semiconductors- 二极管
03
二极管 - 型号列表
共 61 个型号| 制造商零件编号 | 库存 | 价格 | 零件状态 | 转速 | 测试电流 | 最小输入电压 | 反向恢复时间（trr） | 直流反向电压（Vr）（最大） | 包装方式 | 安装类型 | 封装形式 | 供应商器件封装 | 技术 | 结工作温度 | 电容 @ Vr, F | 平均整流电流 Io | 制造商 | 系列 | 基础产品编号 | CMS筛选器头BPN | CMS筛选头系列 | 二极管配置 | 平均整流电流（每二极管） | 制造商全称 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | - | Obsolete | Zero Recovery Time > 500mA (Io) | 100 µA @ 650 V | 1.4 V @ 20 A | 0 ns | 650 V | Tube | Through Hole | TO-247-2 | TO-247-2 | SiC (Silicon Carbide) Schottky | 175°C | 1200pF @ 1V, 1MHz | 20A | WeEn Semiconductors | - | WNSC6 | - | - | - | - | - | |
| - | Active | Fast Recovery =< 500ns, > 200mA (Io) | 10 µA @ 600 V | 2.75 V @ 30 A | 45 ns | 600 V | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 175°C | - | 30A | WeEn Semiconductors | - | BYC30 | - | - | - | - | - | |
| - | Active | Fast Recovery =< 500ns, > 200mA (Io) | 10 µA @ 600 V | 2 V @ 10 A | 35 ns | 600 V | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 175°C | - | 10A | WeEn Semiconductors | - | BYV10 | - | - | - | - | - | |
| 10 | 1: ¥15.8564 | Obsolete | Zero Recovery Time > 500mA (Io) | 100 µA @ 650 V | 1.7 V @ 16 A | 0 ns | 650 V | Tube | Through Hole | TO-220-2 | TO-220AC | SiC (Silicon Carbide) Schottky | 175°C (Max) | 534pF @ 1V, 1MHz | 16A | WeEn Semiconductors | - | - | NXPSC | - | - | - | - |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 100 µA @ 650 V | 1.7 V @ 16 A | 0 ns | 650 V | Tube | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | SiC (Silicon Carbide) Schottky | 175°C (Max) | 534pF @ 1V, 1MHz | 16A | WeEn Semiconductors | - | - | NXPSC | - | - | - | - | |
| 10 | 1: ¥28.0182 | Obsolete | Zero Recovery Time > 500mA (Io) | 80 µA @ 650 V | 1.7 V @ 12 A | 0 ns | 650 V | Tube | Through Hole | TO-220-2 | TO-220AC | SiC (Silicon Carbide) Schottky | 175°C (Max) | 380pF @ 1V, 1MHz | 12A | WeEn Semiconductors | - | - | NXPSC | - | - | - | - |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 30 µA @ 650 V | 1.7 V @ 6 A | 0 ns | 650 V | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | SiC (Silicon Carbide) Schottky | 175°C | 198pF @ 1V, 1MHz | 6A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - | |
| - | Obsolete | No Recovery Time > 500mA (Io) | 50 µA @ 650 V | 1.7 V @ 8 A | 0 ns | 650 V | Tube | Through Hole | TO-247-3 | TO-247-3 | SiC (Silicon Carbide) Schottky | 175°C | - | - | - | - | WNSC1 | - | - | 1 Pair Common Cathode | 16A | WeEn Semiconductors | |
| - | Obsolete | No Recovery Time > 500mA (Io) | 40 µA @ 650 V | 1.7 V @ 8 A | 0 ns | 650 V | Tube | Through Hole | TO-247-3 | TO-247-3 | SiC (Silicon Carbide) Schottky | 175°C | - | - | - | - | WNSC2 | - | - | 1 Pair Common Cathode | 16A | WeEn Semiconductors | |
| - | Active | No Recovery Time > 500mA (Io) | 50 µA @ 650 V | 1.7 V @ 10 A | 0 ns | 650 V | Tube | Through Hole | TO-247-3 | TO-247-3 | SiC (Silicon Carbide) Schottky | 175°C | - | - | - | - | WNSC2 | - | - | 1 Pair Common Cathode | 20A | WeEn Semiconductors | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 25 µA @ 650 V | 1.7 V @ 4 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | SiC (Silicon Carbide) Schottky | 175°C (Max) | 141pF @ 1V, 1MHz | 4A | WeEn Semiconductors | - | WNSC0 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 40 µA @ 650 V | 1.7 V @ 6 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | SiC (Silicon Carbide) Schottky | 175°C (Max) | 190pF @ 1V, 1MHz | 6A | WeEn Semiconductors | - | WNSC0 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 50 µA @ 650 V | 1.7 V @ 8 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | SiC (Silicon Carbide) Schottky | 175°C (Max) | 267pF @ 1V, 1MHz | 8A | WeEn Semiconductors | - | WNSC0 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 60 µA @ 650 V | 1.7 V @ 10 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | SiC (Silicon Carbide) Schottky | 175°C (Max) | 328pF @ 1V, 1MHz | 10A | WeEn Semiconductors | - | - | WNSC1 | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 60 µA @ 650 V | 1.7 V @ 12 A | 0 ns | 650 V | Tube | Through Hole | TO-247-2 | TO-247-2 | SiC (Silicon Carbide) Schottky | 175°C | 328pF @ 1V, 1MHz | 12A | WeEn Semiconductors | - | WNSC1 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 20 µA @ 650 V | 1.7 V @ 4 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | SiC (Silicon Carbide) Schottky | 175°C | 125pF @ 1V, 1MHz | 4A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 20 µA @ 650 V | 1.7 V @ 4 A | 0 ns | 650 V | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | SiC (Silicon Carbide) Schottky | 175°C | 125pF @ 1V, 1MHz | 4A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 30 µA @ 650 V | 1.7 V @ 6 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | SiC (Silicon Carbide) Schottky | 175°C | 198pF @ 1V, 1MHz | 6A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 30 µA @ 650 V | 1.7 V @ 6 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | SiC (Silicon Carbide) Schottky | 175°C | 198pF @ 1V, 1MHz | 6A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - | |
| - | Obsolete | Zero Recovery Time > 500mA (Io) | 40 µA @ 650 V | 1.7 V @ 8 A | 0 ns | 650 V | Tape & Reel (TR) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | SiC (Silicon Carbide) Schottky | 175°C | 260pF @ 1V, 1MHz | 8A | WeEn Semiconductors | - | WNSC2 | - | - | - | - | - |
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