STMicroelectronics N.V.- 射频半导体器件

意法半导体公司（STMicroelectronics N.V.）成立于1987年，由意大利SGS微电子公司和法国汤姆逊半导体公司合并而成。公司总部位于瑞士日内瓦，并于1994年上市，在纽约证券交易所、泛欧巴黎证券交易所和米兰证券交易所挂牌交易。ST是全球最大的半导体公司之一，业务涵盖汽车、工业、个人电子和通信基础设施等领域。公司提供极为广泛的产品组合，核心产品包括微控制器（MCU）、模拟芯片、功率器件和传感器等。在MCU领域，STM32系列是业界最知名的32位微控制器，广泛应用于嵌入式系统。模拟产品方面，ST提供运算放大器、比较器和数据转换器，电源管理芯片包括各类电压调节器和电机驱动器。在功率器件上，ST拥有MOSFET、IGBT和碳化硅（SiC）等先进产品，支持高效能电源转换。传感器产品线包括MEMS加速度计、陀螺仪、环境传感器以及飞行时间（ToF）测距传感器。ST技术实力雄厚，拥有强大的研发和制造能力，在全球半导体市场中占据重要地位。根据营收排名，ST常年位列全球半导体前十，并在汽车IC、MEMS传感器和通用MCU等领域保持市场领先。

MODELS

射频半导体器件 - 型号列表共 282 个型号

制造商零件编号	价格/库存	Package	Type	Operating Temperature	Mounting	Standard Package	Supplier Device Package	Packaging	Package / Case	rohs	Maximum Operating Temperature	Minimum Operating Temperature	Factory Pack Quantity	Product Category	Mounting Style	RoHS	Configuration	Pin Count	Supplier Package	EU RoHS	Maximum Operating Temperature	Maximum Power Dissipation	Minimum Operating Temperature	Transistor Type	Transistor Polarity	Power Dissipation	Number of Elements per Chip	Gain	Frequency	Output Power	Unit Pack	MOQ	Height	Length	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	Maximum Gate Source Voltage	Voltage - Rated	Voltage - Test	Current - Test	Current Rating	Power - Output	Gate-Source Breakdown Voltage	Continuous Drain Current	Output Power	Drain-Source Breakdown Voltage	Channel Type	Brand	Series	Pd - Power Dissipation	Technology	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Operating Frequency	Maximum Frequency	Typical Drain Efficiency	Typical Power Gain	Maximum Drain Source Voltage	Typical Input Capacitance @ Vds	Maximum Continuous Drain Current	Vgs - Gate-Source Voltage	Lead Shape	PCB	Operating Temp Range	Rad Hardened	Standard Package Name	Package Length	Power Dissipation (Max)	Package Height	Frequency (Max)	Number of Elements	Product Type	Screening Level	Input Capacitance (Typ)@Vds	Output Capacitance (Typ)@Vds	Power Gain (Typ)@Vds	Drain Efficiency (Typ)	Reverse Capacitance (Typ)	Output Power (Max)	Drain Source Voltage (Max)	Package Width	Package Type	VSWR (Max)	增益	晶体管类型	Other Names	Mounting Type	DELETED	Forward Transconductance - Min	电流 - 测试	电压 - 额定	电压 - 测试	额定电流	频率	功率 - 输出	Maximum Power Dissipation	Operating Temperature Classification	Tab	Maximum Collector Emitter Voltage	Maximum DC Collector Current	Minimum DC Current Gain	Maximum Collector Base Voltage	Maximum DC Collector Current	Maximum Collector Base Voltage	Maximum Collector Emitter Voltage	Maximum Emitter Base Voltage	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Emitter- Base Voltage VEBO	DC Collector/Base Gain hfe Min	Collector- Emitter Voltage VCEO Max	Continuous Collector Current	Polarity	Forward Transconductance (Typ)	Package Diameter	Dimensions	Width	No. of Pins	SVHC	Power Dissipation Ptot Max	Weight (kg)	Tariff No.	PackageType	PowerDissipation	PrimaryType	Case	Multiplicity	Gross weight	Collective package [pcs]	spg	DC Current Gain hFE Max	Collector- Base Voltage VCBO	Drain Current (Max)	Gate-Source Voltage (Max)	Drain Efficiency	Drain-Source On-Volt	Power Gain	封装/外壳	Peak Reverse Repetitive Voltage	Peak Average Forward Current	Peak Reverse Current	Peak Forward Voltage	Maximum Continuous Forward Current	Peak Reverse Repetitive Voltage	Peak Reverse Current	Operating Junction Temperature	Peak Forward Voltage	Matchcode	U(F)	Standard Leadtime	I(F)	T(j) max	U(RRM)	t(rr)	Leadfree Defin.	Current - Max	Capacitance @ Vr, F	Voltage - Peak Reverse (Max)	Diode Type	Maximum Continuous Forward Current	Product	Forward Continuous Current	Maximum Reverse Leakage Current	Operating Temperature Range	Forward Voltage Drop	Peak Reverse Voltage	Peak Rep Rev Volt	Rev Curr	Forward Voltage	Avg. Forward Curr (Max)	Repetitive Reverse Voltage Vrrm Max	Diode Case Style	Forward Current If(AV)	Alternate Case Style	Breakdown Voltage Vbr	Capacitance Ct	Diode Configuration	External Diameter	External Length / Height	Forward Current If Max	Forward Voltage VF Max	Reverse Voltage Vr	Thermal Capacitance Ct	Reel Quantity	Termination Type	Capacitance,Junction	Current,Forward	Current,Reverse	Speed,Switching	Temperature,Junction,Maximum	Temperature,Operating	ThermalResistance,JunctiontoAmbient	Voltage,Forward	Voltage,Reverse	Forward voltage at If	Load current	Off state voltage max	Load current max	Diode type	Maximum Operating Frequency	Maximum Collector Emitter Saturation Voltage	Maximum Transition Frequency	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Category	Maximum Emitter Base Voltage	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Collector Current (DC) (Max)	Collector-Base Voltage	Collector-Emitter Voltage	Emitter-Base Voltage	DC Current Gain (Min)	Collector Current (DC)	DC Current Gain	Collector Emitter Voltage V(br)ceo	Power Dissipation Pd	DC Collector Current	DC Current Gain hFE	RF Transistor Case	MSL	Continuous Collector Current Ic	Continuous Collector Current Ic Max	Current Ic Continuous a Max	Current Ic hFE	Device Marking	Full Power Rating Temperature	Gain Bandwidth ft Min	Gain Bandwidth ft Typ	Hfe Min	No. of Transistors	Transistor Case Style	Voltage Vcbo	Current,Base	Current,Collector	Current,CollectorCutoff	Current,Gain	Gain,DCCurrent,Maximum	Gain,DCCurrent,Minimum	Resistance,Thermal,JunctiontoCase	TransistorType	Voltage,Breakdown,CollectortoEmitter	Voltage,CollectortoBase	Voltage,CollectortoEmitter	Voltage,CollectortoEmitter,Saturation	Voltage,EmittertoBase	Voltage,Saturation,CollectortoEmitter	Transistor type	Power	Polarisation	Collector-emitter voltage	Collector current	RoHS UE	Dissipazione massima della potenza	Corrente di drain continua massima	Confezione	Nome standard sulla confezione	Capacità d'ingresso tipica @ Vds	Massima temperatura d'esercizio	Efficienza drain tipica	Massima tensione di drain alla fonte	Tipo di canale	Forma conduttore	Potenza in uscita	Numero di elementi per chip	Confezione fornitore	Modalità canale	Frequenza massima	Guadagno di potenza tipico	Temperatura d'esercizio minima	Numero dei pin	Number of Channels per Chip	Maximum Voltage Gain	Power Supply Type	Minimum Single Supply Voltage	Maximum Single Supply Voltage	Minimum Dual Supply Voltage	Maximum Dual Supply Voltage	Current - Output / Channel	Amplifier Type	-3db Bandwidth	Output Type	Current - Supply	Voltage - Supply, Single/Dual (±)	Slew Rate	Number of Circuits	Package/Case	Operating Supply Voltage	Input Voltage Range - Max	Available Set Gain	Supply Current	Number of Channels	Supply Voltage - Max	Supply Voltage - Min	Gain Bandwidth Product	不同 Ic、Vce 时的 DC 电流增益 (hFE)（最小值）	功率 - 最大值	电流 - 集电极 (Ic)（最大值）	电压 - 集射极击穿（最大值）
10 1N5711 Diode Small Signal Schottky 70V 0.015A 2-Pin DO-35 stmicroelectronics	询价	2DO-35	Small Signal Schottky Diode	-65 to 200 °C	Through Hole	Tape & Reel	DO-35	Tape & Reel (TR)	DO-204AH, DO-35, Axial	Lead free / RoHS Compliant	+200 °C	-65 °C	4000	Schottky Diodes & Rectifiers	Through Hole	RoHS Compliant	Single	2	DO-35	Compliant	200	430	-65	-	-	-	-	-	-	-	4000	20000	2mm	4.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	2	-65C to 200C	No	DO-204-AH	4.5(Max)	430mW	-	-	-	-	-	-	-	-	-	-	-	-	-	DO-35	-	-	-	497-2499-2	Through Hole	Compliant	-	-	-	-	-	-	-	430 mW	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2(Max)	2 x 4.5 x 2mm	2mm	:2	:No SVHC (20-Jun-2013)	:430mW	0.000137	85411000	DO-35	430mW	Switching	DO35	5	0.23 g	4000	4000	-	-	-	-	-	-	-	-	70 V	0.015 A	0.2@50V uA	1 V	0.015	70	0.2@50V	-65 to 200	1	1N5711	0.41V	18 weeks	0.015A	200°C	70V	0.1ns	RoHS-conform	15mA	2pF @ 0V, 1MHz	70V	Schottky - Single	0.015A	Schottky Diodes	0.015 A	0.2 uA at 50 V	- 65 C to + 200 C	1 V	70 V	70	0.2	1	0.015	:70V	:DO-35	:15mA	:SOD-27	:70V	:2pF	:Single	:1.93mm	:4.32mm	:15mA	:410mV	:70V	:2pF	:4000	:Axial Leaded	2pF	15mA	0.2μA	Ultrafast	200°C	-65to200°C	400K/W	1V	70V	410mV	1mA	70V	15mA	Schottky switching	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 2N5416 Trans GP BJT PNP 300V 1A 3-Pin TO-39 Bag stmicroelectronics	询价	3TO-39	PNP	-65 to 200 °C	Through Hole	Bag	TO-39	Bag	TO-205AD, TO-39-3 Metal Can	Lead free / RoHS Compliant	+200 °C	-65 °C	100	Transistors Bipolar - BJT	Through Hole	RoHS Compliant	Single	3	TO-39	Compliant	200	1000	-65	PNP	PNP	1 W	1	-	15 MHz	-	100	800	6.6mm	9.4mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	3	-65C to 200C	No	TO-205-AF	-	-	6.6(Max)	15 MHz	1	-	-	-	-	-	-	-	-	-	-	TO-39	-	-	-	497-2596-5	Through Hole	-	-	-	-	-	-	-	-	1000 mW	Military	-	300 V	1 A	30@50mA@10V	350 V	1	350	300	6	1A	300V	1W	30 @ 50mA, 10V	- 6 V	30	- 300 V	- 1 A	PNP	-	9.4(Max)	6.6 x 9.4 x 9.4mm	9.4mm	:3	:No SVHC (20-Jun-2013)	:10W	0.0024	85412900	TO-39	10W	Si	TO5	1	1.4 g	400	400	120	350 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	15(Min) MHz	2.5@5mA@50mA V	15(Min)	15MHz	2.5V @ 5mA, 50mA	50µA	Bipolar Power	6 V	- 2.5 V	15 MHz	1 A	350 V	300 V	6 V	30	1 A	30	:300V	:10W	:-1A	:30	:TO-39	:-	:1A	:1A	:1A	:50mA	:2N5416	:25°C	:15MHz	:15MHz	:30	:1	:TO-39	:350V	-0.5A	-1A	-50μA	120	120	30	17.5°C/W	PNP	-300V	-350V	-300V	-2.5V	-6V	-2.5V	PNP	10W	bipolar	350V	1A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD85025S-E Trans MOSFET N-CH 40V 7A 2-Pin Power SO-10RF Tube stmicroelectronics	询价	2Power SO-10RF	RF Power MOSFET	-65 to 165 °C	Surface Mount	Rail / Tube	PowerSO-10RF (Straight Lead)	Tube	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	400	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	2 +Tab	-	-	-	-	-	LDMOS	N-Channel	79 W	-	17.3dB	870MHz	-	50	400	3.5 mm	9.4 mm	Enhancement	40 V	7 A	-0.5\|15 V	40V	13.6V	300mA	7A	10W	15 V	7 A	25 W	40 V	N	STMicroelectronics	PD85025-E	79 W	Si	40 V	7 A	1 GHz	-	-	-	-	-	-	15 V	-	-	-65C to 165C	No	-	-	79000 mW	-	1000 MHz	1	MOSFET Power	Military	55@12.5V pF	40@12.5V pF	17.3 dB	66 %	1.5@12.5V pF	30W(Typ)	40 V	-	-	20(Min)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Compliant	79000	7	Tube	PowerSO-10RF (Straight lead)	55@12.5V	165	66	40	N	Flat	30(Typ)	1	PowerSO-10RF (Straight lead)	Enhancement	1000	17.3	-65	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SD2933 Trans MOSFET N-CH 125V 40A 4-Pin Case M-177 Tray stmicroelectronics	询价	4Case M-177	MOSFET	-65 to 200 °C	Screw	Boxed	M177	Tray	M177	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	5	Case M-177	Compliant	200	648000	-65	N-Channel	N-Channel	648 W	1	23.5dB	30MHz	400	25	50	-	-	Enhancement	125 V	40 A	±20 V	125V	50V	250mA	40A	300W	+/- 20 V	40 A	300 W	125 V	N	-	-	-	-	-	-	-	150	65	23.5	125	1000@50V	40	-	-	-	-	-	-	-	-	-	-	-	RF MOSFET Power	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SD1726 Trans GP BJT NPN 55V 20A 4-Pin(4+Tab) Case M-174 stmicroelectronics	询价	4Case M-174	NPN	-65 to 200 °C	Screw	Boxed	M174	Tray	M174	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF Bipolar	SMD/SMT	RoHS Compliant	Single Dual Emitter	4	Case M-174	Compliant	200	318000	-65	NPN	NPN	318 W	1	14dB	-	150(Min)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	-	-	-	-	-	-	-	-	318000 mW	-	-	55 V	20 A	18@1.4A@6V	110 V	20	110	55	4	20A	55V	318W	18 @ 1.4A, 6V	4 V	18	55 V	20 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SD57030 Trans MOSFET N-CH 65V 4A 3-Pin(2+Tab) Case M-243 stmicroelectronics	询价	3Case M-243	RF Power MOSFET	-65 to 200 °C	Screw	Boxed	M243	Bulk	M243	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	Case M-243	Compliant	200	74000	-65	LDMOS	N-Channel	74 W	1	15dB	945MHz	30	-	-	4.45 mm	20.57 mm	Enhancement	65 V	4 A	20 V	65V	28V	50mA	4A	30W	+/- 20 V	4 A	30 W	65 V	N	STMicroelectronics	SD57030	74 W	Si	65 V	4 A	1 GHz	1000	60	15	65	58@28V	4	+/- 20 V	-	2	-65C to 200C	No	-	20.57(Max)	74000 mW	4.45(Max)	1000 MHz	1	RF MOSFET Power	Military	58@28V pF	34@28V pF	15 dB	60 %	2.7@28V pF	30W	65 V	6.1(Max)	Case M-243	10(Min)	-	-	-	-	Compliant	1.8 S	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.8 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD57002-E Trans MOSFET N-CH 65V 0.25A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube stmicroelectronics	询价	4PowerSO-10RF (Formed lead)	RF MOSFET	-65 to 165 °C	Surface Mount	Rail / Tube	10-PowerSO	Tube	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	50	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Formed lead)	Compliant	165	4750	-65	LDMOS	N-Channel	4.75 W	1	15dB	960MHz	2(Min)	50	400	3.5 mm	7.5 mm	Enhancement	65 V	0.25 A	±20 V	65V	28V	10mA	250mA	2W	+/- 20 V	0.25 A	2 W	65 V	N	STMicroelectronics	PD57002-E	4.75 W	Si	65 V	250 mA	1 GHz	1000	45(Min)	15(Min)	65	7.1@28V	0.25	+/- 20 V	Gull-wing	-	-65C to 165C	No	PowerSO-10RF (Formed lead)	-	4750 mW	-	1000 MHz	1	-	Military	7.1@28V pF	5.8@28V pF	15(Min) dB	45(Min) %	0.1@28V pF	2W(Min)	65 V	-	PowerSO-10RF	10(Min)	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.25 A	�20 V	45 %	65 V	15 dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD54008L-E Trans MOSFET N-CH 25V 5A 8-Pin Power Flat T/R stmicroelectronics	询价	8Power Flat	RF MOSFET	-65 to 150 °C	Surface Mount	Tape & Reel	PowerFLAT™ (5x5)	Tape and Reel	8-PowerVDFN	Lead free / RoHS Compliant	+ 150 C	- 65 C	3000	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	14	Power Flat	Compliant	150	26700	-65	LDMOS	N-Channel	26.7 W	1	15dB	500MHz	8(Min)	3000	3000	-	-	Enhancement	25 V	5 A	-5\|15 V	25V	7.5V	200mA	5A	8W	15 V	5 A	8 W	25 V	N	STMicroelectronics	PD54008L-E	26.7 W	Si	25 V	5 A	1 GHz	1000	50(Min)	15(Min)	25	80@7.5V	5	-	No Lead	14	-65C to 150C	No	-	5	26700 mW	0.88	1000 MHz	1	-	Military	80@7.5V pF	60@7.5V pF	15(Min) dB	50(Min) %	6.6@7.5V pF	8W(Min)	25 V	5	Power Flat	-	15dB	LDMOS	497-6471-1	-	Compliant	-	200mA	25V	7.5V	5A	500MHz	8W	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	5 A	15 V	50 %	25 V	15 dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD54008S-E Trans MOSFET N-CH 25V 5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube stmicroelectronics	询价	4PowerSO-10RF (Straight lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Rail / Tube	PowerSO-10RF (Straight Lead)	Tube	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	50	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Straight lead)	Compliant	165	73000	-65	LDMOS	N-Channel	73 W	1	11.5dB	500MHz	8(Min)	50	400	3.5 mm	7.5 mm	Enhancement	25 V	5 A	±20 V	25V	7.5V	150mA	5A	8W	+/- 20 V	5 A	8 W	25 V	N	STMicroelectronics	PD54008	73 W	Si	25 V	5 A	1 GHz	1000	55	11.5	25	91@7.5V	5	+/- 20 V	Flat	-	-	-	PowerSO-10RF (Straight lead)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD55008TR-E Trans MOSFET N-CH 40V 4A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) T/R stmicroelectronics	询价	4PowerSO-10RF (Formed lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Cut Tape	PowerSO-10RF (Formed Lead)	Tape and Reel	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Lead free / RoHS Compliant	+ 150 C	- 65 C	600	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Formed lead)	Compliant	165	52800	-65	LDMOS	N-Channel	52.8 W	1	17dB	500MHz	8(Min)	600	600	3.5 mm	7.5 mm	Enhancement	40 V	4 A	±20 V	40V	12.5V	150mA	4A	8W	+/- 20 V	4 A	8 W	40 V	N	STMicroelectronics	PD55008	52.8 W	Si	40 V	4 A	1 GHz	1000	55	17	40	58@12.5V	4	+/- 20 V	Gull-wing	2	-	-	PowerSO-10RF (Formed lead)	9.4	-	3.5	-	-	RF MOSFET Power	-	-	-	-	-	-	-	-	7.5	-	-	-	-	497-6474-1	-	-	-	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PD55015STR-E Trans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) T/R stmicroelectronics	询价	4PowerSO-10RF (Straight lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Tape & Reel	PowerSO-10RF (Straight Lead)	Tape and Reel	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	600	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Straight lead)	Compliant	165	73000	-65	LDMOS	N-Channel	73 W	1	14dB	500MHz	15(Min)	600	600	3.5 mm	7.5 mm	Enhancement	40 V	5 A	±20 V	40V	12.5V	150mA	5A	15W	+/- 20 V	5 A	15 W	40 V	N	STMicroelectronics	PD55015-E	73 W	Si	40 V	5 A	1 GHz	1000	55	14	40	89@12.5V	5	+/- 20 V	Flat	-	-	-	PowerSO-10RF (Straight lead)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	14dB	LDMOS	-	-	-	-	150mA	40V	12.5V	5A	500MHz	15W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PD55035STR-E Trans MOSFET N-CH 40V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) T/R stmicroelectronics	询价	4PowerSO-10RF (Straight lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Tape & Reel	PowerSO-10RF (Straight Lead)	Tape and Reel	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	600	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Straight lead)	Compliant	165	95000	-65	LDMOS	N-Channel	95 W	1	16.9dB	500MHz	35(Min)	600	600	3.5 mm	7.5 mm	Enhancement	40 V	7 A	±20 V	40V	12.5V	200mA	7A	35W	+/- 20 V	7 A	35 W	40 V	N	STMicroelectronics	PD55035-E	95 W	Si	40 V	7 A	1 GHz	1000	62	16.9	40	92@12.5V	7	+/- 20 V	Flat	2	-	-	PowerSO-10RF (Straight lead)	9.4	-	3.5	-	-	RF MOSFET Power	-	-	-	-	-	-	-	-	7.5	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PD57045-E Trans MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF (Formed lead) Tube stmicroelectronics	询价	3PowerSO-10RF (Formed lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Rail / Tube	10-PowerSO	Tube	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	50	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Formed lead)	Compliant	165	73000	-65	LDMOS	N-Channel	73 W	1	14.5dB	945MHz	45(Min)	50	400	3.5 mm	7.5 mm	Enhancement	65 V	5 A	±20 V	65V	28V	250mA	5A	45W	+/- 20 V	5 A	45 W	65 V	N	STMicroelectronics	PD57045-E	73 W	Si	65 V	5 A	1 GHz	1000	50(Min)	14.5	65	86@28V	5	+/- 20 V	Gull-wing	2	-65C to 165C	No	PowerSO-10RF (Formed lead)	9.4	73000 mW	3.5	1000 MHz	1	-	Military	86@28V pF	47@28V pF	14.5 dB	50(Min) %	3.6@28V pF	45W(Min)	65 V	7.5	-	10(Min)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.7 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 PD57060S-E Trans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube stmicroelectronics	询价	4PowerSO-10RF (Straight lead)	RF Power MOSFET	-65 to 165 °C	Surface Mount	Rail / Tube	PowerSO-10RF (Straight Lead)	Tube	PowerSO-10 Exposed Bottom Pad	Lead free / RoHS Compliant	+ 150 C	- 65 C	50	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	PowerSO-10RF (Straight lead)	Compliant	165	79000	-65	LDMOS	N-Channel	79 W	1	14.3dB	945MHz	60(Min)	50	400	3.5 mm	7.5 mm	Enhancement	65 V	7 A	±20 V	65V	28V	100mA	7A	60W	+/- 20 V	7 A	60 W	65 V	N	STMicroelectronics	PD57060-E	79 W	Si	65 V	7 A	1 GHz	1000	54	14.3	65	83@28V	7	+/- 20 V	Flat	-	-65C to 165C	No	PowerSO-10RF (Straight lead)	-	79000 mW	-	1000 MHz	1	-	Military	83@28V pF	58@28V pF	14.3 dB	54 %	3@28V pF	60W(Min)	65 V	-	-	5(Min)	14.3dB	LDMOS	-	-	-	-	100mA	65V	28V	7A	945MHz	60W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.5(Min) S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PowerSO-10 Exposed Bottom Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SD57060 Trans MOSFET N-CH 65V 7A 3-Pin Case M-243 stmicroelectronics	询价	3Case M-243	MOSFET	-65 to 200 °C	Screw	Boxed	M243	Bulk	M243	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	Case M-243	Compliant	200	108000	-65	LDMOS	N-Channel	108 W	1	15dB	945MHz	60	25	50	4.45 mm	20.57 mm	Enhancement	65 V	7 A	±20 V	65V	28V	100mA	7A	60W	+/- 20 V	7 A	60 W	65 V	N	STMicroelectronics	SD57060	108 W	Si	65 V	7 A	1 GHz	1000	60	15	65	88@28V	7	+/- 20 V	-	3	-	-	-	20.57(Max)	-	4.45(Max)	-	-	RF MOSFET Power	-	-	-	-	-	-	-	-	6.1(Max)	-	-	-	-	-	-	-	2.5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SD57030-01 Trans MOSFET N-CH 65V 4A 3-Pin Case M-250 stmicroelectronics	询价	3Case M-250	RF Power MOSFET	-65 to 200 °C	Surface Mount	Boxed	M250	Bulk	M250	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	3	Case M-250	Compliant	200	74000	-65	LDMOS	N-Channel	74 W	1	15dB	945MHz	30	25	50	3.94 mm	9.91 mm	Enhancement	65 V	4 A	20 V	65V	28V	50mA	4A	30W	+/- 20 V	4 A	30 W	65 V	N	STMicroelectronics	SD57030	74 W	Si	65 V	4 A	1 GHz	1000	60	15	65	58@28V	4	+/- 20 V	-	3	-	-	-	9.91(Max)	-	3.94(Max)	-	-	RF MOSFET Power	-	-	-	-	-	-	-	-	6.09(Max)	-	-	-	-	-	-	-	1.8 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SD56120M Trans MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube stmicroelectronics	询价	5Case M-252	MOSFET	-65 to 200 °C	Screw	Rail / Tube	M252	Tube	M252	Lead free / RoHS Compliant	+ 150 C	- 65 C	15	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Dual	5	Case M-252	Compliant	200	236000	-65	LDMOS	N-Channel	236 W	2	16dB	860MHz	120	-	-	5.33 mm	22.05 mm	Enhancement	65 V	14 A	±20 V	65V	32V	400mA	14A	120W	+/- 20 V	14 A	120 W	65 V	N	STMicroelectronics	SD56120	236 W	Si	65 V	14 A	1 GHz	1000	50(Min)	16	65	221@28V	14	+/- 20 V	-	-	-65C to 200C	No	-	-	236000 mW	-	1000 MHz	2	RF MOSFET Power	Military	221@28V pF	48.9@28V pF	16 dB	50(Min) %	2.25@28V pF	120W	65 V	-	Case M-252	10(Min)	16dB	LDMOS	-	-	Compliant	3 S	400mA	65V	32V	14A	860MHz	120W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TS652ID SP Amp Variable Gain Amp Dual ±6V/12V 14-Pin SOIC stmicroelectronics	询价	14SOIC	Variable Gain Amplifier	-40 to 85 °C	Surface Mount	Rail / Tube	14-SO	Tube	SO-14	Lead free / RoHS Compliant	+ 85 C	- 40 C	50	Special Purpose Amplifiers	SMD/SMT	No	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	30 dB	Single\|Dual	5 V	12 V	±2.5 V	±6 V	28mA	Variable Gain	110MHz	Differential	28mA	5 V ~ 12 V, ±2.5 V ~ 6 V	100 V/µs	2	14-SOIC (0.154", 3.90mm Width)	5 V to 12 V	12 V	- 9 dB to + 30 dB	28 mA	2 Channel	12 V	5 V	110 MHz	-	-	-	-
3 SD1275-01 Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray stmicroelectronics	询价	4Case M-113	NPN	-65 to 200 °C	Screw	Boxed	M113	Tray	M113	Lead free / RoHS Compliant	+ 150 C	- 65 C	25	Transistors RF Bipolar	SMD/SMT	RoHS Compliant	Single Dual Emitter	4	Case M-113	Compliant	200	70000	-65	NPN	NPN	70 W	1	9dB	-	40(Min)	-	-	7.11 mm	24.89 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	STMicroelectronics	SD1275	70 W	Si	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	24.89	-	7.11	-	-	-	-	-	-	-	-	-	-	-	6.48	-	-	9dB	NPN	-	Surface Mount	-	-	-	-	-	-	-	-	70000 mW	-	-	16 V	8 A	20@250mA@5V	36 V	8	36	16	4	8A	16V	70W	20 @ 250mA, 5V	4 V	20	16 V	8 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20 at 250 mA at 5 V	36 V	-	-	-	-	-	M113	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20 @ 250mA, 5V	70W	8A	16V
2 PD54003L-E Trans MOSFET N-CH 25V 4A 14-Pin Power Flat T/R stmicroelectronics	询价	14Power Flat	RF Power MOSFET	-65 to 150 °C	Surface Mount	Tape & Reel	PowerFLAT™ (5x5)	Tape and Reel	8-PowerVDFN	Lead free / RoHS Compliant	+ 150 C	- 65 C	3000	Transistors RF MOSFET	SMD/SMT	RoHS Compliant	Single	14	Power Flat	Compliant	150	19500	-65	LDMOS	N-Channel	19.5 W	1	20dB	500MHz	3	3000	3000	-	-	Enhancement	25 V	4 A	±15 V	25V	7.5V	50mA	4A	3W	15 V	4 A	3 W	25 V	N	STMicroelectronics	PD54003L-E	19.5 W	Si	25 V	4 A	1 GHz	1000	55	20	25	54@7.5V	4	-	No Lead	-	-65C to 150C	No	-	-	19500 mW	-	1000 MHz	1	-	Military	54@7.5V pF	43@7.5V pF	20 dB	55 %	4@7.5V pF	3W	25 V	-	Power Flat	20(Min)	20dB	LDMOS	497-6470-1	-	-	-	50mA	25V	7.5V	4A	500MHz	3W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-