NTE Electronics, Inc.- 双极型晶体管

NTE Electronics, Inc.（NTE电子公司）是一家领先的电子元器件供应商，总部位于美国新泽西州布卢姆菲尔德。公司成立于1979年，长期以来以向工业、商业和消费电子市场提供高品质替换零件及原厂元器件而著称。其核心业务聚焦于广泛电子元器件的采购与分销，尤其擅长为停产或难以寻找的半导体器件提供交叉互换替代方案。产品线涵盖半导体（晶体管、二极管、晶闸管、集成电路）、继电器、电容器、电阻器、热缩管、连接器以及各类工具与配件。代表性产品系列包括NTE/ECG半导体产品线，提供与主要制造商型号对应的等效替换件，以及成熟的RLY系列机电与固态继电器。电容领域，NEH系列铝电解电容和MLR系列陶瓷圆片电容广受欢迎。凭借全面的交叉互换数据库，NTE帮助工程师和技术人员快速定位兼容替代品，减少设备停机时间。虽然并非传统意义上的半导体制造商，NTE在北美售后电子元器件市场占据重要地位，以可靠质量和广泛供应著称。通过授权分销商网络进行销售，其产品触达维修车间、原始设备制造商及电子爱好者。NTE电子持续扩展产品组合以满足行业需求，同时通过维修延长电子设备寿命，践行可持续发展理念。

双极型晶体管 - 型号列表

共 286 个型号

制造商零件编号	库存	价格	晶体管类型	供电电压	额定功率	冷却的封装	直流电流增益 hFE (最小) @ Ic, Vce	集电极电流（Ic）（最大）	最大功耗	结工作温度	海关税号	重量	极性	Vce饱和电压（最大）@ Ib, Ic	主要材料	类型	其他规格	频率	引脚数	过渡频率	工作温度	集电极截止电流（最大）	电流	自然散热热阻	RoHS	元件类型	磁芯材质	漏电流（最大）	漏源电压（Vdss）	极化	封装形式	通道类型	电感量	增益带宽积	电容	测试电流	输入电容值	击穿电压	断态电压	漏极电流（Idss）@ Vds（Vgs=0）	热阻	电流传输比（最大）	放大器类型	截止电压（VGS off）@ Id	材料表面处理	射频系列/标准	发射极-基极电阻（R2）	输出电流1	最小输入电压	最大栅源电压 Vgs	开通延迟时间	关断延迟时间	阈值电压	导通电阻 RDS(On)	连续漏极电流（Id）@ 25°C	标准包装规格
2 NTE222 MOSFET; N-Channel; 25 V (Min.); 30 V; mA; 360 mW @ degC; -65 to ? degC Trans MOSFET N-CH 25V 0.05A 3-Pin TO-72 MOSFET N-CHANNEL DUAL GATE 20V IDSS= 5-35MA TO-72 CASE GATE PROTECTED VHF AMP/MI NTE Electronics	147	1: ¥91.12	-	-	360 mW	3-Pin Metal Case	-	-	-	+175 °C	-	-	-	-	-	-	-	-	-	-	-65 to +175 °C	-	-	-	-	-	-	50 mA	25 V	N-Channel	-	N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE98 Transistor; TO-3; NPN; 500; 8 V; 20 A; 175 W; -65 to 200 degC; 1 degC/W; 0.25 Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 DARLINGTON TRANSISTOR, NPN, 500V, TO-3 T-NPN SI-PWR DARL HV AMP Darlington transistor TO-3 NPN 500 V, NTE98, NTE NTE Electronics	14	1: ¥161.296	:NPN	:500V	-	-	:40	:20A	:175W	-	85331000	0.014	-	-	-	-	-	-	:2	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE179 Transistor; Audio Power; PNP; 40 V; 90 V; 25 A; 5 A; 106 W; 0.8 degC/W; 2 V; TO Trans GP BJT PNP 40V 25A 3-Pin(2+Tab) TO-3 TRANSISTOR PNP GERMANIUM 90V 25 AMP TO-3 CASE AUDIO POWER AMP NTE Electronics	10	1: ¥227.12	PNP	40 V	106 W	TO-3	65 to 300	25 A	-	110 °C	-	-	PNP	0.5 V	Ge	Audio Amplifier, Power	2 V	500 kHz	-	-	-	-	5 A	0.8 °C/W	-	-	-	-	-	-	-	-	-	500 kHz	-	-	-	-	-	-	-	-	Audio Power	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE312 JFET; -6 V; 50; -30 mA; -30 V; 360 mW; 4000; TO-92 Trans JFET N-CH 3-Pin TO-92 JFET, N CHANNEL , -25V, TO-106 JFET N-CHANNEL 30V TO-92 CASE VHF AMP/MIX Junction FET TO-92 N, NTE312, NTE NTE Electronics	20	1: ¥12.24	:JFET	–30 V	360 mW	TO-226AA (TO-92)	-	-	:360mW	-	85331000	0.002	-	-	-	-	-	-	:3	-	:-55°C	-	50 mA	-	-	-	-	:15mA	30 V	N-Channel	:TO-92	N-Channel	4000 umhos	-	1 pF	–1 nA	4.5 pF	:-30V	–6 V	:5mA	-	-	-	:-6V	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
5 NTE2501 Transistor; NPN; TO-126M; NPN; 300 V; 300 V; 5 V; 100 mA; 1.5 W (Collector) Trans GP BJT NPN 300V 0.2A 3-Pin RF TRANSISTOR, NPN, 600mV, 70MHZ TRANSISTOR NPN SILICON 300V IC=0.1A TO-126ML CASE HIGH VOLTAGE VIDEO OUTPUT COMP Transistor TO-126 NPN 300 V 100 mA, NTE2501, NTE NTE Electronics	30	1: ¥10.608	:NPN	:600mV	1.5 W	TO-126ML	:200	:100mA	:1.5W	0 to +150 °C	85412900	0.003	NPN	600 mV	Si	High Voltage	5 V	70 MHz	-	:70MHz	-	-	-	-	RoHS Compliant Part	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:-	-	-	-	-	-	-	-	-	-	-
2 NTE288 Transistor; PNP; Silicon; 300 V (Max.); 300 V (Max.); 5 V (Max.); 500 mA (Max.) Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 TRANSISTOR PNP SILICON 300VC IC-0.5A TO-92 CASE GEERAL PURPOSE AMP COMP'L TO NTE NTE Electronics	10	1: ¥6.324	PNP	300 V	625 mW	TO-92	25	500 mA	-	-55 to +150 °C	-	-	PNP	0.5 V	Si	General Purpose, High Voltage	5 V	50 MHz	-	-	-	0.25 μA	-	83.3 °C/mW	-	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	200 °C/mW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE54 Transistor; NPN; TO-220; 150 V; 150 V; 5 V; 8 A; 50 W; -65 to 150 degC; 40; PNP Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-220 TRANSISTOR - NPN AF POWER AMP TO220 CASE Power transistor TO-220 NPN 150 V, NTE54, NTE NTE Electronics	12	1: ¥20.40	NPN	150 V	2 W	TO-220	40	8 A	50 W	-65 to 150 °C	-	-	NPN	0.5 V	Si	Amplifier, Driver	5 V	30 MHz	-	70	-	0.1 mA	-	2.5 °C/W	-	PNP	Silicon	-	-	-	TO-220	-	-	-	-	-	-	-	-	-	-	40 ...	-	-	-	-	1 V	-	-	-	-	-	-	-	-	-
4 NTE280 Transistor; TO3; NPN; 140 V; 140 V; 5 V; 12 A; 100 W; 150 degC; 140 V (Min.) Trans GP BJT NPN 140V 12A 3-Pin(2+Tab) TO-3 BJT, NPN, 140V, 12A, 2-TO-3 TRANSISTOR NPN SILICON 140V IC=12A TO-3CASE AUDIO POWER OUTPUT COMPLEMENT TO NT NTE Electronics	20	1: ¥39.78	:NPN	:140V	100 W	TO-3	:40	:12A	:100W	150 °C	85412900	0.014	NPN	3 V	Si	Audio Amplifier, Power	5 V	5 MHz	-	:5MHz	:150°C	100 μA	-12 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE214 Transistor; NPN; Darlington; 70 V; 10 A; Plastic TO-3 TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US NTE Electronics	58	1: ¥50.388	-	-	2.5 W	TO-3P	5000	-	-	-	-	-	NPN	0.9 V	Si	Driver, High DC Current Gain	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 A	6 V	-	-	-	-	-	-	-
3 NTE253 Transistor; TO126; NPN; 80; 80; 5 V; 4 A; 40 W; -65 to 150 degC; 3.23 degC/W; Trans Darlington NPN 80V 4A 3-Pin TO-126 DARLINGTON TRANSISTOR, NPN, 80V, TO-126 TRANSISTOR NPN SILICON DARLINGTON 80V IC=4A TO-126 CASE POWER AMP COMP'L TO NTE2 NTE Electronics	110	1: ¥9.928	:NPN	:80V	-	-	:2000	:4A	:40W	-	85412900	0.003	-	-	-	-	-	-	:3	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE332 Transistor; PNP; Silicon; TO-220; 100 V; 100 V; 5 V; 15 A; 5 A; 90 W; 150 degC Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220 BIPOLAR TRANSISTOR, PNP, -100V, TO-220 TRANSISTOR PNP SILICON 100V IC=15A TO-220 CASE COMP'L TO NTE331 NTE Electronics	28	1: ¥20.468	:PNP	:-100V	90 W	TO-220	:40	:-15A	:90W	150 °C	85412100	0.004	PNP	3 V	Si	Audio Amplifier, Power	5 V	3 MHz	:3	:3MHz	-	20 μA @ VCB == 90V, IE == 0	5 A	1.4 °C/W	RoHS Compliant Part	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE457 Transistor; JFET; Silicon N Channel; 310 mW; 125 degC Trans JFET N-CH 25V 3-Pin TO-92 JFET-N-CH GEN PURP AMP/SW Junction FET TO-92 N, NTE457, NTE NTE Electronics	17	17: ¥29.308	N-Channel	–30 V	310 mW	TO-226AA (TO-92)	-	-	-	+125 °C	-	-	N	-	-	-	25	-	-	-	-	-	50 mA	-	-	-	-	15 mA	30 V	N-Channel	TO-92	N-Channel	4000 umhos	-	1 pF	–1 nA	4.5 pF	–30 V	–6 V	1...5 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE251 Transistor; NPN; TO3; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 20 A (Max.) Trans Darlington NPN 100V 20A 3-Pin(2+Tab) TO-3 DARLINGTON TRANSISTOR, NPN, 100V, TO-3 TRANSISTOR NPN SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 NTE Electronics	10	1: ¥56.984	:NPN	:100V	-	-	:18000	:20A	:160W	-	85412100	0.014	-	-	-	-	-	-	:2	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE290A Transistor; PNP; Silicon; 100 V; 80 V; 5 V; 500 mA; 600 mW (Collector); 150 deg Trans GP BJT PNP 80V 0.5A 3-Pin BIPOLAR TRANSISTOR, PNP, -80V TO-92 TRANSISTOR PNP SILICON 100V IC=0.5A TO-92 CASE AUDIO POWER AMP COMP'L TO NTE289A Transistor TO-92 PNP -80 V 500 mA, NTE290A, NTE NTE Electronics	10	3: ¥25.50	:PNP	:-80V	600 mW	TO-92	:200	:-500mA	:600mW	150 °C	85411000	0.00045	PNP	0.25 V	Si	Audio Amplifier, Power	5 V	120 MHz	:3	:120MHz	-	20 μA	-	-	RoHS Compliant Part	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE491 MOSFET; N-Channel; 60 V; 200 mA; 5 Ohms; 350 mW; TO-92 Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 N CHANNEL MOSFET, 60V, 200mA, TO-92 MOSFET-N CHAN ENHANCEMENT NTE Electronics	45	1: ¥4.284	:N Channel	-	350 mW	TO-92	-	-	-	+150 °C	85411000	0.00204	-	-	-	-	-	-	:3	-	-	-	-	-	RoHS Compliant Part	-	-	200 mA	:60V	N-Channel	-	-	320 Micromhos	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:10V	10 ns	10 ns	:3V	:9ohm	:200mA	-
4 NTE392 Transistor; NPN; TO-218; NPN; 100 V; 100 V; 5 V; 25 A; 125 W; -65 to 150 degC; T-NPN SI PWR AMP Transistor TO-218 NPN 100 V 25 A, NTE392, NTE NTE Electronics	10	1: ¥34.816	NPN	100 V	125 W	TO-218	75	25 A	125 W	-65 to 150 °C	-	-	NPN	4 V	Si	Amplifier, Power	5 V	3 MHz	-	3	-	-	-	1 °C/W	-	-	-	-	-	-	TO-218	-	-	-	-	-	-	-	-	-	35.7 °C⁄W	15 ...75	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE55 Transistor; PNP; Silicon; TO220; 150 V; 150 V; 5 V; 8 A; 2 W; -65 to 150 degC Trans GP BJT PNP 150V 8A 3-Pin(3+Tab) TO-220 BIPOLAR TRANSISTOR, PNP, -150V, TO-220 TRANISTOR- PNP 150V 8A TO-220 HI-FREQUENCY DRIVER NTE Electronics	10	1: ¥24.48	:PNP	:-150V	-	-	:40	:-8A	:50W	-	85412100	0.004	-	-	-	-	-	-	:3	:30MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 NTE281 Transistor; PNP; 140 V; 140 V; 5 V; 12 A; 100 muA (Max.); 40; 140; 3 V; 5 MHz Trans GP BJT PNP 140V 12A 3-Pin(2+Tab) TO-3 BJT, NPN, 140V, 12A, TO-3 TRANSISTOR PNP SILICON 140V IC=12A TO-3CASE AUDIO POWER OUTPUT COMPLEMENT TO NT NTE Electronics	19	1: ¥94.41	:PNP	:140V	100 W	TO-3	:40	:12A	:100W	-	85412900	0.014	PNP	3 V	Si	Audio Amplifier, Power	5 V	5 MHz	-	:5MHz	:150°C	100 μA	-12 A	-	RoHS Compliant Part	-	-	-	-	-	-	-	-	5 MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE37 Transistor; PNP; Silicon; TO3P; 160 V; 140 V; 6 V; 12 A; 100 W; 150 degC; NPN Trans GP BJT PNP 140V 15A 3-Pin(3+Tab) TO-3P BIPOLAR TRANSISTOR, PNP, -140V, TO-3P T-PNP SI PWR AMP HI SP SW Power transistor TO-3PJ PNP -140 V, NTE37, NTE NTE Electronics	16	1: ¥39.916	:PNP	:-140V	100 W	TO-3P	:200	:-12A	:100W	150 °C	85361010	0.005	PNP	1.1 V	Si	AF, Amplifier, High Current	6 V	15 MHz	:3	:15MHz	-	0.1 mA	-	-	-	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE123AP-10 Transistor; TO92; NPN; 40; 60; 6 V; 600 mA; 1 W @ 25 degC; -55 to 150 degC; 357 Transistor; TO92; NPN; 40; 60; 6 V; 600mA; 1 W @ 25 degC; -55 to 150 degC; 357 NTE Electronics	10	1: ¥59.976	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1