NXP Semiconductors N.V.- MOSFET模块

恩智浦半导体（NXP Semiconductors N.V.）是一家全球领先的半导体公司，总部位于荷兰埃因霍温，拥有超过50年的创新历史，最初隶属于飞利浦，于2006年独立运营。公司专注于高性能混合信号（HPMS）和标准产品解决方案，融合了射频、模拟、电源管理、接口、安全与数字处理领域的深厚专长。其核心业务覆盖汽车、工业与物联网、移动设备以及通信基础设施，为全球顶级原始设备制造商提供服务。产品系列丰富，包括i.MX应用处理器、LPC和Kinetis微控制器、S32汽车平台、QorIQ/Layerscape通信处理器以及MIFARE和SmartMX等安全识别方案。在汽车领域，恩智浦提供车载网络、安全门禁和高级驾驶辅助系统（ADAS）芯片，其中S32域控制器芯片被广泛采用。公司是全球汽车半导体和安全识别（NFC）领域的头号供应商，在汽车微控制器和数字钥匙市场占据领先份额。2015年与飞思卡尔半导体合并后，恩智浦进一步增强了嵌入式处理实力和规模优势。在射频功率放大器、传感器（如FXOS/FXLS加速度计）以及边缘计算平台方面同样具有强大竞争力。按营收计算，恩智浦稳居全球半导体行业前十，超过60%的销售额来自于亚太地区，体现出深度融入区域电子产业生态的特点。

MOSFET模块 - 型号列表

共 20 个型号

制造商零件编号	库存	价格	系列	包装方式	零件状态	技术	制造商全称	安装类型	封装形式	供应商器件封装	增益	频率	噪声系数	配置	额定输出功率	额定电流（安培）	测试电压	额定电压	输出电流	制造商	等级	资质认证	FET特性	Vgs(th)（最大）@ Id	工作温度	导通电阻 Rds(on) (最大) @ Id, Vgs	栅极电荷（Qg）（最大）@ Vgs	漏源电压（Vdss）	输入电容（Ciss）（最大）@ Vds	连续漏极电流（Id）@ 25°C	FET类型	最大栅源电压 Vgs	最大功耗	基础产品编号
PMZB950UPEL315 Order NXP Semiconductors PMZB950UPEL315 (2156-PMZB950UPEL315-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	-		*	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S004NT6 . A5G35S004NT6 - RF Mosfet 48 V 12 mA 3.3GHz ~ 4.3GHz 16.9dB 24.5dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	16.9dB	3.3GHz ~ 4.3GHz	-	-	24.5dBm	-	48 V	125 V	12 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G23H065NT4 . A5G23H065NT4 - RF Mosfet 48 V 30 mA 2.3GHz ~ 2.4GHz 15.5dB 8.8W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	15.5dB	2.3GHz ~ 2.4GHz	-	-	8.8W	-	48 V	125 V	30 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PBHV8115TLH215 Order NXP Semiconductors PBHV8115TLH215 (2156-PBHV8115TLH215-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	4000	958: ¥2.108	*	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SA2T18H450W19SR6 . SA2T18H450W19SR6 - RF Mosfet 30 V 800 mA 1.805GHz ~ 1.88GHz 16.6dB 89W NI-1230S-4S4S from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		-	Bulk	Obsolete	LDMOS	NXP Semiconductors	Chassis Mount	NI-1230S-4S4S	NI-1230S-4S4S	16.6dB	1.805GHz ~ 1.88GHz	-	Dual	89W	10µA	30 V	65 V	800 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H110NT4 . A5G35H110NT4 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 15.3dB 15.1W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	15.3dB	3.3GHz ~ 3.7GHz	-	-	15.1W	-	48 V	125 V	70 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMCM6501UNE023 Order NXP Semiconductors PMCM6501UNE023 (2156-PMCM6501UNE023-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	90000	480: ¥4.284	*	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G26S008NT6 . A5G26S008NT6 - RF Mosfet 48 V 17 mA 2.496GHz ~ 2.69GHz 18.4dB 27dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	18.4dB	2.496GHz ~ 2.69GHz	-	-	27dBm	-	48 V	125 V	17 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S004N-3400 . A5G35S004N-3400 - RF Mosfet 48 V 12 mA 3.3GHz ~ 4.3GHz 16.9dB 24.5dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Bulk	Active	-	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	16.9dB	3.3GHz ~ 4.3GHz	-	-	24.5dBm	-	48 V	125 V	12 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G37H110NT4 . A5G37H110NT4 - RF Mosfet 48 V 70 mA 3.6GHz ~ 3.8GHz 15.1dB 13.5W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	15.1dB	3.6GHz ~ 3.8GHz	-	-	13.5W	-	48 V	125 V	70 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G26H110NT4 . A5G26H110NT4 - RF Mosfet 48 V 50 mA 2.496GHz ~ 2.69GHz 17.7dB 15W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	17.7dB	2.496GHz ~ 2.69GHz	-	-	15W	-	48 V	125 V	50 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H120NT2 . A5G35H120NT2 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 14.1dB 18W 10-DFN (7x10) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Tape & Reel (TR)	Obsolete	GaN	NXP USA Inc.	Surface Mount	10-PowerLDFN	10-DFN (7x10)	14.1dB	3.3GHz ~ 3.7GHz	-	-	18W	-	48 V	125 V	70 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A3G26D055N-2600 . A3G26D055N-2600 - RF Mosfet 48 V 40 mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Bulk	Active	-	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	13.9dB	100MHz ~ 2.69GHz	-	-	8W	-	48 V	125 V	40 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H110N-3400 . A5G35H110N-3400 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 15.3dB 15.1W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	10	1: ¥3,848.46	-	Bulk	Active	-	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	15.3dB	3.3GHz ~ 3.7GHz	-	-	15.1W	-	48 V	125 V	70 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMV100XPEA215 . PMV100XPEA215 - P-Channel 20 V 2.4A (Ta) 463mW (Ta), 4.45W (Tc) Surface Mount SOT-23 from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		-	Bulk	Obsolete	MOSFET (Metal Oxide)	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-	-	-	-	-	-	-	-	-	NXP Semiconductors	Automotive	AEC-Q101	-	1.25V @ 250µA	-55°C ~ 150°C (TJ)	128mOhm @ 2.4A, 4.5V	6 nC @ 4.5 V	20 V	386 pF @ 10 V	2.4A (Ta)	P-Channel	±12V	463mW (Ta), 4.45W (Tc)	-
A5G38H045NT4 . A5G38H045NT4 - RF Mosfet from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		*	Tape & Reel (TR)	Obsolete	-	NXP USA Inc.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002PS/ZLX . 2N7002PS/ZLX - Mosfet Array 60V 320mA Surface Mount 6-TSSOP from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		-	Bulk	Not For New Designs	MOSFET (Metal Oxide)	NXP Semiconductors	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP	-	-	-	2 N-Channel (Dual)	-	-	-	-	-	-	-	-	Logic Level Gate	2.4V @ 250µA	150°C (TJ)	1.6Ohm @ 500mA, 10V	0.8nC @ 4.5V	60V	50pF @ 10V	320mA	-	-	-	2N7002
MRF300AN-27MHZ . MRF300AN-27MHZ - RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 28.2dB 300W 3-SIL from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Bulk	Active	LDMOS	NXP USA Inc.	Through Hole	3-SIP	3-SIL	28.2dB	1.8MHz ~ 250MHz	-	-	300W	10µA	50 V	133 V	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S008N-3400 . A5G35S008N-3400 - RF Mosfet 48 V 24 mA 3.3GHz ~ 3.8GHz 18.6dB 27dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		-	Bulk	Active	-	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	18.6dB	3.3GHz ~ 3.8GHz	-	-	27dBm	-	48 V	125 V	24 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G38H045N-3700 . A5G38H045N-3700 - RF Mosfet 5W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	10	1: ¥4,123.384	-	Bulk	Active	-	NXP USA Inc.	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	-	-	-	-	5W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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NXP Semiconductors N.V.- MOSFET模块

MOSFET模块 - 型号列表

增益

额定输出功率

频率

输出电流

供应商器件封装

封装形式

零件状态

技术

安装类型

测试电压

额定电压

包装方式

制造商全称

配置

Vgs(th)（最大）@ Id

工作温度

导通电阻 Rds(on) (最大) @ Id, Vgs

栅极电荷（Qg）（最大）@ Vgs

漏源电压（Vdss）

输入电容（Ciss）（最大）@ Vds

连续漏极电流（Id）@ 25°C