ROHM Co., Ltd.- MOSFET模块

罗姆株式会社（ROHM Co., Ltd.）创立于1958年，总部位于日本京都市，是全球知名的跨国半导体及电子元器件制造商。公司始终秉持“品质第一”的企业方针，将产品质量与可靠性置于首位。罗姆的业务涵盖集成电路（IC）、分立器件、光学元器件、无源元件、模块及医疗器具等多个领域。其核心IC产品线包括电源管理IC、电机驱动器、LED驱动器及标准逻辑IC，同时还提供运算放大器和比较器等高性能模拟芯片。在分立器件方面，罗姆是功率器件领域的领先者，拥有碳化硅（SiC）MOSFET、肖特基势垒二极管、IGBT以及EcoGaN™氮化镓器件等高效能电源转换产品。公司还供应丰富的传感器产品，如霍尔传感器、温度传感器和环境光传感器，以及高可靠性电阻器和硅电容器。罗姆深耕汽车电子和工业设备市场，以提供坚固耐用、生命周期长且符合严苛可靠性标准的产品著称。目前，罗姆的研发、销售和生产网络遍布全球，并高度重视中国市场，已在大连和天津设立工厂，并在上海和深圳设有设计及品质保证中心。凭借在系统IC和先进功率半导体方面的技术优势，罗姆已成为全球电子产业中首屈一指的主导企业。

MOSFET模块 - 型号列表

共 167 个型号

制造商零件编号	库存	价格	连续漏极电流（Id）@ 25°C	包装方式	封装形式	工作温度	系列	Vgs(th)（最大）@ Id	FET特性	漏源电压（Vdss）	输入电容（Ciss）（最大）@ Vds	安装类型	供应商器件封装	最大栅源电压 Vgs	FET类型	最大功耗	导通电阻 Rds(on) (最大) @ Id, Vgs	栅极电荷（Qg）（最大）@ Vgs	技术	零件状态	制造商	等级	资质认证	驱动电压（最大Rds On，最小Rds On）	基础产品编号	RoHS	制造商全称	配置	最大功率	产品	工厂包装数量	平均正向功率	集电极-发射极饱和电压（最大）@ Vge, Ic	安装样式	类型	标准包装数量	海关税号	晶体管类型	阈值电压	重量	引脚数	材料表面处理	通道数量	汽车级	无铅定义	空闲电流，典型值 @ 25°C	供电电压 (Vcc/Vdd)	高度	长度	下降时间	上升时间（典型）	首抽头延迟	开关时间（Ton, Toff）（最大）
3 BSM120D12P2C005 SIC PWR MODULE 1200V 120A Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode) MODULE, POWER, SIC, 1200V, 120A SiC Power Module 120A 1200V Rohm Semiconductor	12	12: ¥1,989.252	120A	*	Module	:-40°C	*	2.7V @ 22mA	Silicon Carbide (SiC)	1200V (1.2kV)	14000pF @ 10V	*	Module	-	2 N-Channel (Half Bridge)	:780W	-	-	-	-	-	-	-	-	-	RoHS Compliant	-	-	780W	-	-	-	-	-	-	1	85359000	:N Channel	:2.7V	0.05	:10	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
3 BSM180D12P2C101 SIC PWR MOD DMOS HALF BRIDGE MODULE, POWER, SIC, 1200V, 180A Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) SiC Power Module 180A 1200V Rohm Semiconductor	12	1: ¥7,068.9639	180A	Bulk	Module	:-40°C	*	4V @ 35.2mA	Silicon Carbide (SiC)	1200V (1.2kV)	23000pF @ 10V	*	Module	-	2 N-Channel (Half Bridge)	:1.13kW	-	-	-	-	-	-	-	-	-	-	-	-	1130W	-	-	-	-	-	-	1	85359000	:N Channel	:2.7V	0.05	:10	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
BSM300D12P2E001 MOSFET 2N-CH 1200V 300A Discrete Semiconductor Modules 300A SiC Power Module SICDMOS 1200V 300A 1.6V Modul Rohm Semiconductor	10	1: ¥4,643.7461	300 A	Tray	MODUL	- 40 C	BSMx	2.7 V	-	-	-	-	-	22 V	-	-	THT mOhm	SiC nC	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	SiC-DSMOSFET, SiC-SBD	-	Power MOSFET Modules	4	1875 W	1.6 V	Screw	SiC Power Module	-	-	-	-	-	-	-	1 Channel	NO	RoHS-conform	1450 A	300 V	17 mm	122 mm	-	-	-	-
BSM080D12P2C008 Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V ROHM Semiconductor	12	1: ¥2,224.535	80 A	Bulk	Module	+ 150 C	BSMx	-	-	-	-	-	-	- 6 V, + 22 V	-	-	-	-	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	Half-Bridge	-	Power Semiconductor Modules	12	600 W	1.2 kV	Screw	SiC Power Module	-	-	-	-	-	-	-	2 Channel	-	-	-	-	-	-	-	-	-	-
BSM180D12P3C007 Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD ROHM Semiconductor	10	1: ¥10,800.00	180 A	Tray	Module	+ 150 C	-	-	-	-	-	-	-	- 4 V, + 22 V	-	-	-	-	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	Half-Bridge	-	Power Semiconductor Modules	12	880 W	1200 V	Screw	SiC Power Module	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50 ns	70 ns	165 ns	50 ns
R6511KNXC7G . R6511KNXC7G - N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	90	3: ¥22.0959	11A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 320µA	-	650 V	760 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	53W (Tc)	400mOhm @ 3.8A, 10V	22 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6511	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6524KNX3C16 . R6524KNX3C16 - N-Channel 650 V 24A (Tc) 253W (Tc) Through Hole TO-220AB from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1000: ¥14.6539	24A (Tc)	Tape & Reel (TR), Cut Tape (CT)	TO-220-3	150°C (TJ)	-	5V @ 750µA	-	650 V	1850 pF @ 25 V	Through Hole	TO-220AB	±20V	N-Channel	253W (Tc)	185mOhm @ 11.3A, 10V	45 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6524	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6511ENXC7G . R6511ENXC7G - N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	54	3: ¥22.098	11A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 320µA	-	650 V	670 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	53W (Tc)	400mOhm @ 3.8A, 10V	32 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6511	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6015KNXC7G . R6015KNXC7G - N-Channel 600 V 15A (Tc) 60W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	810	7: ¥22.7295	15A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	1050 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	60W (Tc)	290mOhm @ 6.5A, 10V	27.5 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6015	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6009ENXC7G . R6009ENXC7G - N-Channel 600 V 9A (Ta) 48W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	100: ¥15.3921	9A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 1mA	-	600 V	430 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	48W (Tc)	535mOhm @ 2.8A, 10V	23 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6009	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4062KEHRC11 . SCT4062KEHRC11 - N-Channel 1200 V 26A (Tc) 115W Through Hole TO-247N from Rohm Semiconductor. from now! ROHM Co., Ltd.	260	2: ¥82.0541	26A (Tc)	Tube	TO-247-3	175°C (TJ)	-	4.8V @ 6.45mA	-	1200 V	1498 pF @ 800 V	Through Hole	TO-247N	+21V, -4V	N-Channel	115W	81mOhm @ 12A, 18V	64 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6007ENXC7G . R6007ENXC7G - N-Channel 600 V 7A (Ta) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1050	100: ¥14.7507	7A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 1mA	-	600 V	390 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	620mOhm @ 2.4A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6007	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R8005ANJGTL . R8005ANJGTL - N-Channel 800 V 5A (Tc) 120W (Tc) Surface Mount TO-263S from Rohm Semiconductor. from now! ROHM Co., Ltd.	1964	1: ¥31.008	5A (Tc)	Tape & Reel (TR), Cut Tape (CT)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	150°C (TJ)	-	5V @ 1mA	-	800 V	500 pF @ 25 V	Surface Mount	TO-263S	±30V	N-Channel	120W (Tc)	2.1Ohm @ 2.5A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R8005	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4026DRHRC15 . SCT4026DRHRC15 - N-Channel 750 V 56A (Tc) 176W Through Hole TO-247-4L from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1: ¥166.11	56A (Tc)	Tube	TO-247-4	175°C (TJ)	-	4.8V @ 15.4mA	-	750 V	2320 pF @ 500 V	Through Hole	TO-247-4L	+21V, -4V	N-Channel	176W	34mOhm @ 29A, 18V	94 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6520ENXC7G . R6520ENXC7G - N-Channel 650 V 20A (Tc) 68W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	1: ¥22.3044	20A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 630µA	-	650 V	1400 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	68W (Tc)	205mOhm @ 9.5A, 10V	61 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6520	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6020KNXC7G . R6020KNXC7G - N-Channel 600 V 20A (Tc) 68W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	816	7: ¥23.199	20A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	1550 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	68W (Tc)	196mOhm @ 9.5A, 10V	40 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6020	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6007KNXC7G . R6007KNXC7G - N-Channel 600 V 7A (Tc) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	100: ¥14.7507	7A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	470 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	620mOhm @ 2.4A, 10V	14.5 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6007	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6507ENXC7G . R6507ENXC7G - N-Channel 650 V 7A (Ta) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	20: ¥10.5407	7A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 200µA	-	650 V	390 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	665mOhm @ 2.4A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6507	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4045DRHRC15 . SCT4045DRHRC15 - N-Channel 750 V 34A (Tc) 115W Through Hole TO-247-4L from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1: ¥73.29	34A (Tc)	Tube	TO-247-4	175°C (TJ)	-	4.8V @ 8.89mA	-	750 V	1460 pF @ 500 V	Through Hole	TO-247-4L	+21V, -4V	N-Channel	115W	59mOhm @ 17A, 18V	63 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SP8M21HZGTB . SP8M21HZGTB - Mosfet Array 45V 6A (Ta), 4A (Ta) 2W (Ta) Surface Mount 8-SOP from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1: ¥17,034.00	6A (Ta), 4A (Ta)	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	8-SOIC (0.154", 3.90mm Width)	150°C (TJ)	-	2.5V @ 1mA	-	45V	1400pF @ 10V, 2400pF @10V	Surface Mount	8-SOP	-	-	-	25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V	21.6nC @ 5V, 28nC @ 5V	MOSFET (Metal Oxide)	Active	-	-	-	-	SP8M21	-	Rohm Semiconductor	N and P-Channel	2W (Ta)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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ROHM Co., Ltd.- MOSFET模块

MOSFET模块 - 型号列表

连续漏极电流（Id）@ 25°C

输入电容（Ciss）（最大）@ Vds

Vgs(th)（最大）@ Id

导通电阻 Rds(on) (最大) @ Id, Vgs

栅极电荷（Qg）（最大）@ Vgs

最大功耗

基础产品编号

封装形式

漏源电压（Vdss）

供应商器件封装

包装方式

最大栅源电压 Vgs

工作温度

最大功率

安装类型

平均正向功率

集电极-发射极饱和电压（最大）@ Vge, Ic

配置

FET类型

系列

产品

工厂包装数量

通道数量

制造商全称

技术

驱动电压（最大Rds On，最小Rds On）