M/A-COM Technology Solutions Holdings, Inc.- IGBT

M/A-COM Technology Solutions Holdings, Inc.（简称MACOM）是全球领先的高性能模拟射频、微波和毫米波半导体产品供应商。公司创立于1950年（前身为Microwave Associates），总部位于美国马萨诸塞州洛厄尔。MACOM的产品广泛应用于高速光纤、卫星、雷达、有线及无线网络、有线电视、汽车、工业、医疗和移动设备等多个市场。作为半导体行业的支柱企业，MACOM拥有超过60年的深厚行业经验，是客户从射频到光应用领域的真正合作伙伴。公司提供丰富的标准与定制产品组合，包括器件、集成电路、组件、模块和子系统，覆盖38条产品线、超过3000种产品。重点产品系列涵盖砷化镓和氮化镓基功率放大器、低噪声放大器、混频器、射频开关、二极管，以及光通信用跨阻放大器和时钟数据恢复芯片等。MACOM在射频和微波领域具有卓越的技术实力，被公认为高性能模拟半导体的核心厂商。其业务遍及全球，在北美、欧洲、亚洲和澳大利亚设有研发中心、晶圆制造、封装测试和运营设施。公司已通过ISO9001国际质量管理体系和ISO14001环境管理体系认证，并通过直销、授权代表和主要分销商组成的销售网络服务全球客户。凭借持续创新和可靠品质，MACOM在通信基础设施、航空航天与国防等关键市场保持着稳固的行业地位。

IGBT - 型号列表

共 97 个型号

制造商零件编号	库存	价格	标准包装数量	工作温度	最大栅源电压 Vgs	通道类型	击穿电压	峰值脉冲电流（10/1000µs）	安装类型	封装形式	技术	制造商全称	其他名称	RoHS	增益	频率	额定输出功率	测试电压	额定电压	晶体管类型	输出电流	最大额定电流	包装方式	供应商器件封装	工厂包装数量	输出功率	平均正向功率	集电极-发射极饱和电压（最大）@ Vge, Ic	安装样式	配置	漏极电流（Idss）@ Vds（Vgs=0）	连续漏极电流（Id）@ 25°C	噪声系数	抗辐射加固	最大频率	元件数量	导通电阻 Rds(on) (最大) @ Id, Vgs	导通电阻（最大）	共模瞬态抗扰度（最小）	位数	额定功率	栅极触发电压 Vgt (最大)	类型	产品子类型	输出1频率	最大功耗	漏源电压（Vdss）	输入电容值	系列
UF2840P Trans MOSFET N-CH 65V 4A 5-Pin Transistors RF MOSFET Trans RF MOSFET N-CH 65V 4A 5-Pin RF MOSFET Transistors m/a-com technology solutions	10	42: ¥483.956	Bulk	-55 to 200 °C	20 V	Enhancement	65 V	4 A	Screw	-	Si	MACOM	-	-	-	-	-	-	-	-	-	-	-	-	25	-	-	-	-	-	4 A	-	-	No	500 MHz	2	10(Min) dB	50(Min) %	Military	5	-	-	-	-	100 MHz	116000 mW	65 V	-	-
2 MRF137 RF FET HI PWR SOE FLANGE FET RF N-CH 400MHZ 28V 211-07 Trans RF MOSFET N-CH 65V 5A 4-Pin Case 211-07 RF MOSFET Transistors 5-400MHz 30Watts 28Volt Gain 13dB m/a-com technology solutions	96	1: ¥204.068	Bulk	-65 to 200 °C	±40 V	Enhancement	65 V	5 A	Screw	4Case 211-07	Si	MACOM	1465-1148	Lead free / RoHS Compliant	7.7dB ~ 16dB	150MHz ~ 400MHz	30W	28VDC	65V	N-Channel	25mA	5A	*	*	20	30 W	100 W	65 V	SMD/SMT	Single	-	5 A	1.5dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UF2840G Trans MOSFET N-CH 65V 4A 5-Pin MOSFET,40W,28V,100-500MHZ Transistors RF MOSFET 100-500MHz 40Watts 28Volt Gain 10dB Trans RF MOSFET N-CH 65V 4A 5-Pin RF MOSFET Transistors 100-500MHz 40Watts 28Volt Gain 10dB m/a-com technology solutions	10	1: ¥998.716	Trays	-55 to 200 °C	20 V	Enhancement	65 V	4 A	Screw	*	Si	MACOM	1465-1212	Lead free / RoHS Compliant	10dB	100MHz ~ 500MHz	40W	28V	65V	N-Channel	500mA	1mA	*	*	25	40 W	116 W	65 V	SMD/SMT	Single	4 A	-	-	No	500 MHz	2	10(Min) dB	50(Min) %	Military	5	116 W	20 V	RF Power MOSFET	-	100 MHz	116000 mW	65 V	-	-
DU1215S Trans MOSFET N-CH 40V 4A 4-Pin Transistors RF MOSFET RF MOSFET Transistors m/a-com technology solutions	40	1: ¥319.056	Bulk	-55 to 200 °C	20 V	Enhancement	40 V	4 A	Screw	-	Si	MACOM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FM-105-PIN Plug-In Frequency Doubler 8-Pin RH-3 Transistors RF MOSFET m/a-com technology solutions	10	10: ¥3,255.16	Bulk	-55 to 85 °C	-	-	-	-	-	8RH-3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Plug-In Frequency Doublers	-	-	-	-	-
3 MRF148A Trans MOSFET N-CH 120V 6A 4-Pin Case 211-07 FET RF N-CH 50V 30W 211-07 Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07 RF MOSFET Transistors 5-175MHz 30Watts 50Volt Gain 18dB m/a-com technology solutions	128	1: ¥258.06	Bulk	-65C to 200C	+/- 40 V	N	-	-	Screw	*	Si	MACOM	1465-1151	Lead free / RoHS Compliant	15dB ~ 18dB	30MHz ~ 175MHz	30W	50V	120V	N-Channel	100mA	6A	*	*	20	30 W	115 W	125 V	SMD/SMT	Single	6 A	6 A	-	No	175 MHz	1	18 dB	50 %	Military	4	-	-	-	-	-	-	-	3@50V pF	-
MRF176GU Trans MOSFET N-CH 125V 16A 5-Pin Case 375-04 FET RF 2N-CH 50V 100MA 375-04 m/a-com technology solutions	10	1: ¥871.964	Bulk	-65 to 200 °C	±40 V	Enhancement	125 V	16 A	Screw	5Case 375-04	-	-	1465-1170	Lead free / RoHS Compliant	17dB	225MHz	200W	50V	125V	2 N-Channel (Dual) Common Source	100mA	16A	*	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DU2840V TRANSISTOR,MOSFET,RF,40W,28V,2-175_MHZ Transistors RF MOSFET RF MOSFET Transistors m/a-com technology solutions	10	23: ¥488.58	-	-	-	-	-	-	-	-	Si	MACOM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FM-106-PIN Broadband Frequency Doubler 8-Pin FP-2 Transistors RF MOSFET m/a-com technology solutions	10	19: ¥665.992	Bulk	-55 to 85 °C	-	-	-	-	-	8FP-2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Broadband Frequency Doublers	-	-	-	-	-
UF2805B Trans MOSFET N-CH 65V 1.4A 6-Pin m/a-com technology solutions	-		Bulk	-55 to 200 °C	20 V	Enhancement	65 V	1.4 A	Screw	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MRF136Y Trans MOSFET N-CH 65V 5A 2-Pin Case 319B-02 MOSFET N-CH 30W 400MHZ 319B-02 Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 m/a-com technology solutions	10	1: ¥404.60	Bulk	N/A to 200 °C	±40 V	Enhancement	65 V	5 A	-	2Case 319B-02	-	-	1465-1147	Lead free / RoHS Compliant	14dB	400MHz	30W	28VDC	65V	N-Channel	25mA	5A	*	*	-	-	-	-	-	-	-	-	1dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DU2805S Trans MOSFET N-CH 65V 1.4A 4-Pin m/a-com technology solutions	-		Bulk	-55 to 200 °C	20 V	Enhancement	65 V	1.4 A	Screw	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
LF2802A Trans MOSFET N-CH 65V 0.7A 3-Pin m/a-com technology solutions	-		Bulk	-55 to 200 °C	20 V	Enhancement	65 V	0.7 A	Screw	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MRF151 Trans MOSFET N-CH 125V 16A 4-Pin FET RF N-CH 150W 50V 175MHZ RF MOSFET Transistors 5-175MHz 150Watts 50Volt Gain 18dB m/a-com technology solutions	91	1: ¥367.608	Bulk	N/A to 200 °C	±40 V	Enhancement	125 V	16 A	Screw	*	Si	MACOM	1465-1153	Lead free / RoHS Compliant	13dB ~ 22dB	30MHz ~ 175MHz	150W	50V	125V	N-Channel	250mA	16A	*	*	20	150 W	300 W	125 V	SMD/SMT	Single	-	16 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MRF174 Trans MOSFET N-CH 65V 13A 4-Pin Case 211-11 FET RF N-CH 28V 2A 211-11 Trans RF MOSFET N-CH 65V 13A 4-Pin Case 211-11 m/a-com technology solutions	144	1: ¥352.104	Bulk	-65 to 200 °C	±40 V	Enhancement	65 V	13 A	Screw	4Case 211-11	-	-	1465-1166	Lead free / RoHS Compliant	11.8dB	150MHz	125W	28V	65V	NPN	2A	13A	*	*	-	-	-	-	-	-	-	-	3dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*
UF28100H Trans MOSFET N-CH 65V 12A 5-Pin MOSFET,100W,28V,100-500MHZ Transistors RF MOSFET RF MOSFET Transistors m/a-com technology solutions	10	10: ¥1,558.424	Bulk	-55 to 200 °C	20 V	Enhancement	65 V	12 A	Screw	*	Si	MACOM	1465-1209	Lead free / RoHS Compliant	10dB	100MHz ~ 500MHz	100W	28V	65V	N-Channel	600mA	12A	*	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UF28150J Trans MOSFET N-CH 60V 28A 5-Pin MOSFET,150W,28V,100-500MHZ Transistors RF MOSFET 100-500MHz 150Watts 28Volt Gain 8dB RF MOSFET Transistors 100-500MHz 150Watts 28Volt Gain 8dB m/a-com technology solutions	10	1: ¥2,144.176	Bulk	-65 to 200 °C	20 V	Enhancement	60 V	28 A	Screw	*	Si	MACOM	1465-1210	Lead free / RoHS Compliant	8dB	100MHz ~ 500MHz	150W	28V	65V	2 N-Channel (Dual)	400mA	16A	*	*	10	150 W	389 W	65 V	SMD/SMT	Dual	16 A	16 A	-	-	-	-	-	-	-	-	389 W	+/- 20 V	RF Power MOSFET	-	-	-	-	-	-
DU2810S Trans MOSFET N-CH 65V 2.8A 4-Pin m/a-com technology solutions	-		Bulk	-65 to 200 °C	20 V	Enhancement	65 V	2.8 A	Screw	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
H-81-4-N Two-Way Power Divider 3-Pin Case C-19 Transistors RF MOSFET m/a-com technology solutions	10	10: ¥4,434.62	Bulk	-	-	-	-	-	-	3Case C-19	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Two-Way Power Dividers	-	-	-	-	-
2 MRF134 Trans MOSFET N-CH 65V 0.9A 4-Pin Case 211-07 TRANS N-CH 5W 400MHZ 211-07 Transistors RF MOSFET 5-400MHz 5 Watts 28Volt Gain 11dB Trans RF MOSFET N-CH 65V 0.9A 4-Pin Case 211-07 RF MOSFET Transistors 5-400MHz 5 Watts 28Volt Gain 11dB m/a-com technology solutions	47	1: ¥214.064	Bulk	-65 to 150 °C	±40 V	Enhancement	65 V	0.9 A	Screw	4Case 211-07	Si	MACOM	1465-1145	Lead free / RoHS Compliant	10.6dB ~ 14dB	400MHz	5W	28V	65V	N-Channel	50mA	900mA	*	*	20	5 W	17.5 W	65 V	SMD/SMT	Single	0.9 A	900 mA	2dB	-	-	-	-	-	-	-	17.5 W	+/- 40 V	RF Power MOSFET	-	-	-	-	-	-

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M/A-COM Technology Solutions Holdings, Inc.- IGBT

IGBT - 型号列表

峰值脉冲电流（10/1000µs）

其他名称

增益

输出电流

封装形式

额定输出功率

最大额定电流

工作温度

频率

平均正向功率

击穿电压

漏极电流（Idss）@ Vds（Vgs=0）

噪声系数

输出功率

晶体管类型

连续漏极电流（Id）@ 25°C

工厂包装数量

最大栅源电压 Vgs

测试电压

额定电压

额定功率

栅极触发电压 Vgt (最大)

产品子类型

标准包装数量

最大频率

元件数量

导通电阻 Rds(on) (最大) @ Id, Vgs

导通电阻（最大）

位数

通道类型

集电极-发射极饱和电压（最大）@ Vge, Ic

配置