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Microsemi Corporation

Microsemi Corporation- 场效应晶体管（FET）

Microsemi公司成立于1960年，总部位于美国加利福尼亚州亚利索维耶荷，原是一家专注于航空航天、国防、通信、数据中心和工业应用的半导体与系统解决方案领先供应商。公司于2018年被微芯科技（Microchip Technology）收购，其产品组合涵盖高可靠性现场可编程门阵列（FPGA）、片上系统（SoC）、电源管理和模拟混合信号芯片以及精密时序器件。著名的FPGA系列包括SmartFusion2、IGLOO2和PolarFire，具备低功耗、非易失性和抗辐射等特性。在电源管理领域，Microsemi提供以太网供电（PoE）控制器和集成电路，用于管理和调节网络设备的功率。其模拟与混合信号产品线包含运算放大器、电压调节器和用于瞬时电压保护的瞬态电压抑制（TVS）二极管。该公司是航天和军事系统中抗辐射元器件的主要供应商，提供能承受极端环境的器件。Microsemi的时钟与同步解决方案，如频率转换器和抖动衰减器，广泛应用于高速通信网络。凭借高可靠性、安全性和低功耗的独特组合，Microsemi在关键任务应用中建立了良好声誉。其技术现已成为微芯科技广泛产品组合的一部分，进一步拓展至全球市场。

02
MODELS

场效应晶体管（FET） - 型号列表共 18,908 个型号

Package

Peak Average Forward Current

Peak Forward Voltage

Peak Reverse Repetitive Voltage

Package / Case

Peak Non-Repetitive Surge Current

Maximum Peak Pulse Current

Maximum Clamping Voltage

Maximum Reverse Stand-off Voltage

Minimum Breakdown Voltage

Peak Reverse Current

Supplier Device Package

Maximum Reverse Leakage Current

Test Current

Peak Reverse Recovery Time

Supplier Package

Voltage - Clamping (Max) @ Ipp

Voltage - Breakdown (Min)

Voltage - Reverse Standoff (Typ)

Current - Peak Pulse (10/1000µs)

Operating Temperature

Standard Package Name

Maximum Continuous Forward Current

Peak Reverse Repetitive Voltage

Peak Reverse Current

Peak Forward Voltage

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Other Names

Mounting

Peak Non-Repetitive Surge Current

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Package/Case

Peak Pulse Power Dissipation

Type

Configuration

EU RoHS

Maximum Operating Temperature

Operating Junction Temperature

Peak Reverse Recovery Time

Minimum Operating Temperature

Mounting Type

Thermal Resistance

Operating Temperature - Junction

Speed

Factory Pack Quantity

Diameter

Mounting Style

RoHS

Direction Type

Power - Peak Pulse

制造商零件编号价格/库存PackageConfigurationMountingStandard PackageBrandRoHSOperating TemperatureTypePackage / CasePeak Reverse Repetitive VoltagePeak Average Forward CurrentPeak Reverse CurrentPeak Forward VoltagePeak Non-Repetitive Surge CurrentPackagingFactory Pack QuantityProductMounting TypeSupplier Device PackagerohsDirection TypePeak Pulse Power DissipationMaximum Peak Pulse CurrentMaximum Reverse Leakage CurrentMaximum Clamping VoltageMaximum Reverse Stand-off VoltageMinimum Breakdown VoltageTest CurrentPeak Reverse Recovery TimeSupplier PackageEU RoHSMaximum Operating Temperature Minimum Operating Temperature Pin CountMounting StyleVoltage - Clamping (Max) @ IppVoltage - Breakdown (Min)Voltage - Reverse Standoff (Typ)ApplicationsPower Line ProtectionPower - Peak PulseCurrent - Peak Pulse (10/1000µs)Standard Package NameMaximum Continuous Forward Current Operating Junction Temperature Peak Reverse Repetitive Voltage Peak Reverse Current Peak Non-Repetitive Surge Current Peak Forward Voltage Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfVoltage - DC Reverse (Vr) (Max)Thermal ResistanceOperating Temperature - JunctionCurrent - Average Rectified (Io)Package/CaseSpeedOther NamesDiode TypeRad HardBidirectional ChannelsCapacitance @ Vr, FReverse Recovery Time (trr)Peak Reverse Recovery Time Screening LevelDiameterLengthPackage Diameter PCBPackage Length Lead ShapeOperating Temp RangePackage TypeOperating Temperature ClassificationRad HardenedRectifier TypePeak Non-Repetitive Surge Current (Max)Peak Rep Rev VoltRev CurrRev Recov TimeForward VoltageAvg. Forward Curr (Max)DELETEDMaximum Regulator CurrentMaximum Peak Operating VoltageMaximum Limiting VoltageTermination StyleNumber of Elements per ChipMinimum Breakdown Voltage Maximum Reverse Leakage Current Maximum Clamping Voltage Maximum Reverse Stand-Off Voltage Maximum Peak Pulse Current Test Current Peak Pulse Power Dissipation Unidirectional Channels
JANTX1N6622
2
JANTX1N6622

Diode Switching 660V 1.2A 2-Pin Case A

microsemi

询价2Case ASingleThrough HoleBulkMicrosemiNo-65 to 150 °CSwitching DiodeA, Axial660 V1.2 A0.5 uA1.6@2A V20 ABulk100RectifiersThrough Hole*Contains lead / RoHS non-compliant--------45 nsCase ANot Compliant150-652Through Hole-------Case A1.2-65 to 1506600.5201.6@2A500nA @ 660V1.4V @ 1.2A660V38°C/W Jl-65°C ~ 150°C2AA, AxialFast Recovery = 200mA (Io)1086-2649Standard--10pF @ 10V, 1MHz30ns45Military2.79 mm5.21 mm-----------------------------
1N3209R
1N3209R

Diode 100V 40A 2-Pin DO-5

microsemi

询价2DO-5SingleStudBulkMicrosemiNo-65 to 200 °C--100 V40 A10 uA1.19@90A V800 A--Rectifiers-------------------------------------------------------------------------------
1N3673
1N3673

Diode Switching 1KV 22A 2-Pin DO-4

microsemi

询价2DO-4SingleStudBulkMicrosemiNo-65 to 200 °CSwitching Diode-1000 V22 A10 uA1.2@30A V250 A--Rectifiers-------------------------------------------------------------------------------
1N3893A
1N3893A

Diode Switching 400V 20A 2-Pin DO-4

microsemi

询价2DO-4SingleStudBulkMicrosemiNo-65 to 175 °CSwitching Diode-400 V20 A10 uA1.5@38A V250 A--Rectifiers-----------150 ns-------------------------------------------------------------------
1N4528
1N4528

Diode 800V 40A 2-Pin DO-5

microsemi

询价2DO-5SingleStudBulkMicrosemiNo-65 to 200 °C--800 V40 A10 uA1.19@90A V800 A--Rectifiers-------------------------------------------------------------------------------
1N4723
1N4723

Diode Switching 600V 3A 2-Pin TOP HAT

microsemi

询价2TOP HATSingleThrough HoleBulkMicrosemiNo-65 to 175 °CSwitching Diode-600 V3@Ta=119C A25 uA1 V300 A--Rectifiers------------TOP HATCompliant175-652--------TOP HAT3@Ta=119C-65 to 175600253001-----------------------------------------------
1N5181
1N5181

Diode Switching 4KV 0.1A 2-Pin Case S

microsemi

询价2Case SSingleThrough HoleBulkMicrosemiNo-65 to 175 °CSwitching DiodeS, Axial4000 V0.1@Ta=55C A1000 uA10 V4 ABulk-RectifiersThrough HoleS, AxialContains lead / RoHS non-compliant---------Case SNot Compliant175-652Through Hole--------0.1@Ta=55C-65 to 175400010004105µA @ 4000V10V @ 100mA4000V (4kV)38°C/W Jl-65°C ~ 175°C100mAS, AxialSmall Signal =-StandardYes-------2.8(Max)26(Max)--------------------------
1N5621
1N5621

Diode Switching 800V 1A 2-Pin Case A

microsemi

询价2Case ASingleThrough HoleBulkMicrosemiNo-65 to 175 °CSwitching DiodeA, Axial800 V1@Ta=50C A0.5 uA1.6@3A V30 ABulk-RectifiersThrough Hole*Contains lead / RoHS non-compliant--------300 ns-----Through Hole--------------500nA @ 800V1.6V @ 3A800V38°C/W Jl-65°C ~ 175°C1AA, AxialFast Recovery = 200mA (Io)-StandardYes-20pF @ 12V, 1MHz300ns---------------------------------
1N6162A
1N6162A

Diode TVS Single Bi-Dir 51.7V 1.5KW 2-Pin Case G

microsemi

询价2Case GSingleThrough HoleBulkMicrosemiNo-55 to 175 °CZenerB, Axial-----Bulk100-Through HoleAxialContains lead / RoHS non-compliantBi-Directional1500 W15.4 A5 uA97.1 V51.7 V64.6 V20 mA-------97.1V64.6V51.7VGeneral PurposeNo1500W (1.5kW)15.4A-----------------Yes1-----------------------------------
1N6170A
1N6170A

Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin Case G

microsemi

询价2Case GSingleThrough HoleBulkMicrosemiNo-55 to 175 °CZenerB, Axial-----Bulk100-Through HoleAxialContains lead / RoHS non-compliantBi-Directional1500 W7.3 A5 uA206.3 V114 V142.5 V8 mA-------206.3V142.5V114VGeneral PurposeNo1500W (1.5kW)7.3A-----------------Yes1-----------------------------------
1N643
1N643

Diode Switching 200V 0.4A 2-Pin DO-7

microsemi

询价2DO-7SingleThrough HoleBulkMicrosemiRoHS Compliant-65 to 150 °CSwitching DiodeDO-35200 V0.4 A100 uA1@0.01A V0.5 A-1------------300 ns-----Through Hole-------------------------------------------------------------
90KS200CH1
90KS200CH1

Diode TVS Single Bi-Dir 180V 90KW 2-Pin Case 12

microsemi

询价2Case 12SingleThrough HoleBulkMicrosemiNo-65 to 150 °C-------------Bi-Directional90000 W270 A0.5 uA335 V180 V200 V1 mA--------------------------------------------------------------------
CDLL4150
CDLL4150

Diode Switching 75V 0.3A 2-Pin DO-213AA

microsemi

询价2DO-213AASingleSurface MountBulk---65 to 175 °CSwitching DiodeDO-213AA75 V0.3 A0.1@50V uA1@0.2A V4 ABulk--Surface MountDO-213AAContains lead / RoHS non-compliant--------4 nsDO-213AANot Compliant175-652--------SOD-800.3-65 to 175750.1@50V41@0.2A100nA @ 50V1V @ 200mA75V100°C/W Jl-65°C ~ 175°C300mADO-213AAFast Recovery = 200mA (Io)1086-1257Standard--2.5pF @ 0V, 1MHz4ns4------No Lead-65C to 175CDO-213AAMilitaryNoSwitching Diode4750.1410.3Not Compliant-------------
JAN1N6144AUS
JAN1N6144AUS

Diode TVS Single Bi-Dir 9.1V 1.5KW 2-Pin G-MELF

microsemi

询价2G-MELFSingleSurface MountBulkMicrosemiNo-55 to 175 °C--------100----Bi-Directional1500 W88.8 A20 uA16.9 V9.1 V11.4 V100 mA--------------------------------------------------------------------
JANTX1N5300UR-1
JANTX1N5300UR-1

Diode Current Reg. 100V 1.43mA 2-Pin DO-213AB

microsemi

询价2DO-213ABSingleSurface MountBulkMicrosemiNo--DO-213AB-2-----Bulk100Rectifiers-----------------SMD/SMT------------------------------2.67 mm5.21 mm----------------1.43 mA100 V1.5 VSMD/SMT---------
JANTX1N6148
JANTX1N6148

Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin Case G

microsemi

询价2Case GSingleThrough HoleBulkMicrosemiNo-55 to 175 °C--------100----Bi-Directional1500 W59.8 A10 uA25.1 V13.7 V17.1 V65 mA--------------------------------------------------------------------
JANTX1N6466
JANTX1N6466

Diode TVS Single Uni-Dir 30.5V 500W 2-Pin Case E

microsemi

询价2Case ESingleThrough HoleBulkMicrosemiNo-55 to 175 °CZenerB, Axial-----Bulk100-Through HoleAxialContains lead / RoHS non-compliantUni-Directional500 W63 A3 uA47.5 V30.5 V33 V1 mA-Case ENot Compliant175-552-47.5V33V30.5VGeneral PurposeNo500W63A (8/20µs)Case E--------------1086-2626------Military----------------------133347.530.56315001
JANTX1N6657R
JANTX1N6657R

Diode Switching 100V 15A 3-Pin(3+Tab) TO-254

microsemi

询价3TO-254Dual Common AnodeThrough HoleBulkMicrosemiNo-Switching DiodeTO-254100 V15 A10 uA1.2@20A V150 A--Rectifiers-----------35 ns-------------------------------------------------------------------
JANTXV1N6157A
JANTXV1N6157A

Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin Case G

microsemi

询价2Case GSingleThrough HoleBulkMicrosemiNo-55 to 175 °CZenerG, Axial-----Bulk100-Through HoleC, AxialContains lead / RoHS non-compliantBi-Directional1500 W25.4 A5 uA59.1 V32.7 V40.9 V30 mA-------59.1V40.9V32.7VGeneral PurposeNo1500W (1.5kW)25.4A---------------1086-2971--1-----------------------------------
ICT-18C
ICT-18C

Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin DO-13

microsemi

询价2DO-13SingleThrough HoleBulkMicrosemiNo-65 to 175 °CZenerDO-13-----Bulk100-Through HoleDO-13Contains lead / RoHS non-compliantBi-Directional1500 W50 A2 uA25.5 V18 V21.2 V1 mA-------25.5V21.2V18VGeneral PurposeNo1500W (1.5kW)50A------------------1-----------------------------------
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