芯天下
Microchip Technology Inc.

Microchip Technology Inc.- MOSFET模块

微芯科技公司(Microchip Technology Inc.)成立于1989年,总部位于美国亚利桑那州钱德勒市。公司是全球领先的微控制器、模拟、混合信号和闪存IP解决方案供应商。产品线覆盖8位、16位和32位微控制器(MCU),包括经典的PIC、AVR、SAM系列以及dsPIC数字信号控制器。8位MCU主要包含PIC10、PIC12、PIC16、PIC18等系列,AVR系列提供低功耗高性能的8位和32位MCU,SAM系列基于ARM Cortex-M内核,另有PIC32系列32位MCU和dsPIC33系列数字信号控制器。除了MCU,微芯还提供丰富的模拟产品,如电源管理、线性、混合信号、热管理和射频器件。近年来通过收购增添了PolarFire系列FPGA,进一步完善系统解决方案能力。在全球微控制器市场中,微芯长期占据8位MCU市场首位,整体MCU市场份额位居前列。凭借低功耗、高性能、高集成度和易用性等优势,其产品广泛应用于汽车、工业、消费电子、航空航天、国防及物联网等众多领域。公司以低风险开发、更低系统总成本和快速上市时间著称,并提供卓越的技术支持与可靠的交付质量。

03

MOSFET模块 - 型号列表

130 个型号

最大功率

连续漏极电流(Id)@ 25°C

供应商器件封装

导通电阻 Rds(on) (最大) @ Id, Vgs

栅极电荷(Qg)(最大)@ Vgs

输入电容(Ciss)(最大)@ Vds

封装形式

标准包装数量

漏源电压(Vdss)

配置

Vgs(th)(最大)@ Id

包装方式

安装类型

工作温度

其他名称

最大功耗

漏极电流(Idss)@ Vds(Vgs=0)

RoHS

FET类型

FET特性

输入端

集电极-发射极饱和电压(最大)@ Vge, Ic

位数

下降时间

最大栅源电压 Vgs

栅极电荷

额定功率

上升时间(典型)

首抽头延迟

导通电阻 RDS(On)

电流传输比(最小)

峰值脉冲电流(10/1000µs)

宽度

长度

尺寸/外形

制造商零件编号库存价格RoHS制造商全称标准包装数量最大功率安装类型封装形式供应商器件封装集电极-发射极饱和电压(最大)@ Vge, Ic配置FET类型FET特性Vgs(th)(最大)@ Id导通电阻 Rds(on) (最大) @ Id, Vgs栅极电荷(Qg)(最大)@ Vgs漏源电压(Vdss)输入电容(Ciss)(最大)@ Vds连续漏极电流(Id)@ 25°C包装方式输入端IGBT类型NTC热敏电阻供电电压集电极电流(Ic)(最大)输入电容 (Cies) @ Vce集电极截止电流(最大)工作温度位数最小起订量单位包装其他名称SVHC海关税号下降时间最大栅源电压 Vgs栅极电荷额定功率上升时间(典型)晶体管类型首抽头延迟阈值电压导通电阻 RDS(On)最大功耗电流传输比(最小)漏极电流(Idss)@ Vds(Vgs=0)重量安装样式引脚数材料表面处理元件数量击穿电压导通电阻(最大)开关时间(Ton, Toff)(最大)峰值脉冲电流(10/1000µs)宽度高度长度冷却的封装尺寸/外形通道类型卡标准射频系列/标准技术
APT58F50J

POWER FREDFET - MOS8 MOSFET N-CH 500V 58A SOT-227 Discrete Semiconductor Modules Power FREDFET - MOS8

Microchip Technology Inc.

-RoHS CompliantMicrosemi10540WChassis MountSOT-227-4, miniBLOCISOTOP®--MOSFET N-Channel, Metal OxideStandard5V @ 2.5mA65 mOhm @ 42A, 10V340nC @ 10V500V13500pF @ 25V58ATube--------------------------------------------
APTC60AM242G

POWER MODULE - COOLMOS MOSFET N CH 600V 95A SP2 Discrete Semiconductor Modules Power Module - Coolmos

Microchip Technology Inc.

-RoHS CompliantMicrosemi1462WChassis MountModule*--2 N-Channel (Half Bridge)Standard3.9V @ 5mA24 mOhm @ 47.5A, 10V300nC @ 10V600V14400pF @ 25V95ABulk--------------------------------------------
APTCV60HM45BC20T3G

POWER MODULE - COOLMOS POWER MOD IGBT3 FULL BRIDGE SP3 Discrete Semiconductor Modules Power Module - Coolmos

Microchip Technology Inc.

-RoHS CompliantMicrosemi1250WChassis MountSP3SP31.9V @ 15V, 50ABoost Chopper, Full Bridge---------StandardTrench and Field StopYes600V50A3.15nF @ 25V250µA-------------------------------------
APTCV60HM45BT3G

POWER MODULE - COOLMOS POWER MOD IGBT3 FULL BRIDGE SP3 Discrete Semiconductor Modules Power Module - Coolmos

Microchip Technology Inc.

-RoHS CompliantMicrosemi1250WChassis MountSP3SP31.9V @ 15V, 50ABoost Chopper, Full Bridge---------StandardTrench and Field StopYes600V50A3.15nF @ 25V250µA-------------------------------------
APTCV60HM45RT3G

Power Module 18-Pin Case SP-3 POWER MOD IGBT3 FULL BRIDGE SP3 Discrete Semiconductor Modules Power Module - Coolmos

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiBulk250WScrew18Case SP-3SP31.9V @ 15V, 50AFull Bridge Inverter---------Single Phase Bridge RectifierTrench and Field StopYes600V50A3.15nF @ 25V250µA-40 to 175 °C18---------------------------------APTCV60HM45RT3G-
APTCV60HM45RCT3G

POWER MODULE - COOLMOS POWER MOD IGBT3 FULL BRIDGE SP3 Discrete Semiconductor Modules Power Module - Coolmos

Microchip Technology Inc.

-RoHS CompliantMicrosemi1250WChassis MountSP3SP31.9V @ 15V, 50AFull Bridge Inverter---------Single Phase Bridge RectifierTrench and Field StopYes600V50A3.15nF @ 25V250µA-------------------------------------
MCP87130T-U/LC
3

. MCP87130T-U/LC - N-Channel 25 V 43A (Tc) 1.7W (Ta) Surface Mount 8-PDFN (3.3x3.3) from Microchip Technology. from now!

Microchip Technology Inc.

330001: ¥2.652Lead free / RoHS Compliant-3,3001.8WSurface Mount8-PowerTDFN8-PDFN (3x3)25 VSingle Triple SourceMOSFET N-Channel, Metal OxideLogic Level Gate1.7V @ 250µA13.5 mOhm @ 10A, 10V8nC @ 4.5V25V400pF @ 12.5V42A (Tc)Tape & Reel (TR)-------- 55 C-33003300MCP87130T-U/LCCT:No SVHC (16-Dec-2013)854129002.1 ns:3.3V5.5 nC1.8 W5.4 nsN-Channel4.2 ns:1.35V:0.0173ohm:1.8W40 S42 A0.10472SMD/SMT:8:MSL 1 - Unlimited--------------
MCP87090T-U/LC
4

. MCP87090T-U/LC - N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) from Microchip Technology. from now!

Microchip Technology Inc.

330001: ¥3.196Lead free / RoHS Compliant-3,3002.2W, 1.8WSurface Mount8-PowerTDFN8-PDFN (3x3)25 VQuad Drain, Triple SourceMOSFET N-Channel, Metal OxideLogic Level Gate1.7V @ 250µA10.5 mOhm @ 10V10nC @ 4.5V25V580pF @ 12.5V48A (Tc)Tape & Reel (TR)-------+150 °C833003300MCP87090T-U/LCCT:No SVHC (16-Dec-2013)854129002.9 ns10 V, -8 V7.5 nC1.8 W9.3 nsN-Channel5.3 ns:1.35V:0.01ohm1.8 W62 S48 A0.10472SMD/SMT:8:MSL 1 - Unlimited125 V12 mΩ2.5 ns48 A3.3mm1mm3.3mmPDFN3.3 x 3.3 x 1mmEnhancementPower MOSFET--
MCP87090T-U/MF
5

. MCP87090T-U/MF - N-Channel 25 V 64A (Tc) 2.2W (Ta) Surface Mount 8-PDFN (5x6) from Microchip Technology. from now!

Microchip Technology Inc.

330001: ¥3.40Lead free / RoHS Compliant-3,3002.2WSurface Mount8-PowerTDFN8-PDFN (5x6)25 VQuad Drain, Triple SourceMOSFET N-Channel, Metal OxideLogic Level Gate1.7V @ 250µA10.5 mOhm @ 10V10nC @ 4.5V25V580pF @ 12.5V64A (Tc)Tape & Reel (TR)-------+150 °C833003300MCP87090T-U/MFCT:No SVHC (16-Dec-2013)854129002.9 ns10 V, -8 V7.5 nC2.2 W9.3 nsN-Channel5.3 ns:1.35V:0.01ohm2.2 W62 S64 A0.10472SMD/SMT:8:MSL 1 - Unlimited125 V12 mΩ2.5 ns64 A6mm1mm5mmPDFN5 x 6 x 1mmEnhancementPower MOSFET--
APT12057JLL

MOSFET N-CH 1200V 19A SOT227 MOSFET Power MOSFET - MOS7

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemi1520WChassis MountSOT-227-4, miniBLOCSOT-227--MOSFET N-Channel, Metal OxideStandard5V @ 2.5mA570 mOhm @ 10A, 10V290nC @ 10V1200V (1.2kV)6200pF @ 25V19A (Tc)Bulk-------------------------------------------Si
APT50MC120JCU2

1200 V 34 mOhm 179 nC Boost chopper SiC MOSFET Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120AM08CD3AG

xxx Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120AM20CT1AG

Phase leg 1200V 17mOhm 360nC Power Module MOSFET-SP-1 Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120HR11CT3G

Phase leg 1200V 98mOhm 49nC Dual Common Emitter Power Module MOSFET Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120HRM40CT3G

Phase leg 1200V 34mOhm 179nC Dual Common Emitter Power Module MOSFET Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC60TLM14CAG

Three level inverter 1200V 13mOhm SiC Power Module MOSFET Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC60TLM55CT3AG

250 W 49 mOhm 98 nC Power Module Mosfet Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120AM55CT1AG

MOSFET 2N-CH 1200V 55A SP1 Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 105A SP3F Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
APTMC120AM16CD3AG

MOSFET 2N-CH 1200V 131A D3 Discrete Semiconductor Modules Power Module - SiC

Microchip Technology Inc.

-RoHS CompliantMicrosemi------------------------------------------------------------
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