芯天下
Microchip Technology Inc.

Microchip Technology Inc.- TVS压敏电阻和MOV

微芯科技公司(Microchip Technology Inc.)成立于1989年,总部位于美国亚利桑那州钱德勒市。公司是全球领先的微控制器、模拟、混合信号和闪存IP解决方案供应商。产品线覆盖8位、16位和32位微控制器(MCU),包括经典的PIC、AVR、SAM系列以及dsPIC数字信号控制器。8位MCU主要包含PIC10、PIC12、PIC16、PIC18等系列,AVR系列提供低功耗高性能的8位和32位MCU,SAM系列基于ARM Cortex-M内核,另有PIC32系列32位MCU和dsPIC33系列数字信号控制器。除了MCU,微芯还提供丰富的模拟产品,如电源管理、线性、混合信号、热管理和射频器件。近年来通过收购增添了PolarFire系列FPGA,进一步完善系统解决方案能力。在全球微控制器市场中,微芯长期占据8位MCU市场首位,整体MCU市场份额位居前列。凭借低功耗、高性能、高集成度和易用性等优势,其产品广泛应用于汽车、工业、消费电子、航空航天、国防及物联网等众多领域。公司以低风险开发、更低系统总成本和快速上市时间著称,并提供卓越的技术支持与可靠的交付质量。

03

TVS压敏电阻和MOV - 型号列表

24,699 个型号

钳位电压

峰值脉冲电流(8/20µs)

击穿电压

最小输入电压

供电电压

峰值脉冲电流(10/1000µs)

输出电流

其他名称

反向漏电流 @ Vr

封装形式

工作温度

供应商器件封装

峰值脉冲功率

标准包装数量

RoHS

安装类型

类型

端口方向

元件数量

位数

制造商零件编号库存价格标准包装数量钳位电压反向漏电流 @ Vr安装类型端口方向工作温度输出电流峰值脉冲功率击穿电压最小输入电压峰值脉冲电流(8/20µs)封装形式配置RoHS制造商全称工厂包装数量类型供电电压电源线保护峰值脉冲电流(10/1000µs)包装方式供应商器件封装应用双向通道数其他名称抗辐射能力元件数量位数单向通道数电容额定电压标准封装名称欧盟RoHS共模瞬态抗扰度(最小)包装数量
1N6162A

Diode TVS Single Bi-Dir 51.7V 1.5KW 2-Pin Case G TVS DIODE 51.7VWM BPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk97.1 V5 uAThrough HoleBi-Directional-55 to 175 °C20 mA1500 W64.6 V51.7 V15.4 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener51.7VNo15.4ABulkAxialGeneral Purpose1-Yes---------
1N6170A

Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin Case G TVS DIODE 114VWM BPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk206.3 V5 uAThrough HoleBi-Directional-55 to 175 °C8 mA1500 W142.5 V114 V7.3 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener114VNo7.3ABulkAxialGeneral Purpose1-Yes---------
90KS200CH1

Diode TVS Single Bi-Dir 180V 90KW 2-Pin Case 12 TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk335 V0.5 uAThrough HoleBi-Directional-65 to 150 °C1 mA90000 W200 V180 V270 A2Case 12SingleNoMicrosemi--------------------
SMDB12CE3

ESD Suppressor TVS 8-Pin SO Tube

Microchip Technology Inc.

-Bulk24 V1 uASurface MountBi-Directional-55 °C----------TVS---------48-95(Typ) pF12 V----
JAN1N6144AUS

Diode TVS Single Bi-Dir 9.1V 1.5KW 2-Pin G-MELF TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥149.6449Bulk16.9 V20 uASurface MountBi-Directional-55 to 175 °C100 mA1500 W11.4 V9.1 V88.8 A2G-MELFSingleNoMicrosemi100-------------------
JANTX1N6148

Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin Case G TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥123.046Bulk25.1 V10 uAThrough HoleBi-Directional-55 to 175 °C65 mA1500 W17.1 V13.7 V59.8 A2Case GSingleNoMicrosemi100-------------------
JANTX1N6466

Diode TVS Single Uni-Dir 30.5V 500W 2-Pin Case E TVS DIODE 30.5VWM BPKG AXIAL TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

4201: ¥86.224Bulk47.5 V3 uAThrough HoleUni-Directional-55 to 175 °C1 mA500 W33 V30.5 V63 A2Case ESingleContains lead / RoHS non-compliantMicrosemi100Zener30.5VNo63A (8/20µs)BulkAxialGeneral Purpose-1086-2626-121--Case ENot CompliantMilitaryCase E
JANTXV1N6157A

Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin Case G TVS DIODE 32.7VWM GPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10500: ¥135.6608Bulk59.1 V5 uAThrough HoleBi-Directional-55 to 175 °C30 mA1500 W40.9 V32.7 V25.4 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener32.7VNo25.4ABulkC, AxialGeneral Purpose11086-2971----------
ICT-18C

Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin DO-13 TVS DIODE 18VWM 25.5VC DO13 TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk25.5 V2 uAThrough HoleBi-Directional-65 to 175 °C1 mA1500 W21.2 V18 V50 A2DO-13SingleContains lead / RoHS non-compliantMicrosemi100Zener18VNo50ABulkDO-13General Purpose1-----------
JAN1N6135A

Diode TVS Single Bi-Dir 121.6V 500W 2-Pin Case E TVS DIODE 121.6VWM BPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk218.4 V1 uAThrough HoleBi-Directional-55 to 175 °C8 mA500 W152 V121.6 V2.3 A2Case ESingleContains lead / RoHS non-compliantMicrosemi100Zener121.6VNo2.3ABulkAxialGeneral Purpose11086-2225----------
JAN1N6140A

Diode TVS Single Bi-Dir 6.2V 1.5KW 2-Pin Case G TVS DIODE 6.2VWM CPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥154.1478Bulk12.1 V100 uAThrough HoleBi-Directional-55 to 175 °C150 mA1500 W7.79 V6.2 V124 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener6.2VNo124ABulkC, AxialGeneral Purpose11086-2232----------
JAN1N6141

Diode TVS Single Bi-Dir 6.9V 1.5KW 2-Pin Case G TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk13.4 V100 uAThrough HoleBi-Directional-55 to 175 °C150 mA1500 W8.65 V6.9 V111.9 A2Case GSingleNoMicrosemi100-------------------
JAN1N6169A

Diode TVS Single Bi-Dir 98.8V 1.5KW 2-Pin Case G TVS DIODE 98.8VWM CPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥130.167Bulk178.8 V5 uAThrough HoleBi-Directional-55 to 175 °C10 mA1500 W123.5 V98.8 V8.4 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener98.8VNo8.4ABulkC, AxialGeneral Purpose11086-2261----------
JAN1N6467US

Diode TVS Single Uni-Dir 40.3V 500W 2-Pin E-MELF TVS DIODE 40.3VWM BSQMELF TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥98.6462Bulk63.5 V2 uASurface MountUni-Directional-55 to 175 °C1 mA500 W43.7 V40.3 V45 A2E-MELFSingleContains lead / RoHS non-compliantMicrosemi100Zener40.3VNo45A (8/20µs)BulkB, SQ-MELFGeneral Purpose-1086-2279---1------
JANTX1N6127A

Diode TVS Single Bi-Dir 56V 500W 2-Pin Case E TVS DIODE 56VWM BPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥112.7834Bulk103.1 V1 uAThrough HoleBi-Directional-55 to 175 °C20 mA500 W71.3 V56 V4.8 A2Case ESingleContains lead / RoHS non-compliantMicrosemi100Zener56VNo4.8ABulkAxialGeneral Purpose11086-2561----------
JANTX1N6155US

Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin G-MELF TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Trays49.9 V5 uASurface MountBi-Directional-55 to 125 °C30 mA1500 W34.2 V27.4 V30.1 A2G-MELFSingleNoMicrosemi100-------------------
JANTX1N6160

Diode TVS Single Bi-Dir 42.6V 1.5KW 2-Pin Case G TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥133.9369Bulk77 V5 uAThrough HoleBi-Directional-55 to 175 °C20 mA1500 W53.2 V42.6 V19.5 A2Case GSingleNoMicrosemi100-------------------
JANTXV1N5659A

Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin DO-13

Microchip Technology Inc.

-Bulk165 V5 uAThrough HoleUni-Directional-65 to 175 °C1 mA1500 W114 V102 V9.1 A2DO-13Single----------------------
JANTXV1N6108A

Diode TVS Single Bi-Dir 9.1V 500W 2-Pin Case E TVS DIODE 9.1VWM BPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

-Bulk16.9 V20 uAThrough HoleBi-Directional-55 to 175 °C100 mA500 W11.4 V9.1 V29.6 A2Case ESingleContains lead / RoHS non-compliantMicrosemi100Zener9.1VNo29.6ABulkAxialGeneral Purpose11086-2872----------
JANTXV1N6158A

Diode TVS Single Bi-Dir 35.8V 1.5KW 2-Pin Case G TVS DIODE 35.8VWM GPKG AXIAL TVS Diodes / ESD Suppressors Transient Voltage Suppressor

Microchip Technology Inc.

10100: ¥160.6405Bulk64.6 V5 uAThrough HoleBi-Directional-55 to 175 °C25 mA1500 W44.7 V35.8 V23.2 A2Case GSingleContains lead / RoHS non-compliantMicrosemi100Zener35.8VNo23.2ABulkC, AxialGeneral Purpose11086-2972----------
1 / 50
1