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DDR SDRAM存储芯片

Sharp Corporation- DDR SDRAM存储芯片

夏普公司创立于1912年，总部位于日本大阪，是一家全球化的综合性电子企业。其夏普微电子部门负责半导体与电子元器件的销售和市场推广，美洲夏普微电子（SMA）设在华盛顿州卡马斯，是重要的区域分支。产品线涵盖液晶显示屏（LCD）、光电器件（LED、激光二极管）、存储器（闪存）、图像传感器（CCD/CMOS）以及射频元件。同时提供显示驱动IC、触摸屏控制器等接口方案，广泛用于消费电子、汽车、工业和医疗设备等领域。夏普在液晶显示领域享有盛誉，尤其是中小尺寸面板在移动和车载市场占据领先地位。尽管整体半导体营收未进入全球前十，但在光电耦合器、特种存储器和高端图像传感器等细分市场保持竞争优势。凭借长期的技术积累和完善的全球支持体系，夏普成为寻求先进电子解决方案制造商的可信赖伙伴。公司持续在物联网、节能器件和智能传感等方向进行创新。

DDR SDRAM存储芯片 - 型号列表

共 34 个型号

制造商零件编号	库存	价格	封装形式	工作温度	标准包装数量	供电电压	额定电压	密度	接口	主要材料	安装位置	定时调节方式	扇区大小	架构	存储器架构	地址数量	制造商全称	射频系列/标准	标准封装名称	欧盟RoHS	每元件位数	引脚样式	包装数量	位数	字容量	尺寸	页面模式支持	电压	最大额定电流	最小供电电压	共模瞬态抗扰度（最小）	位置/触点数量	宽度	安装类型	总长度	外壳尺寸-插件	印刷电路板数量
LH28F800BGHB-BTLZE NOR Flash Parallel 3V/3.3V 8Mbit 512K x 16bit 100ns 48-Pin FBGA sharp microelectronics	-		48FBGA	-40 to 85 °C	Trays	-	3\|3.3 V	8 Mb	Parallel	NOR	Bottom	Asynchronous	8Kbyte x 8\|64Kbyte x 15	Sectored	Asymmetrical	19 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F128SPHTD-PTLZ5 NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP sharp microelectronics	-		56TSOP	-40 to 85 °C	Trays	-	3\|3.3 V	128 Mb	Parallel	NOR	-	Asynchronous	128Kbyte x 128	Sectored	Symmetrical	24/23 Bit	-	-	-	-	-	-	-	-	-	4/8 word/byte	Yes	-	-	-	-	64/64 Mb	-	-	-	-	-
LRS1383C 32M (2MX16) FLASH, 8M (512KX16) SRAM, 3V, CSP72 sharp microelectronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F160BVHE-TTL90 NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP sharp microelectronics	-		48TSOP	-40 to 85 °C	Trays	-	3 V	16 Mb	Parallel	NOR	Top	Asynchronous	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LHF00L47 8MB NOR FLASH FOR CISCO ROHS COMPLIANT sharp microelectronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F160BVE-BTL10 16M (2MX8/1MX16) 3V, BOOT BLOCK, BOT, TSOP48, COM sharp microelectronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LRS1392A Combo Mem 4Mx16 Flash + 512Kx16 SRAM 3V 72-Pin CSP sharp microelectronics	-		72CSP	-25 to 85 °C	Trays	3 V	-	-	-	-	-	-	-	-	-	-	4Mx16 Flash + 512Kx16 SRAM	LRS1392A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F800BJHE-PBTLT9 NOR Flash Parallel 3V/3.3V 8Mbit 1M x 8bit 90ns 48-Pin TSOP sharp microelectronics	10	1: ¥26.248	48TSOP	-40 to 85 °C	Trays	Yes	3\|3.3 V	8 Mb	Parallel	NOR	Bottom	Asynchronous	8Kbyte x 8\|64Kbyte x 15	Sectored	Asymmetrical	20 Bit	-	-	TSOP	Compliant	8	Gull-wing	TSOP	48	1M	-	-	2.7 to 3.6\|11.7 to 12.3	30	3.6	Industrial	-	-	-	-	-	-
LRS1806C Combo Mem 4Mx16 Flash + 1Mx16 SRAM 3V 72-Pin CSP sharp microelectronics	-		72CSP	-30 to 85 °C	Trays	3 V	-	-	-	-	-	-	-	-	-	-	4Mx16 Flash + 1Mx16 SRAM	LRS1806C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SHPLH28F640BFHEP!A NOR Flash Parallel 3V/3.3V 64Mbit 4M x 16bit 70ns 48-Pin TSOP sharp microelectronics	-		48TSOP	-40 to 85 °C	-	-	3\|3.3 V	64 Mb	Parallel	NOR	Bottom	Asynchronous	8Kbyte x 8\|64Kbyte x 127	Sectored	Asymmetrical	22 Bit	-	-	-	-	-	-	-	-	-	8 word	Yes	-	-	-	-	-	-	-	-	-	-
LH28F160BVE-TTL90 NOR Flash Parallel 3V/3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP sharp microelectronics	-		48TSOP	0 to 70 °C	Trays	Yes	3\|3.3 V	16 Mb	Parallel	NOR	Top	Asynchronous	8Kbyte x 8\|64Kbyte x 31	Sectored	Asymmetrical	21/20 Bit	-	-	TSOP	Not Compliant	8/16	Gull-wing	TSOP	48	2M/1M	-	-	2.7 to 3.6\|11.4 to 12.6	30	3.6	Commercial	-	-	-	-	-	-
LRS1331 Combo Mem 1Mx16 Flash + 256Kx16 SRAM 3V 72-Pin FBGA sharp microelectronics	-		72FBGA	-25 to 85 °C	Trays	2.7 to 3.6 V	-	-	-	-	-	-	-	-	-	-	1Mx16 Flash + 256Kx16 SRAM	LRS1331	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LRS1342 Combo Mem 1Mx16 Flash + 128Kx16 SRAM 3V 72-Pin FBGA sharp microelectronics	-		72FBGA	-25 to 85 °C	Trays	2.7 to 3.6 V	-	-	-	-	-	-	-	-	-	-	1Mx16 Flash + 128Kx16 SRAM	LRS1342	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LRS1370 Combo Mem 1Mx16 Flash + 128Kx16 SRAM 3V 72-Pin CSP sharp microelectronics	-		72CSP	-25 to 85 °C	Trays	2.7 to 3.6 V	-	-	-	-	-	-	-	-	-	-	1Mx16 Flash + 128Kx16 SRAM	LRS1370	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LRS1806A Combo Mem 4Mx16 Flash + 1Mx16 SRAM 3V 72-Pin CSP sharp microelectronics	-		72CSP	-25 to 85 °C	Trays	2.7 to 3.6 V	-	-	-	-	-	-	-	-	-	-	4Mx16 Flash + 1Mx16 SRAM	LRS1806A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F640BFHE-PBTLDY 64M (4MX16) 3V, BOOT BLOCK, BOT, TSOP48, IND, HAZMAT 64M 90ns Access time Smart Bottom Boot Block sharp microelectronics	2880	1: ¥112.20	-	85	-	Yes	3	64M	-	-	Bottom	-	-	-	-	-	-	-	TSOP	Compliant	16	Gull-wing	TSOP	48	4M	-	-	-	-	-	-	-	-	-	-	-	-
LH28F160BJHE-BTLTH NOR Flash Parallel 3V/3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP sharp microelectronics	10	1: ¥41.208	48TSOP	-25 to 85 °C	Trays	Yes	3\|3.3 V	16 Mb	Parallel	NOR	Bottom	Asynchronous	8Kbyte x 8\|64Kbyte x 31	Sectored	Asymmetrical	21/20 Bit	-	-	TSOP	Compliant	8/16	Gull-wing	TSOP	48	2M/1M	-	-	2.7 to 3.6\|11.7 to 12.3	30	3.6	Industrial	-	18.4	Surface Mount	12	1	48
LH28F320BFHE-PTTL60 NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 60ns 48-Pin TSOP sharp microelectronics	49	1: ¥72.964	48TSOP	-40 to 85 °C	Trays	Yes	3\|3.3 V	32 Mb	Parallel	NOR	Top	Asynchronous	8Kbyte x 8\|64Kbyte x 63	Sectored	Asymmetrical	21 Bit	-	-	TSOP	Compliant	16	Gull-wing	TSOP	48	2M	8 word	Yes	11.7 to 12.3	25	3.6	Industrial	-	-	-	-	-	-
LH28F320BFHE-PTTLE7 32M,SMART,TOP BOOT BLOCK, 80NS sharp microelectronics	10	1: ¥66.98	48TSOP	-	Trays	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LH28F640BFHE-PTTL60 NOR Flash Parallel 3V/3.3V 64Mbit 4M x 16bit 60ns 48-Pin TSOP sharp microelectronics	10	1: ¥103.02	48TSOP	-40 to 85 °C	Trays	-	3\|3.3 V	64 Mb	Parallel	NOR	Top	Asynchronous	8Kbyte x 8\|64Kbyte x 127	Sectored	Asymmetrical	22 Bit	-	-	-	-	-	-	-	-	-	8 Words	Yes	-	-	-	-	-	-	-	-	-	-

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Sharp Corporation- DDR SDRAM存储芯片

DDR SDRAM存储芯片 - 型号列表

密度

地址数量

射频系列/标准

封装形式

扇区大小

工作温度

制造商全称

字容量

额定电压

尺寸

供电电压

电压

每元件位数

安装位置

存储器架构

欧盟RoHS

最大额定电流

共模瞬态抗扰度（最小）