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onsemi

onsemi- 绝缘栅双极型晶体管和功率驱动器

onsemi(前身为安森美半导体)是一家为绿色电子产品提供高性能、高能效硅解决方案的顶级供应商,总部位于美国亚利桑那州菲尼克斯。公司于1999年从摩托罗拉半导体部门分拆成立,逐步成长为全球半导体行业的创新者。核心业务涵盖电源管理、信号处理、逻辑、分立器件及定制半导体,服务于汽车、工业、通信、计算机、消费电子、医疗和军事/航空等市场。产品组合包括功率分立器件和模块,如MOSFET、IGBT以及EliteSiC品牌碳化硅器件,还有LDO、DC-DC转换器和控制器等电源管理IC。信号管理方面提供运算放大器、比较器、电压基准和数据转换器等产品。通过收购Catalyst Group,公司还拥有可编程存储器(EEPROM、闪存、NVRAM)以及数字电位计和微控制器监控电路。传感器产品线包括CMOS图像传感器、智能传感解决方案,以及激光雷达、超声波和接近传感器,用于高级驾驶辅助系统(ADAS)。公司在全球设有制造厂、设计中心和销售办事处,形成了增值型供应链网络,覆盖北美、欧洲和亚太地区。2009年公司收入为17.69亿美元,如今已成为《财富》美国500强企业和全球半导体前20强,尤其在汽车和工业功率半导体领域具有显著优势。

02
MODELS

绝缘栅双极型晶体管和功率驱动器 - 型号列表55 个型号

Vce(on) (Max) @ Vge, Ic

Switching Energy

Other Names

Td (on/off) @ 25°C

Power - Max

Power Dissipation

DC Collector Current

Power Dissipation Pd

Collector Emitter Voltage Vces

Weight (kg)

Gate Charge

Test Condition

Collector-Emitter Saturation Voltage

Current - Collector (Ic) (Max)

Continuous Collector Current at 25 C

Maximum Continuous Collector Current

Maximum Power Dissipation

Voltage - Collector Emitter Breakdown (Max)

Collector- Emitter Voltage VCEO Max

Maximum Gate Emitter Voltage

Supplier Device Package

Package / Case

Collector Emitter Voltage V(br)ceo

Maximum Power Dissipation

Maximum Collector Emitter Voltage

Standard Package

Current - Collector Pulsed (Icm)

Transistor Case Style

Maximum Continuous Collector Current

Supplier Package

Maximum Gate Emitter Voltage

Standard Package Name

Packaging

Minimum Operating Temperature

Maximum Operating Temperature

IGBT Type

Configuration

Reverse Recovery Time (trr)

Series

Maximum Operating Temperature

Package Width

Package Height

Mounting

Channel Type

PCB

Package Length

Pin Count

Lead Shape

Mounting Type

Input Type

rohs

Mounting Style

Operating Temperature Max

MSL

SVHC

Operating Temperature Range

Dimensions

Height

Length

Maximum Collector Emitter Voltage

Package Type

Width

Gate-Emitter Leakage Current

最大功率耗散

最大集电极-发射极电压

最大连续集电极电流

Pd - Power Dissipation

制造商零件编号价格/库存PackagingCurrent - Collector (Ic) (Max)Mounting TypeStandard PackageVce(on) (Max) @ Vge, IcVoltage - Collector Emitter Breakdown (Max)Supplier Device PackagePower - MaxInput TypePackage / CaseCurrent - Collector Pulsed (Icm)rohsContinuous Collector Current at 25 CCollector- Emitter Voltage VCEO MaxMounting StyleMaximum Gate Emitter VoltageMinimum Operating TemperatureMaximum Operating TemperatureRoHSPower DissipationTd (on/off) @ 25°CTest ConditionDC Collector CurrentCollector Emitter Voltage VcesPower Dissipation PdCollector Emitter Voltage V(br)ceoOperating Temperature MinOperating Temperature MaxTransistor Case StyleNo. of PinsMSLSVHCTransistor TypeWeight (kg)Tariff No.Gate ChargeSwitching EnergyConfigurationIGBT TypeGate-Emitter Leakage CurrentCollector-Emitter Saturation VoltageChannel TypePin CountOther NamesOperating Temperature RangeDimensionsHeightLengthMaximum Collector Emitter VoltageMaximum Continuous Collector CurrentMaximum Power DissipationPackage TypeWidthSupplier PackageMaximum Gate Emitter Voltage Maximum Continuous Collector Current EU RoHSMaximum Operating Temperature Standard Package NameMaximum Power Dissipation Maximum Collector Emitter Voltage Minimum Operating Temperature Lead ShapePackage Width Package Height MountingTabPCBPackage Length Reverse Recovery Time (trr)长度最大栅极发射极电压最高工作温度高度通道类型安装类型最低工作温度开关速度最大功率耗散宽度封装类型最大集电极-发射极电压引脚数目尺寸晶体管配置最大连续集电极电流SeriesFactory Pack QuantityBrandPd - Power DissipationTechnology配置Collector Current (DC)Collector-Emitter VoltageOperating Temperature (Max)Operating Temperature (Min)Operating Temperature ClassificationGate to Emitter Voltage (Max)Rad HardenedBoard Level Components
NGD18N40ACLBT4G
2
NGD18N40ACLBT4G

Trans IGBT Chip N-CH 430V 15A 3-Pin(2+Tab) DPAK T/R

ON Semiconductor

询价Tape and Reel15ASurface Mount2,5002V @ 4.5V, 10A430VDPAK-3115WLogicTO-252-3, DPak (2 Leads + Tab), SC-6350ALead free / RoHS Compliant15 A430 VThrough Hole18 V- 55 C+ 175 CRoHS Compliant115 W--:18A:1.8V:115W:400V:-55°C:175°C:TO-252:3:MSL 1 - Unlimited:No SVHC (20-Jun-2013):IGBT0.0003385412900------N3NGD18N40ACLBT4GOSTR:-55°C to +175°C--------DPAK1815Compliant175DPAK115000430-55Gull-wing6.22(Max)2.38(Max)Surface MountTab26.73(Max)-------------------------------
NGTB20N120LWG
6
NGTB20N120LWG

Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Rail

ON Semiconductor

询价Rail40AThrough Hole302.2V @ 15V, 20A1200VTO-247192WStandardTO-247-3200ALead free / RoHS Compliant40 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant77 W86ns/235ns600V, 20A, 10 Ohm, 15V:40A:1.8V:192W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.00143285412900200nC3.1mJ (on), 700µJ (off)Dual CollectorTrench and Field Stop100 nA2.2 VN3-:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V40 A192 WTO-2475.3mmTO-247±2040Compliant150TO-2471920001200-55Through Hole5.3(Max)21.08(Max)Through HoleTab316.26(Max)-------------------------------
NGTB20N120IHLWG
5
NGTB20N120IHLWG

Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Rail

ON Semiconductor

询价Rail40AThrough Hole302.2V @ 15V, 20A1200VTO-247192WStandardTO-247-3200ALead free / RoHS Compliant40 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant250 W-/235ns600V, 20A, 10 Ohm, 15V:20A:1.8V:250W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.000385412900200nC700µJ (off)Single Dual Collector---N3NGTB20N120IHLWGOS:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V40 A192 WTO-2475.3mmTO-247±2040Compliant150TO-2471920001200-55Through Hole5.3(Max)21.08(Max)Through HoleTab316.26(Max)-------------------------------
NGTB15N120IHLWG
4
NGTB15N120IHLWG

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Rail

ON Semiconductor

询价Rail30AThrough Hole302.2V @ 15V, 15A1200VTO-247156WStandardTO-247-3120ALead free / RoHS Compliant30 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant250 W-/165ns600V, 15A, 15 Ohm, 15V:15A:1.8V:250W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.000385412900160nC560µJ (off)Single Dual Collector---N3NGTB15N120IHLWGOS:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V30 A156 WTO-2475.3mmTO-247±2030Compliant150TO-2472500001200-55Through Hole5.3(Max)21.08(Max)Through HoleTab316.26(Max)-------------------------------
NGTB25N120IHLWG
6
NGTB25N120IHLWG

Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Rail

ON Semiconductor

询价Rail50AThrough Hole302.3V @ 15V, 25A1200VTO-247192WStandardTO-247-3200ALead free / RoHS Compliant50 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant250 W-/235ns600V, 25A, 10 Ohm, 15V:25A:1.85V:250W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.000385412900200nC800µJ (off)Single Dual Collector---N3NGTB25N120IHLWGOS:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V50 A192 WTO-2475.3mmTO-247±2050Compliant150TO-2471920001200-55Through Hole5.3(Max)21.08(Max)Through HoleTab316.26(Max)-----------------------50 A1200 V150C-55CMilitary�20 VNo-
NGTB40N120FLWG
5
NGTB40N120FLWG

Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail

ON Semiconductor

询价Rail80AThrough Hole302.2V @ 15V, 40A1200V*260WStandardTO-247160ACompliant80 A1200 VThrough Hole±20V-55 °C+150 °C-260 W130ns/385ns600V, 40A, 10 Ohm, 15V:80A:2V:260W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (16-Dec-2013):IGBT0.0054285412900415nC2.6mJ (on), 1.6mJ (off)Single Dual CollectorTrench and Field Stop200 nA2 VN3--16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V80 A260 WTO-2475.3mmTO-247±2080Compliant150TO-2472600001200-55Through Hole5.3(Max)21.08(Max)Through HoleTab316.26(Max)200ns------------------------------
NGB8207BNT4G
2
NGB8207BNT4G

Trans IGBT Chip N-CH 365V 20A 3-Pin(2+Tab) D2PAK T/R

ON Semiconductor

询价Tape and Reel20ASurface Mount8001.8V @ 4.5V, 10A365VD2PAK165WLogicTO-263-3, D²Pak (2 Leads + Tab), TO-263AB50ALead free / RoHS Compliant20 A365 VSMD/SMT15 V- 55 C+ 175 CRoHS Compliant165 W--:20A:1.5V:165W:365V:-55°C:175°C:TO-263:3:MSL 1 - Unlimited:No SVHC (20-Jun-2013):IGBT0.0003385412900------N3NGB8207BNT4GOSTR:-55°C to +175°C--------D2PAK±1520Compliant175D2PAK165000365-55Gull-wing-------------------------------------
NGD8205ANT4G
2
NGD8205ANT4G

Trans IGBT Chip N-CH 390V 20A 3-Pin(2+Tab) DPAK T/R

ON Semiconductor

询价Tape and Reel20ASurface Mount2,5001.9V @ 4.5V, 20A390VDPAK-3125WLogicTO-252-3, DPak (2 Leads + Tab), SC-6350ALead free / RoHS Compliant20 A390 VThrough Hole15 V- 55 C+ 175 CRoHS Compliant125 W-/5µs300V, 9A, 1 kOhm, 5V:20A:1.3V:125W:350V:-55°C:175°C:TO-252:3:MSL 1 - Unlimited:No SVHC (20-Jun-2013):IGBT0.0003385412900------N3NGD8205ANT4GOSTR:-55°C to +175°C--------DPAK±1520Compliant175DPAK125000390-55Gull-wing6.22(Max)2.38(Max)Surface MountTab26.73(Max)-------------------------------
NGTB15N120LWG
4
NGTB15N120LWG

IGBT 1200V 15A FS1 TO-247-3

ON Semiconductor

询价Tube30AThrough Hole302.2V @ 15V, 15A1200VTO-247156WStandardTO-247-3120ACompliant30 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant156 W72ns/165ns600V, 15A, 15 Ohm, 15V:30A:1.8V:156W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.0014485412900160nC2.1mJ (on), 560µJ (off)Dual CollectorTrench and Field Stop100 nA2.2 VN4-:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V30 A62.5 WTO-2475.3mm-----------------------------------------------
NGTB25N120LWG
5
NGTB25N120LWG

IGBT 1200V 25A LPT TO-247-3

ON Semiconductor

询价Tube50AThrough Hole302.3V @ 15V, 25A1200VTO-247192WStandardTO-247-3200ACompliant50 A1200 VThrough Hole±20V-55 °C+150 °CRoHS Compliant77 W89ns/235ns600V, 25A, 10 Ohm, 15V:50A:1.85V:192W:1.2kV:-55°C:150°C:TO-247:3:-:No SVHC (20-Jun-2013):IGBT0.00142985412900200nC4.4mJ (on), 800µJ (off)Single Dual CollectorTrench and Field Stop100 nA2.3 VP3-:-55°C to +150°C16.26 x 5.3 x 21.08mm21.08mm16.26mm1200 V50 A192 WTO-2475.3mm-----------------------------------------------
NGTG15N60S1EG
4
NGTG15N60S1EG

IGBT 15A 600V TO-220-3

ON Semiconductor

询价Tube30AThrough Hole501.7V @ 15V, 15A600VTO-220117WStandardTO-220-3120ACompliant30 A600 VThrough Hole±20V-55 °C+150 °CRoHS Compliant47 W65ns/170ns400V, 15A, 22 Ohm, 15V:30A:1.5V:117W:1.2kV:-55°C:150°C:TO-220:3:-:No SVHC (20-Jun-2013):IGBT0.0014348541290088nC900µJDual CollectorNPT100 nA1.95 VN4-:-55°C to +150°C10.28 x 4.82 x 15.75mm15.75mm10.28mm600 V30 A117 WTO-2204.82mm-----------------------------------------------
NGTB15N60EG
4
NGTB15N60EG

IGBT 15A 600V TO-220-3

ON Semiconductor

询价Tube30AThrough Hole501.95V @ 15V, 15A600VTO-220117WStandardTO-220-3120ACompliant30 A600 VThrough Hole±20V-55 °C+150 °CRoHS Compliant47 W78ns/130ns400V, 15A, 22 Ohm, 15V:30A:1.7V:117W:600V:-55°C:150°C:TO-220:3:-:No SVHC (20-Jun-2013):IGBT0.0014328541290080nC1.2mJDual CollectorNPT100 nA1.95 VN4-:-55°C to +150°C10.28 x 4.82 x 15.75mm15.75mm10.28mm600 V30 A117 WTO-2204.82mm----------------270ns------------------------------
NGTB15N60S1EG
4
NGTB15N60S1EG

IGBT 15A 600V TO-220-3

ON Semiconductor

询价Tube30AThrough Hole501.7V @ 15V, 15A600VTO-220117WStandardTO-220-3120ACompliant30 A600 VThrough Hole±20V-55 °C+150 °CRoHS Compliant47 W65ns/170ns400V, 15A, 22 Ohm, 15V:30A:1.5V:117W:600V:-55°C:150°C:TO-220:3:-:No SVHC (16-Dec-2013):IGBT0.001458541290088nC900µJDual CollectorNPT100 nA1.7 VN4-:-55°C to +150°C10.28 x 4.82 x 15.75mm15.75mm10.28mm600 V30 A117 WTO-2204.82mm----------------270ns------------------------------
NGTG30N60FWG
3
NGTG30N60FWG

IGBT 600V 60A 167W TO247

ON Semiconductor

询价Tube60AThrough Hole301.7V @ 15V, 30A600VTO-247167WStandardTO-247-3120ALead free / RoHS Compliant60 A600 VThrough Hole30 V- 55 C+ 150 CRoHS Compliant167 W81ns/190ns400V, 30A, 10 Ohm, 15V:60A:1.45V:167W:600V:-55°C:150°C:TO-247:3:-:No SVHC (16-Dec-2013):IGBT0.0054285412900170nC650µJ (on), 650µJ (off)SingleTrench100 nA1.45 V--NGTG30N60FWGOS--------------------------------------------------------
NGTG30N60FLWG
4
NGTG30N60FLWG

IGBT 600V 60A 250W TO247

ON Semiconductor

询价Tube60AThrough Hole301.9V @ 15V, 30A600VTO-247250WStandardTO-247-3120ALead free / RoHS Compliant60 A600 VThrough Hole30 V- 55 C+ 150 CRoHS Compliant250 W83ns/170ns400V, 30A, 10 Ohm, 15V:60A:1.65V:167W:600V:-55°C:150°C:TO-247:3:-:No SVHC (16-Dec-2013):IGBT0.0054285412900170nC700µJ (on), 280µJ (off)SingleTrench and Field Stop100 nA1.65 V--NGTG30N60FLWGOS--------------------------------------------------------
NGTB20N120IHRWG
3
NGTB20N120IHRWG

IGBT 1200V 40A 384W TO247

ON Semiconductor

询价Tube40AThrough Hole302.4V @ 15V, 20A1200VTO-247384WStandardTO-247-3120ALead free / RoHS Compliant40 A1200 VThrough Hole20 V- 55 C+ 175 CRoHS Compliant--/235ns600V, 20A, 10 Ohm, 15V-------------225nC450µJ (off)SingleTrench and Field Stop100 nA2.1 V--NGTB20N120IHRWGOS--------------------------16.25mm±20V+175 °C21.4mmN通孔-40 °C1MHz384 W5.3mmTO-2471200 V316.25 x 5.3 x 21.4mm40 ANGTB20N120IHR30ON Semiconductor384 WSi--------
NGTB20N135IHRWG
3
NGTB20N135IHRWG

IGBT 1350V 40A 394W TO247

ON Semiconductor

询价Tube40AThrough Hole302.65V @ 15V, 20A1350VTO-247394WStandardTO-247-3120ALead free / RoHS Compliant40 A1350 VThrough Hole25 V- 40 C+ 175 CRoHS Compliant--/245ns600V, 20A, 10 Ohm, 15V-------------234nC600µJ (off)SingleTrench and Field Stop100 nA2.2 V--NGTB20N135IHRWGOS--------------------------16.25mm±20V+175 °C21.4mmN通孔-40 °C1MHz394 W5.3mmTO-2471350 V316.25 x 5.3 x 21.4mm40 ANGTB20N135IHR30ON Semiconductor394 WSi--------
NGTB30N60FWG
4
NGTB30N60FWG

IGBT 600V 60A 167W TO247

ON Semiconductor

询价Tube60AThrough Hole301.7V @ 15V, 30A600VTO-247167WStandardTO-247-3120ALead free / RoHS Compliant60 A600 VThrough Hole30 V- 55 C+ 150 CRoHS Compliant167 W81ns/190ns400V, 30A, 10 Ohm, 15V:60A:1.45V:167W:600V:-55°C:150°C:TO-247:3:-:No SVHC (16-Dec-2013):IGBT0.0054285412900170nC650µJ (on), 650µJ (off)SingleTrench100 nA1.45 V--NGTB30N60FWGOS-------------------------72ns------------------------------
NGTB30N60FLWG
4
NGTB30N60FLWG

IGBT 600V 60A 250W TO247

ON Semiconductor

询价Tube60AThrough Hole301.9V @ 15V, 30A600VTO-247250WStandardTO-247-3120ALead free / RoHS Compliant60 A600 VThrough Hole30 V- 55 C+ 150 CRoHS Compliant250 W83ns/170ns400V, 30A, 10 Ohm, 15V:60A:1.65V:167W:600V:-55°C:150°C:TO-247:3:-:No SVHC (16-Dec-2013):IGBT0.0054285412900170nC700µJ (on), 280µJ (off)SingleTrench and Field Stop100 nA1.65 V--NGTB30N60FLWGOS-------------------------72ns------------------------------
NGTB30N135IHRWG
3
NGTB30N135IHRWG

IGBT 1350V 60A 394W TO247

ON Semiconductor

询价Tube60AThrough Hole302.65V @ 15V, 30A1350VTO-247394WStandardTO-247-3120ALead free / RoHS Compliant60 A1350 VThrough Hole25 V- 40 C+ 175 CRoHS Compliant394 W-/250ns600V, 30A, 10 Ohm, 15V-------------234nC850µJ (off)SingleTrench and Field Stop100 nA2.3 V--NGTB30N135IHRWGOS--------------------------16.25mm±20V+175 °C21.4mmN通孔-40 °C1MHz394 W5.3mmTO-2471350 V316.25 x 5.3 x 21.4mm60 ANGTB30N135IHR30ON Semiconductor394 WSi--------Y
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