	-	-	-	-	:Stud Cathode	:1/4"-28UNF	6450A2s	0.45K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
10 IRF540PBF Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB vishay / semiconductor	询价	3TO-220AB	Single	-55 to 175 °C	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	Lead free / RoHS Compliant	3	-	TO-220-3	-55 °C	+175 °C	TO-220AB	Power MOSFET	-	-	-	-	50	1000	3	Compliant	-55	TO-220AB	TO-220	175	10.51(Max)	10.41 x 4.7 x 9.01mm	TO-220AB	Through Hole	Military	No	Compliant	-55C to 175C	4.7mm	10.41mm	9.01mm	*IRF540PBF	4.7(Max)	1	-	-	150W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	1	-	-	-	-	±20 V	MOSFET N-Channel, Metal Oxide	150W	1700pF @ 25V	-	-	-	150 W	IRF540PBF	14 weeks	RoHS-conform	-	150000	150 W	-	N	-	-	-	-	-	-	-	Enhancement	100 V	28 A	77@10V mOhm	11 ns	44 ns	53 ns	43 ns	Standard	28A (Tc)	4V @ 250µA	77 mOhm @ 17A, 10V	100V	72nC @ 10V	28 A	TO220AB	1	2.67 g	50	50	NO	-	-	-	-	-	-	-	-	±20	�20 V	-	-	-	-	-	-	-	-	9.01(Max)	Power MOSFET	0.077 Ω	72 nC V @ 10	1700 pF V @ 25	28A	72nC	N-Channel	0.077Ohm	+175°C	-55°C	53ns	11ns	8.7S	100V	2.5V	±20V	N-MOSFET	100V	unipolar	28A	-	-	-	-	-	-	100	77@10V	28	Tab	28 A	Not Required MHz	Not Required W	Not Required dB	0.077 ohm	Not Required %	100 V	Not Required dB	150W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150W	28A	100V	-	-	-	-	-	-	-	-	-	-	-	-	1K/W	NO	72nC	0.077Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
11 IRF640PBF Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB vishay / semiconductor	询价	3TO-220AB	Single	-55 to 150 °C	Through Hole	Rail / Tube	Bulk	Through Hole	TO-220AB	Lead free / RoHS Compliant	3	TO-220-3	TO-220-3	-55 °C	+150 °C	TO-220AB	Power MOSFET	MOSFET	1000	Through Hole	RoHS Compliant By Exemption	50	1000	3	Compliant	-55	TO-220AB	TO-220	150	10.41(Max)	10.41 x 4.7 x 9.01mm	TO-220AB	Through Hole	Military	No	Compliant	-55C to 150C	4.7mm	10.41mm	9.01mm	*IRF640PBF	4.7(Max)	1	-	-	125W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.002	85412900	N	1	-	-	-	-	±20 V	MOSFET N-Channel, Metal Oxide	125W	1300pF @ 25V	:-55°C	:150°C	:3	125 W	IRF640PBF	14 weeks	RoHS-conform	-	125000	125 W	-	N	N-Channel	+/- 20 V	180 mOhms	-	-	-	:-	Enhancement	200 V	18 A	180@10V mOhm	14 ns	51 ns	45 ns	36 ns	Standard	18A (Tc)	4V @ 250µA	180 mOhm @ 11A, 10V	200V	70nC @ 10V	18 A	TO220AB	1	2.71 g	300	300	NO	-	-	-	-	-	-	-	-	±20	�20 V	-	-	:Through Hole	-	-	-	-	-	9.01(Max)	Power MOSFET	0.18 Ω	70 nC V @ 10	1300 pF V @ 25	18A	70nC	N-Channel	0.18Ohm	+150°C	-55°C	45ns	14ns	6.7S	200V	2V	±20V	N-MOSFET	200V	unipolar	18A	51 ns	200 V	36 ns	-	-	-	200	180@10V	18	Tab	18 A	Not Required MHz	Not Required W	Not Required dB	0.18 ohm	Not Required %	200 V	Not Required dB	125W	:18A	:200V	:180mohm	:10V	:4V	:125W	:TO-220AB	-	-	-	-	-	-	-	-	-	-	-	-	-	:200V	:20V	:10V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	125W	18A	200V	:18A	:72A	-	-	-	-	-	-	-	-	-	-	1K/W	NO	70nC	0.18Ohm	:No SVHC (19-Dec-2012)	:1°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
12 IRF9520PBF Trans MOSFET P-CH 100V 6.8A 3-Pin(3+Tab) TO-220AB vishay / semiconductor	询价	3TO-220AB	Single	-55 to 175 °C	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	Lead free / RoHS Compliant	3	TO-220-3	-	-55 °C	+175 °C	TO-220AB	Power MOSFET	MOSFET	1000	Through Hole	RoHS Compliant By Exemption	50	1000	3	Compliant	-55	TO-220AB	TO-220	175	10.41(Max)	10.41 x 4.7 x 9.01mm	TO-220AB	Through Hole	Military	No	Compliant	-55C to 175C	4.7mm	10.41mm	9.01mm	*IRF9520PBF	4.7(Max)	1	-	-	60W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.002	85412900	P	1	-	-	-	-	±20 V	MOSFET P-Channel, Metal Oxide	60W	390pF @ 25V	:-55°C	:175°C	:3	60 W	-	-	-	-	60000	60 W	:-55°C to +175°C	P	P-Channel	+/- 20 V	600 mOhms	-	-	-	:-	Enhancement	100 V	6.8 A	600@10V mOhm	9.6 ns	29 ns	21 ns	25 ns	Standard	6.8A (Tc)	4V @ 250µA	600 mOhm @ 4.1A, 10V	100V	18nC @ 10V	6.8 A	TO220AB	1	2.72 g	350	350	-	-	-	-	-	-	-	-	-	±20	�20 V	-	-	-	-	-	-	-	-	9.01(Max)	Power MOSFET	0.6 Ω	18 nC V @ 10	390 pF V @ 25	-6.8A	18nC	P-Channel	0.6Ohm	+175°C	-55°C	21ns	9.6ns	2S	-100V	-6.3V	±20V	P-MOSFET	-100V	unipolar	-6.8A	29 ns	- 100 V	25 ns	-	-	-	100	600@10V	6.8	Tab	6.8 A	Not Required MHz	Not Required W	Not Required dB	0.6 ohm	Not Required %	100 V	Not Required dB	60W	:6A	:100V	:600mohm	:-10V	:-4V	:40W	:TO-220AB	-	-	-	-	-	-	-	-	-	-	-	-	-	:-100V	:20V	:-10V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:-6.8A	:24A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:No SVHC (19-Dec-2012)	-	:25°C	:25°C	:2.54mm	:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:a	:1 g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
9 IRFBC40PBF Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB vishay / semiconductor	询价	3TO-220AB	Single	-55 to 150 °C	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	Lead free / RoHS Compliant	3	TO-220AB	TO-220-3	-55 °C	+150 °C	TO-220AB	Power MOSFET	MOSFET	1000	Through Hole	RoHS Compliant By Exemption	-	-	3	Compliant	-55	TO-220AB	TO-220	150	10.51(Max)	10.41 x 4.7 x 9.01mm	TO-220AB	Through Hole	Military	No	Compliant	-55C to 150C	4.7mm	10.41mm	9.01mm	*IRFBC40PBF	4.65(Max)	1	-	-	125W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	1	-	-	-	-	±20 V	MOSFET N-Channel, Metal Oxide	125W	1300pF @ 25V	-	-	-	125 W	-	-	-	-	125000	125 W	-	N	N-Channel	+/- 20 V	1.2 Ohms	-	-	-	-	Enhancement	600 V	6.2 A	1200@10V mOhm	13 ns	18 ns	55 ns	20 ns	Standard	6.2A (Tc)	4V @ 250µA	1.2 Ohm @ 3.7A, 10V	600V	60nC @ 10V	6.2 A	TO220AB	1	2.71 g	200	200	-	-	-	-	-	-	-	-	-	±20	�20 V	-	-	-	-	-	-	-	-	9.01(Max)	Power MOSFET	1.2 Ω	60 nC V @ 10	1300 pF V @ 25	6.2A	60nC	N-Channel	1.2Ohms	+150°C	-55°C	55ns	13ns	4.7S	600V	1.5V	±20V	N-MOSFET	600V	unipolar	6.2A	18 ns	600 V	20 ns	-	-	-	600	1200@10V	6.2	Tab	6.2 A	Not Required MHz	Not Required W	Not Required dB	1.2 ohm	Not Required %	600 V	Not Required dB	96W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.2 Ohm	940 ns	125	-55...150 °C	TO-220	600 V	通孔	Si	功率 MOSFET	10.41mm	1300 pF@ 25 V	增强	9.01mm	1	1.2 Ω	Y	+150 °C	N	-55 °C	125 W	±20 V	4.7mm	10.41 x 4.7 x 9.01mm	2V	600 V	13 ns	55 ns	TO-220AB	6.2 A	3	单	60 nC @ 10 V	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRFL210TRPBF Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R vishay / semiconductor	询价	4SOT-223	Single Dual Drain	-55 to 150 °C	Surface Mount	Tape & Reel	Tape & Reel (TR)	Surface Mount	SOT-223	Lead free / RoHS Compliant	3 +Tab	SOT-223	TO-261-4, TO-261AA	- 55 C	+ 150 C	SOT-223	Power MOSFET	MOSFET	2500	SMD/SMT	RoHS Compliant By Exemption	2500	2500	-	-	-	-	-	-	-	-	-	-	Military	No	Compliant	-55C to 150C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.0005	85412900	N	1	-	-	-	-	±20 V	MOSFET N-Channel, Metal Oxide	2W	140pF @ 25V	:-55°C	:150°C	:4	2 W	-	-	-	-	-	-	-	-	N-Channel	+/- 20 V	1.5 Ohms	-	-	-	:MSL 1 - Unlimited	Enhancement	200 V	0.96 A	1500@10V mOhm	8.2 ns	17 ns	14 ns	8.9 ns	Standard	960mA	4V @ 250µA	1.5 Ohm @ 580mA, 10V	200V	8.2nC @ 10V	0.96 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	�20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	17 ns	200 V	8.9 ns	-	-	-	-	-	-	-	0.96 A	Not Required MHz	Not Required W	Not Required dB	1.5 ohm	Not Required %	200 V	Not Required dB	-	:960mA	:200V	:1.5ohm	:10V	:4V	:3.1W	:SOT-223	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
10 IRFP460PBF Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC vishay / semiconductor	询价	3TO-247AC	Single	-55 to 150 °C	Through Hole	Rail / Tube	Tube	Through Hole	TO-247-3	Lead free / RoHS Compliant	3	TO-247AC	TO-247-3	-55 °C	+150 °C	TO-247AC	-	MOSFET	500	Through Hole	RoHS Compliant By Exemption	25	500	3	-	-	-	-	-	15.87(Max)	15.87 x 5.31 x 20.7mm	TO-247AC	-	-	-	-	-	5.31mm	15.87mm	20.7mm	*IRFP460PBF	5.31(Max)	1	-	-	280W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.006	85412900	-	-	-	-	-	-	±20 V	MOSFET N-Channel, Metal Oxide	280W	4200pF @ 25V	:-55°C	:150°C	:3	280 W	-	-	-	-	-	280 W	:-55°C to +150°C	N	N-Channel	+/- 20 V	270 mOhms	-	-	-	:-	Enhancement	500 V	20 A	270@10V mOhm	18 ns	59 ns	110 ns	58 ns	Standard	20A (Tc)	4V @ 250µA	270 mOhm @ 12A, 10V	500V	210nC @ 10V	20 A	TO247AC	1	6.51 g	500	500	-	-	-	-	-	-	-	-	-	-	-	-	-	:Through Hole	-	-	-	-	-	20.7(Max)	Power MOSFET	0.27 Ω	210 nC V @ 10	4200 pF V @ 25	20A	210nC	N-Channel	0.27Ohm	+150°C	-55°C	110ns	18ns	13S	500V	1.8V	±20V	N-MOSFET	500V	unipolar	20A	59 ns	500 V	58 ns	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	280W	:20A	:500V	:270mohm	:10V	:4V	:280W	:TO-247AC	-	-	-	-	-	-	-	-	-	-	-	-	-	:500V	:20V	:10V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:80A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:0.45°C/W	:25°C	:25°C	:5.45mm	:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-247AC	Through Hole	270@10V	N	1	Enhancement	500	±20	Compliant	Power MOSFET	280000	TO-247	-55	Through Hole	3	20	150	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 MURS120-E3/52T Diode Switching 200V 2A 2-Pin SMB T/R vishay / semiconductor	询价	2SMB	Single	-65 to 175 °C	Surface Mount	Tape & Reel	Tape and Reel	Surface Mount	DO-214AA (SMB)	Lead free / RoHS Compliant	2	SMB	DO-214AA, SMB	- 65 C	+ 175 C	SMB	Switching Diode	Rectifiers	750	SMD/SMT	RoHS Compliant By Exemption	750	3000	2	Compliant	-65	SMB	DO-214-AA	175	4.7(Max)	-	DO-214AA(SMB)	J-Lead	Military	No	Compliant	-65C to 175C	-	-	-	MURS120-E3/52TGICT	3.8(Max)	-	-65 to 175	40A	-	Rectifier	+175°C	-65to+175°C	200 V	2 A	2 uA	0.875@1A V	40 A	2µA @ 200V	875mV @ 1A	200V	13°C/W Jl	-65°C ~ 175°C	2A	Fast Recovery = 200mA (Io)	Standard	-	-	-	-	0.875 V at 1 A	Ultra Fast Recovery Rectifiers	2 A	40 A	-	-	-	-	-	-	-	-	-	-	-	MURS120-E3/5BT	-	-	-	-	-	-	-	Switching Diode	200 V	2 uA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	35 ns	2	40	0.875@1A	200	35	2	35ns	-	-	-	-	-	1A	50μA	Ultrafast	0.71V	200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	35 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40	200	2	35	0.875	2	-	-	-	-	-	-	-	-	-	-	25ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
10 MURS160-E3/52T Diode Switching 600V 2A 2-Pin SMB T/R vishay / semiconductor	询价	2SMB	Single	-65 to 175 °C	Surface Mount	Cut Tape	Tape and Reel	Surface Mount	DO-214AA (SMB)	Lead free / RoHS Compliant	2	DO-214AA, SMB	DO-214AA, SMB	-65 °C	+175 °C	SMB	Switching Diode	-	-	-	-	750	3000	2	Compliant	-65	SMB	DO-214-AA	175	4.7(Max)	2.24 x 4.57 x 3.94mm	DO-214AA(SMB)	J-Lead	Military	No	Compliant	-65C to 175C	3.94mm	4.57mm	2.24mm	MURS160-E3/52TGICT	3.8(Max)	-	-65 to 175	35A	-	Rectifier	+175°C	-65to+175°C	600 V	2 A	5 uA	1.25@1A V	35 A	5µA @ 600V	1.25V @ 1A	600V	13°C/W Ja	-65°C ~ 175°C	2A	Fast Recovery = 200mA (Io)	Standard	0.000096	85411000	-	-	-	-	-	-	-	-	-	-	:-65°C	:175°C	:2	-	-	-	-	-	-	-	:-65°C to +175°C	-	-	-	-	Switching	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SMB	1	0.22 g	750	750	-	75 ns	5	35	1.25@1A	600	75	2	75ns	-	-	2A	0.035kA	:SMD	1A	150μA	Ultrafast	1.05V	600V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10pF @ 4V, 1MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	35	600	5	75	1.25	2	-	-	:Single	:600V	:1A	:1.25V	:35A	-	-	-	50ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:DO-214AA	:35A	:175°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:50ns	:DO-214AA	:1A	:4mm	:3mm	:5mm	:-65°C	:50ns	1A	rectifying	600V	-	-	-	-	-	-	-
7 S1A-E3/61T Diode Switching 50V 1A 2-Pin SMA T/R vishay / semiconductor	询价	2SMA	Single	-55 to 150 °C	Surface Mount	Tape & Reel	Tape and Reel	Surface Mount	DO-214AC (SMA)	Lead free / RoHS Compliant	2	SMA	DO-214AC, SMA	-55 °C	+150 °C	DO-214AC	Switching Diode	Rectifiers	1800	SMD/SMT	RoHS Compliant By Exemption	-	-	2	Compliant	-55	SMA	DO-214-AC	150	4.6(Max)	4.5 x 2.79 x 2.29mm	-	J-Lead	Military	No	Compliant	-55C to 150C	2.79mm	4.5mm	2.29mm	S1A-E3/61TGICT	2.9(Max)	-	-55 to 150	-	-	-	-	-	50 V	1 A	1 uA	1.1 V	40 A	1µA @ 50V	1.1V @ 1A	50V	27°C/W Jl	-55°C ~ 150°C	1A	Standard Recovery >500ns, > 200mA (Io)	Standard	-	-	-	-	1.1 V	Standard Recovery Rectifiers	1 A	40 A	-	-	-	-	-	-	-	-	-	-	-	S1A-E3/5AT	-	-	-	-	-	-	-	General Purpose	50 V	1 uA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1800(Typ) ns	1	40	1.1	50	1800(Typ)	1	1.8µs	-	-	1A	0.04kA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	S1x	12pF @ 4V, 1MHz	1800 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40	50	1	1800	1.1	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 S1G-E3/61T Diode Switching 400V 1A 2-Pin SMA T/R vishay / semiconductor	询价	2SMA	Single	-55 to 150 °C	Surface Mount	Cut Tape	Tape and Reel	Surface Mount	DO-214AC (SMA)	Lead free / RoHS Compliant	2	SMA	DO-214AC, SMA	-55 °C	+150 °C	DO-214AC	Switching Diode	Rectifiers	1800	SMD/SMT	RoHS Compliant By Exemption	-	-	2	Compliant	-55	SMA	DO-214-AC	150	4.6(Max)	4.5 x 2.79 x 2.29mm	DO-214AC(SMA)	J-Lead	Military	No	Compliant	-55C to 150C	2.79mm	4.5mm	2.29mm	S1G-E3/61TGICT	2.9(Max)	-	-55 to 150	40A	-	Rectifier	+150°C	-55to+150°C	400 V	1 A	1 uA	1.1 V	40 A	1µA @ 400V	1.1V @ 1A	400V	27°C/W Jl	-55°C ~ 150°C	1A	Standard Recovery >500ns, > 200mA (Io)	Standard	-	-	-	-	1.1 V	Standard Recovery Rectifiers	1 A	40 A	-	-	-	-	-	-	-	-	-	-	-	S1G-E3/5AT	-	-	-	-	-	-	-	General Purpose	400 V	1 uA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1800(Typ) ns	1	40	1.1	400	1800(Typ)	1	1.8µs	-	-	1A	0.04kA	-	1A	50μA	Standard	1.1V	400V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	S1x	12pF @ 4V, 1MHz	1800 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40	400	1	1800	1.1	1	-	-	-	-	-	-	-	-	-	-	1.8μs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	12pF	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 S1J-E3/61T Diode Switching 600V 1A 2-Pin SMA T/R vishay / semiconductor	询价	2SMA	Single	-55 to 150 °C	Surface Mount	Tape & Reel	Tape and Reel	Surface Mount	DO-214AC (SMA)	Lead free / RoHS Compliant	2	SMA	DO-214AC, SMA	-55 °C	+150 °C	DO-214AC	Switching Diode	Rectifiers	1800	SMD/SMT	RoHS Compliant By Exemption	1800	1800	2	Compliant	-55	SMA	DO-214-AC	150	4.6(Max)	4.5 x 2.79 x 2.29mm	DO-214AC(SMA)	J-Lead	Military	No	Compliant	-55C to 150C	2.79mm	4.5mm	2.29mm	S1J-E3/61TGICT	2.9(Max)	-	-55 to 150	40A	-	Rectifier	+150°C	-55to+150°C	600 V	1 A	1 uA	1.1 V	40 A	1µA @ 600V	1.1V @ 1A	600V	27°C/W Jl	-55°C ~ 150°C	1A	Standard Recovery >500ns, > 200mA (Io)	Standard	-	-	-	-	1.1 V	Standard Recovery Rectifiers	1 A	40 A	-	-	-	-	-	-	-	-	S1J	19 weeks	RoHS-conform	S1J-E3/5AT	-	-	-	-	-	-	-	General Purpose	600 V	1 uA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	1800(Typ) ns	1	40	1.1	600	1800(Typ)	1	1.8µs	-	-	1A	0.04kA	-	1A	50μA	Standard	1.1V	600V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	S1x	12pF @ 4V, 1MHz	1800 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40	600	1	1800	1.1	1	-	-	-	-	-	-	-	-	-	-	1.8μs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	12pF	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600V	1.1V	1A	150°C	40A	-	-
9 SI2323DS-T1-E3 Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R vishay / siliconix	询价	3SOT-23	Single	-55 to 150 °C	Surface Mount	Cut Tape	Tape and Reel	Surface Mount	SOT-23-3 (TO-236)	Lead free / RoHS Compliant	3	SOT-23-3	TO-236-3, SC-59, SOT-23-3	-55 °C	+150 °C	SOT-23, TO-236	-	MOSFET	3000	SMD/SMT	RoHS Compliant	3000	3000	3	Compliant	-55	SOT-23	SOT-23	150	3.04(Max)	3.04 x 1.4 x 1.02mm	TO-236(SOT-23)	Gull-wing	-	-	-	-	1.4mm	3.04mm	1.02mm	SI2323DS-T1-E3CT	1.4(Max)	1	-	-	0.75W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0	85412100	-	-	-	-	-	-	±8 V	MOSFET P-Channel, Metal Oxide	750mW	1020pF @ 10V	:-55°C	:150°C	:3	750 mW	SI2323DS	42 weeks	RoHS-conform	SI2323DS-E3	750	0.75 W	:-55°C to +150°C	P	P-Channel	+/- 8 V	39 mOhms	-	-	-	:MSL 1 - Unlimited	Enhancement	20 V	3.7 A	39@4.5V mOhm	25 ns	43 ns	71 ns	48 ns	Logic Level Gate	3.7A (Ta)	1V @ 250µA	39 mOhm @ 4.7A, 4.5V	20V	19nC @ 4.5V	3.7 A	SOT23	1	0.03 g	3000	3000	-	-	-	-	-	-	-	-	-	±8	-	-	-	:SMD	-	-	-	-	-	1.02(Max)	Power MOSFET	0.039 Ω	12.5 nC V @ 4.5	1020 pF V @ 10	-3.7A	12.5nC	P-Channel	0.031Ohm	+150°C	-55°C	71ns	25ns	16S	-20V	0.75V	±8V	P-MOSFET	-20V	P-CHANNEL	-4.7A	43 ns	20 V	43 ns	-	-	-	20	39@4.5V	3.7	-	-	-	-	-	-	-	-	-	-	:-4.7A	:-20V	:39mohm	:-4.5V	:-1V	:1.25W	:SOT-23	-	-	-	-	-	-	-	-	-	-	-	-	-	:-20V	:-1V	:-4.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TrenchFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.75W	4.7A	20V	:-4.7A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.039Ohm	0.039Ω

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Vishay Intertechnology, Inc.- 场效应晶体管（FET）

场效应晶体管（FET） - 型号列表共 16,501 个型号

Package / Case

Other Names

Package

Supplier Device Package

Unit Pack

Package/Case

Factory Pack Quantity

Package Type

MOQ

Dimensions

Current - Reverse Leakage @ Vr

Package Length

PackageType

Width

Length

Height

Weight (kg)

Supplier Package

Standard Package Name

Matchcode

Part # Aliases

Peak Reverse Current

Peak Forward Voltage

Voltage - Forward (Vf) (Max) @ If

Power - Max

Input Capacitance (Ciss) @ Vds

Rds On

Power Dissipation

Maximum Continuous Drain Current

RDS-on

Typical Turn-On Delay Time

Typical Rise Time

Typical Turn-Off Delay Time

Typical Fall Time

Current - Continuous Drain (Id) @ 25° C

Rds On (Max) @ Id, Vgs

Gate Charge (Qg) @ Vgs

Continuous Drain Current

Collective package [pcs]

spg

Maximum Operating Temperature

Current,Surge

PowerDissipation

Peak Reverse Repetitive Voltage

Peak Average Forward Current

Peak Non-Repetitive Surge Current

Maximum Power Dissipation

Voltage - DC Reverse (Vr) (Max)

Thermal Resistance

Current - Average Rectified (Io)

Forward Voltage Drop

Maximum Power Dissipation

Forward Continuous Current

Package Width

Maximum Drain Source Resistance

Typical Gate Charge @ Vgs

Current,Drain

GateCharge,Total

Resistance,DraintoSourceOn

Time,Turn-OffDelay

Time,Turn-OnDelay

Transconductance,Forward

Voltage,Breakdown,DraintoSource

Voltage,Forward,Diode

Drain-source voltage

Drain current

Gross weight

Rise Time

Fall Time

Operating Temperature

Standard Package

Product Category

Peak Reverse Repetitive Voltage

Operating Temperature Range

Max Surge Current

Reverse Voltage

Reverse Current IR

Voltage,Forward