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Honeywell International Inc.

Honeywell International Inc.- 光电断续器

霍尼韦尔国际公司(Honeywell International Inc.)是一家成立于1885年的跨国多元化高科技制造企业,总部位于美国北卡罗来纳州夏洛特市。1999年,原联信公司(AlliedSignal)与原霍尼韦尔公司合并,形成如今的霍尼韦尔。公司是《财富》500强企业及道琼斯工业平均指数的成分股,在纳斯达克上市,股票代码为HON。霍尼韦尔业务涵盖航空航天、建筑科技、高性能材料技术以及安全与生产力解决方案四大板块,在全球超过100个国家和地区运营。在电子元器件领域,霍尼韦尔是全球领先的传感与物联网解决方案提供商,专注于高性能传感器和开关的研发与生产。核心产品系列包括Data Instruments品牌下的压力传感器、称重传感器,以及线性/旋转电位计位置传感器、硅压力传感器、温度传感器、气体传感器、湿度传感器和磁传感器等。公司还提供微机电系统(MEMS)、热式流量传感器等先进传感技术,广泛应用于工业自动化、汽车、医疗器械和消费电子等领域。霍尼韦尔传感器以高精度、高可靠性和坚固耐用著称,在恶劣环境下具有显著优势。凭借百年技术积累,霍尼韦尔在全球工业传感器市场占据重要地位,尤其在压力和温度传感器细分市场拥有领先份额。公司正大力推动智能传感与物联网融合,每天有数以百万计的霍尼韦尔传感器在全球运行,赋能工业4.0和智慧楼宇。

02
MODELS

光电断续器 - 型号列表320 个型号

Maximum Light Current

Light Current Minimum

Package/Case

Package Style

Viewing Angle

Current,Light

Dimensions

Light Current Maximum

Current - Collector (Ic) (Max)

Half Intensity Angle Degrees

Package

Package / Case

Standard Package Name

Supplier Package

AngularResponse

PackageType

Angular Response (Degree)

长度

尺寸

Matchcode

Maximum Power Dissipation

Maximum Power Dissipation

Power Dissipation

Lead Time

Operating Temperature

Power - Max

典型上升时间

典型下降时间

Package Type

Standard Leadtime

Sens.range min

Dark current

Sens.range max.

Fall Time

Rise Time

Series Name

Subcategory

Wavelength

PowerDissipation

Comment

Mounting Type

最大光电流

高度

宽度

封装类型

Packaging

Light Current

Maximum Operating Temperature

Type

Maximum Rise Time

Maximum Fall Time

Operating Temperature Range

Package Components

Rise and Fall Time

Diameter,Lead

Length,Lead

Time,Fall

Time,Rise

Product Category

半感光角度

封装/外壳

Photoelectric current min

Photoelectric current

Photoelectric current max

Unit Pack

Detection angle

Rise/Fall time

电流 - 集电极 (Ic)(最大值)

RoHS

Collector- Emitter Voltage VCEO Max

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Minimum Operating Temperature

Product

Maximum Operating Temperature

Maximum Collector Emitter Saturation Voltage

Maximum Collector Emitter Voltage

Maximum Dark Current

Minimum Operating Temperature

Phototransistor Type

Pin Count

Lead Shape

Dark Current

Product Type

Standard Package

Response Time

Current,Dark

Temperature,Operating,Maximum

Temperature,Operating,Minimum

Voltage,Breakdown,CollectortoEmitter

Voltage,Saturation,CollectortoEmitter

Current - Dark (Id) (Max)

Orientation

Voltage - Collector Emitter Breakdown (Max)

Maximum Dark Current

安装类型

针数目

最大暗电流

Package Color

Light Current Slope

Reverse Current

视角

功率 - 最大值

Transmission angle

Wavelength of max photosensitivity

Series

Collector current

Lens Color

直径

检测到的最大波长

Output Device

Slot Width

Aperture Width

MOQ

Sensing Distance

Output Configuration

Collector-Emitter Voltage

Half-Intensity Angle

Dark Current (Max)

Lens Type

Collector-Emitter Sat Volt (max)

Output Rise Time

Output Fall Time

Reverse Breakdown Voltage

Hermetic Style

制造商零件编号价格/库存RoHSFall TimeMaximum Operating TemperatureMinimum Operating TemperatureRise TimePower DissipationSubcategoryLead TimeStandard PackagePackage/CaserohsCollector- Emitter Voltage VCEO MaxTypeSeries NameOperating Temperature RangePackage ComponentsProduct TypeMaximum Power DissipationPackage / CaseCollector-Emitter Breakdown VoltageCollector-Emitter Saturation VoltageProductEmitter-Collector Breakdown VoltagePackage StyleDark CurrentRise and Fall TimeLight Current MinimumViewing AngleMounting TypePolarityStandard Package NameEU RoHSSupplier PackagePin CountWavelengthVoltage - Collector Emitter Breakdown (Max)Maximum Operating Temperature Maximum Collector Emitter Saturation Voltage Maximum Rise Time Maximum Collector Emitter Voltage Number of Channels per ChipMaximum Fall Time Maximum Dark Current Maximum Power Dissipation Minimum Operating Temperature Phototransistor TypeHalf Intensity Angle Degrees Product CategoryCurrent - Dark (Id) (Max)OrientationPower - MaxMaximum Light Current Maximum Emitter Collector Voltage Operating TemperatureLead ShapeCommentAngular Response (Degree)Current,LightDimensionsTime,RiseAngularResponseCurrent,DarkLength,LeadPackageTypePowerDissipationTemperature,Operating,MaximumTemperature,Operating,MinimumTime,FallTransistorPolarityVoltage,Breakdown,CollectortoEmitterVoltage,Saturation,CollectortoEmitterCurrent - Collector (Ic) (Max)SeriesDiameter,LeadPackage ColorLight Current MaximumPackage TypePackagePackagingAutomotive典型上升时间安装类型针数目典型下降时间长度尺寸Peak Wavelength MatchcodeUnit PackStandard LeadtimeMOQDetection angleRise/Fall timeSMD/THTDark current最大光电流半感光角度封装类型最大暗电流Sens.range minSens.range max.Response TimeMaximum Dark Current高度宽度Reverse Current视角取向电流 - 暗 (Id)(最大值)封装/外壳装配类型功率 - 最大值波长电压 - 集射极击穿(最大值)Collector-emitter voltageCase colourTransmission angleWavelength of max photosensitivityLens ColorCollector-Emitter VoltageEmitter-Collector Voltage (Max)Half-Intensity AngleMountingOperating Temp RangePeak WavelengthDark Current (Max)Light CurrentNumber of ElementsOperating Temperature ClassificationCollector-Emitter Sat Volt (max)Rad HardenedMax.sensivityV(CEO)极性通道数目Photoelectric current minPhotoelectric currentPhotoelectric current max系列电流 - 集电极 (Ic)(最大值)Current - Dark (Typ)Light Current SlopeKnee PointCollector current检测频谱直径检测到的最大波长Output DeviceSlot WidthAperture WidthForward CurrentSensing MethodSensing DistanceOutput ConfigurationLens TypeOutput Rise TimeOutput Fall TimeReverse Breakdown VoltageHermetic StyleAngle of Half SensitivityHeightLengthNumber of ChannelsNumber of PinsTypical Fall TimeTypical Rise TimeWidthOther NamesMaximum Collector CurrentMounting Stylet riseTop(max)Gap widthP totVcc(min)t fallAperture widthLeadfree Defin.IfCurrent - DC Forward (If)Op.temp.max.Op.temp.min.OptempminReverse V/VecoOptempmaxSensrange minSensrange maxLeadfree DefinForward VoltageHigh Level Output CurrentHigh Level Output VoltageLow Level Output CurrentLow Level Output VoltageReverse VoltageSensor ApertureHousing MaterialDuration of Output Short Vcc or GroundOperating Supply VoltageHysteresis (H)IRED Trigger CurrentMounting ConfigurationLow Level Supply CurrentOutputPropagation Delay&44; Low-High&44;High-LowOutput LogicHigh Level Supply CurrentMaximum Trigger CurrentSupply VoltageCurrent - SupplyVoltage - SupplyContinuous Forward CurrentPropagation Delay Low-HighHigh-LowOutput WavelengthVoltage,CollectortoEmitter检测到的最小波长PrimaryType
SD3410-002
6
SD3410-002

Phototransistors Silicon Photodarling Flat Window Can

Honeywell

询价RoHS Compliant75 us+ 125 C- 55 C75 us150 mWPhototransistor28 Days1TO-46-3 Lens Top Metal CanLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-4615 V1.1 VPhotodarlingtons5 VT0-46, Flat Window250 nA75 µs2.0 mA90°-NPNTO-206-ABCompliantTO-463880nm-1251.175000(Typ)15175000(Typ)250150-55Photodarlington90----2000(Min)5-55°C ~ 125°CThrough HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.900.6mA0.153in.Hx0.219in.Dia.75us90°250nA0.5in.(Min.)TO-46150mW125°C-55°C75usNPN15V1.1V--0.018in.---------------------------75µs--------------------------------------250nA---------------------------------------------------------------------------
SD5410-002
6
SD5410-002

Phototransistors Silicon PhtoDrlngton TO-46 Mtl/Gls LnsdPk

Honeywell

询价RoHS Compliant75 us+ 125 C- 55 C75 us150 mWPhototransistor84 Days1TO-46-3 Metal CanLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-4615 V1.1 VPhotodarlingtons5 VT0-46, Dome Lensed250 nA75 µs4.0 mA12°Through HoleNPNTO-206-ABCompliantTO-463880nm15V1251.175000(Typ)15175000(Typ)250150-55Photodarlington12Phototransistors250nATop View150mW4000(Min)5-55 °C to 125 °C [-67 °F to 257 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.12-----------------------75µs通孔安装375µs5.56mm5.56 x 5.56 x 3.89mm---------4000µA12 °TO-46250nA---250 nA3.89mm5.56mm----------------------------NPN1---------------------------------------------------------------------------------
SDP8475-201
7
SDP8475-201

Phototransistors Low Light Rejection Phototransistor

Honeywell

询价RoHS Compliant15 us+ 85 C- 40 C15 us70 mWPhototransistor84 Days1RadialLead free / RoHS Compliant30 VPhotodetector TransistorsLow Light Rejection Phototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component70 mWT-130 V0.4 VPhototransistors5 VT1100 nA15 µs4.0 mA20°Through HoleNPN----935nm30V------------100nATop View70mW---40 °C to 85 °C [-40 °F to 185 °F]-The radiation source is a IRED with a peak wavelength of 935 nm.20-3.94 x 3.94 x 6.35mm---------------Clear14.0 mAT-1-------------------------100nA--40 µ A20°Top View100nARadialThrough Hole70mW935nm30V30clear20 °935-----------------44...14 mA14---4.0 mA/mW/cm² to 14.0 mA/mW/cm²0.125 mW/cm²----------------20 °6.35mm3.94mm1215000ns15000ns3.94mm-------------------------------------------------
SD5410-003
5
SD5410-003

Phototransistors Silicon PhtoDrlngton TO-46 Mtl/Gls LnsdPk

Honeywell

询价RoHS Compliant75 us+ 125 C- 55 C75 us150 mWPhototransistor84 Days1TO-46-3 Metal CanLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-4615 V1.1 VPhotodarlingtons5 VT0-46, Dome Lensed250 nA75 µs8.0 mA12°Through HoleNPNTO-206-ABCompliantTO-463-30V1251.175000(Typ)15175000(Typ)250150-55Photodarlington12Phototransistors100nATop View150mW8000(Min)5-55 °C to 125 °C [-67 °F to 257 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.12--------------8mA*-----------------------------------------------------------------------------------------------------------------------------------------------
SDP8476-201
4
SDP8476-201

Phototransistors .32mAPHOTOTRANSISTOR IR COMPONENT 20 deg

Honeywell

询价In Transition15 us+ 85 C- 40 C15 us70 mWPhototransistor84 Days1RadialLead free / RoHS Compliant30 VPhotodetector TransistorsLow Light Rejection Phototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component70 mWT-130 V0.4 VPhototransistors5 VT1100 nA15 µs1.0 mA20°Through HoleNPNT-1CompliantT-12935nm30V850.415000(Typ)30115000(Typ)100100-40Phototransistor20Phototransistors100nASide View100mW---Through Hole----------------6mA*-Clear6.0 mA----------935------------------40 µ A--------30clear20 °935-----------------------1.0 mA/mW/cm² to 6.0 mA/mW/cm²0.125 mW/cm²6 mA-----------------------480-1959------------------------------------------------
SDP8105-001
8
SDP8105-001

Phototransistors 10kOhm PULL UP TO-46 IR COMPONENT 12 deg

Honeywell

询价RoHS Compliant75 us+ 85 C- 40 C75 us70 mWPhototransistor84 Days1RadialLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component70 mWT-115 V1.1 VPhotodarlingtons5 VT1250 nA75 µs0.5 mA20°Through HoleNPNT-1CompliantT-12935nm15V851.175000(Typ)15175000(Typ)25070-40Photodarlington20Phototransistors250nATop View70mW500(Min)5-40 °C to 85 °C [-40 °F to 185 °F]Through HoleThe radiation source is a IRED with a peak wavelength of 935 nm.200.5mA0.25in.Hx0.125in.D75us20°250nA0.5in.(Min.)T-170mW85°C-40°C75usNPN15V1.1V---Black-----75µs通孔安装275µs12.7mm5.08 (Dia.) x 12.7mm935--------0.5mA20 °3mm (T-1)250nA---250 nA---------------Black-------------------------红外5.08mm935nm---------------------------------------------------------------------
HOA1873-013
6
HOA1873-013

Optical Switches, Transmissive, Phototransistor Output Trnsmisve /Plstc Pkg Darlington Output

Honeywell

询价RoHS Compliant75 us+ 85 C- 40 C75 us100 mWSensor Misc84 Days1PCB MountLead free / RoHS Compliant15 VUnamplified---------------Through Hole------15V-----------Optical Switches, Transmissive, Phototransistor Output------40°C ~ 85°C-----------------30mAHOA1873----THTBulkNO-------HOA1873-013112 weeks1----------75µs---------------------------------------------Phototransistor2.54 mm1.52 mm50 mATransmissive, Slotted0.100" (2.54mm)Photodarlington--------------30 mAThrough Hole75µs15°C2.54mm100mW3V75µs1.52mmRoHS-conform20mA50mA------------------------------------
SDP8106-001
5
SDP8106-001

Phototransistors .5mA T1 BLK PLASTIC IR COMPONENT 20 deg

Honeywell

询价RoHS Compliant75 us+ 85 C- 40 C75 us100 mWPhototransistor84 Days1RadialLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component100 mWSide Looker15 V1.1 VPhotodarlingtons5 VSide-Looking250 nA75 µs1.0 mA50°Through Hole, Right AngleNPNSide LookerCompliantSide Looker2935nm15V851.175000(Typ)15175000(Typ)250100-40Photodarlington50Phototransistors250nASide View100mW1000(Min)5-40 °C to 85 °C [-40 °F to 185 °F]-The radiation source is a IRED with a peak wavelength of 935 nm.501mA0.225in.Hx0.175in.W75us50°250nA0.5in.(Min.)Side-LookingPlastic100mW85°C-40°C75usNPN15V1.1V--0.02in.Black-Side Looker---------935-------------------------------Black15 V5 V50 degThrough Hole-40C to 85C935 nm250 nA1000 uA1Industrial1.1 VNo-----------------------Black-------------------------------------------------------------
SDP8406-002
6
SDP8406-002

Phototransistors Silicon PhotoTrans Sd-looking Plstc Pkg

Honeywell

询价RoHS Compliant15 us+ 85 C- 40 C15 us100 mWPhototransistor21 Days1RadialLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component100 mWSide Looker30 V0.4 VPhototransistors5 VSide-Looking100 nA15 µs1.80 mA50°Through Hole, Right AngleNPNSide LookerCompliantSide Looker2880 nm30V850.415000(Typ)30115000(Typ)100100-40Phototransistor50Phototransistors100nASide View100mW36005----1.8mA0.225in.Hx0.175in.W15us50°100nA0.5in.(Min.)Side-LookingPlastic100mW85°C-40°C15usNPN30V0.4V3.6mA*0.02in.Clear3.60 mASide LookerSIDEVIEWTUBENO-------SDP8406-00210010 weeks100100°1500nsTHT4nA----800nm940nm------------------30 V5 V50 degThrough Hole-40C to 85C935 nm100 nA3600 uA1Industrial0.4 VNo880nm------------------------------------------------85°C-40°C----------------------------------
SDP8405-013
5
SDP8405-013

Phototransistors 0.37 mW/cm2 maximum OPEN COLLECTOR 50deg

Honeywell

询价In Transition15 us+ 85 C- 40 C15 us70 mWPhototransistor84 Days1RadialLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component70 mWT-130 V0.4 VPhototransistors5 VT1100 nA15 µs0.32 mA20°Through HoleNPNT-1CompliantT-12880 nm30V850.415000(Typ)30115000(Typ)10070-40Phototransistor20Phototransistors100nATop View70mW9205-40 °C to 85 °C [-40 °F to 185 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.20--------------0.92mA*--0.92 mAT-1---------935-------------------20°Top View100nARadialThrough Hole70mW935nm30V----Clear30 V5 V20 degThrough Hole-40C to 85C935 nm100 nA920 uA1Industrial0.4 VNo-------*0.92mA--------------Clear-------------------------------------------------------------
SD5491-004
7
SD5491-004

Phototransistors Silicon PhotoTrans TO-18 Mtl Can Pkg

Honeywell

询价RoHS Compliant2 us+ 125 C- 55 C2 us150 mWPhototransistor84 Days1TO-206AA, TO-18-3 Metal CanLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-1830 V0.4 VPhototransistors5 VT0-18, Dome Lensed100 nA2.0 µs4.0 mA12°Through HoleNPNTO-206-AACompliantTO-183880 nm30V1250.42000(Typ)3012000(Typ)100150-55Phototransistor12Phototransistors100nATop View150mW80005-55 °C to 125 °C [-67 °F to 257 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.124mA0.2in.Hx0.212in.Dia.2us12°100nA0.5in.(Min.)TO-18150mW125°C-55°C2usNPN30V0.4V4mA*0.017in.-8.0 mAT0-18, Dome LensedTO18BULKNO2µs通孔安装32µs17.77mm4.06 (Dia.) x 17.77mm935----5 °15 nsTHT16 nA2mA12 °TO-18100nA-------12°Top View100nATO-206AA, TO-18-3 Metal CanThrough Hole150mW935nm30V------------------------*4MA----红外4.06mm880nm------------------------------------55 °C5 V125 °C150 nm18 nmRoHS-conform----------------------------
HOA6971-N51
4
HOA6971-N51

Optical Switches, Transmissive, Photo IC Output Opaque Optoschmitt No Mount Tab

Honeywell

询价RoHS Compliant70 ns+ 70 C- 40 C70 ns100 mWPhotointerrupter28 Days1PCB MountLead free / RoHS Compliant--Optoschmitt Sensor-40 °C to 70 °C [-40 °F to 158 °F]PlasticIR Switch-----------Through Hole------------------Optical Switches, Transmissive, Photo IC Output------40 °C to 70 °C [-40 °F to 158 °F]-Output is LO when incident light intensity is above the turn-on threshold level.------------------Black--------------------------70ns---10 µA-----------------------------------------Open Collector, Buffer3.18 mm1.27 mm, 0.25 mm50 mATransmissive, Slotted0.125" (3.18mm)NPN - Open Collector, Buffer-70 ns70 ns3 V------------------------------1.6 V800 uA2.4 V12.8 mA0.4 V3 V1,52 mm x 0,25 mm [0.060 in x 0.010 in]Polysulfone, Opaque1.0 second4.5 V to 12.0 V0.0515 mANo Mounting Tab15 mAOpen-Collector5.0 µsBuffer15 mA15 mA12.0 Vdc15mA4.5 V ~ 12 V50 mA5.0 µs----
SD1440-004L
5
SD1440-004L

Phototransistors Silicon PhotoTrans Mtl Can Coaxial Pkg

Honeywell

询价RoHS Compliant15 us+ 125 C- 55 C15 us75 mWPhototransistor28 Days1Coaxial, Metal CanLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component75 mWMetal Can30 V0.4 VPhototransistors5 VCoaxial, Lead Case100 nA15 µs6.0 mA24°Through HoleNPNTO-99CompliantMetal Can2935 nm30V1250.415000(Typ)30115000(Typ)10075-55Phototransistor24Phototransistors100nATop View75mW6000(Min)5-Through Hole--1.5mA0.062in.Dia.x0.122in.H15us-100nA1in.CompactMetalCanCoaxialPackage75mW125°C-55°C15usNPN30V---0.02in.---METALLBULKNO-------SD1440-004L108 weeks10015nsTHT6nA----75nm24nm------------------------------880nm30V------------------------50 V------------------------------------------------------935 nm0.4V(Sat.)--
SDP8405-003
8
SDP8405-003

Phototransistors PHOTOTRANSISTOR T1

Honeywell

询价RoHS Compliant15 us+ 85 C- 40 C15 us70 mWPhototransistor84 Days1Radial, 3mm Dia (T-1)Lead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component70 mWT-130 V0.4 VPhototransistors5 VT1100 nA15 µs12.0 mA20°Through HoleNPNT-1CompliantT-12880 nm30V850.415000(Typ)30115000(Typ)10070-40Phototransistor20Phototransistors100nATop View70mW240005-40 °C to 85 °C [-40 °F to 185 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.2012mA0.25in.Hx0.125in.Dia.15us20°100nA0.5in.(Min.)T-170mW85°C-40°C15usNPN30V0.4V24mA*-Clear24.0 mAT1---15000ns通孔安装215000ns3.94mm3.94 x 3.94 x 6.35mm935--------24000µA20 °3mm (T-1)100nA----6.35mm3.94mm-20°Top View100nARadial, 3mm Dia (T-1)Through Hole70mW935nm30V30clear20 °935Clear--------------NPN11212...24 mA24*24mA---24 mA----------------------------------------------------------------------935nm-
SDP8406-003
8
SDP8406-003

Phototransistors PHOTOTRANSISTOR SIDE VIEW

Honeywell

询价RoHS Compliant15 us+ 85 C- 40 C15 us100 mWPhototransistor21 Days1RadialLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-40 °C to 85 °C [-40 °F to 185 °F]PlasticIR Component100 mWSide Looker30 V0.4 VPhototransistors5 VSide-Looking100 nA15 µs3.40 mA50°Through Hole, Right AngleNPNSide LookerCompliantSide Looker2880 nm30V850.415000(Typ)30115000(Typ)100100-40Phototransistor50Phototransistors100nASide View100mW65005----1.8mA0.225in.Hx0.175in.W15us50°100nA0.5in.(Min.)Side-LookingPlastic100mW85°C-40°C15usNPN30V0.4V6.5mA*0.02in.Clear6.50 mASide LookerSIDEVIEWINDIVIDUALNO-------SDP8406-003111 weeks10015nsTHT3.4nA----100nm50nm------------------30 V5 V50 degThrough Hole-40C to 85C935 nm100 nA6500 uA1Industrial0.4 VNo880nm30V-----------------------------------------------------------------------------------
SD5443-002
4
SD5443-002

Phototransistors Silicon PhotoTrans TO-46 Mtl/Gls LnsdPk

Honeywell

询价RoHS Compliant15 us+ 125 C- 55 C15 us150 mWPhototransistor33 Days1TO-46-3 Metal CanLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-4630 V0.4 VPhototransistors5 VT0-46, Dome Lensed100 nA15 µs4.0 mA18°Through HoleNPNTO-206-ABCompliantTO-463880 nm30V1250.415000(Typ)30115000(Typ)100150-55Phototransistor18Phototransistors100nATop View150mW4000(Min)5-Through Hole----------------4mA*----TO46INDIVIDUALNO-------SD5443-00210011 weeks10015nsTHT4nA----150nm18nm------------------------------880nm30V-----------------------------------------------------------------------------------
SMD2440-001
9
SMD2440-001

Phototransistors Glass Lens Phototransistor

Honeywell

询价RoHS Compliant15 us+ 125 C- 55 C15 us125 mWInterface Misc42 Days1002-SMD, No LeadLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-55 °C to 125 °C [-67 °F to 257 °F]CeramicIR Component125 mWCSMD30 V0.4 VPhototransistors5 VSurface Mount (Glass Lens)100 nA15 µs1.5 mA28°Surface Mount-CSMDCompliantCSMD2880 nm30V------------100nATop View125mW---55 °C to 125 °C [-67 °F to 257 °F]No LeadBulk Packaged281.5-4.0uA-15us30°--------------4.0 mASurface Mount (Glass Lens)SMDBulk-15µs表面安装215µs3.8mm3.8 x 2.5 x 2.1mm-----------------2.1mm2.5mm---------30clear28 °880-----------------1.51.5...4 mA4-----------------15 µs15 µs-Ceramic--------------------------------------------------------Detector
SD1410-003L
7
SD1410-003L

Phototransistors 24deg 4.0mA Coaxial

Honeywell

询价RoHS Compliant75 us+ 125 C- 55 C75 us75 mWPhototransistor84 Days1Coaxial, Metal CanLead free / RoHS Compliant15 VPhotodarlingtonPhotodarlington-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component75 mWMetal Can15 V1.1 VPhotodarlingtons5 VCoaxial, Lead Case250 nA75 µs4.0 mA24°Through HoleNPNTO-99CompliantMetal Can2880nm15V1251.175000(Typ)15175000(Typ)25075-55Photodarlington24Phototransistors250nATop View75mW4000(Min)5-55 °C to 125 °C [-67 °F to 257 °F]Through HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.244mA0.091in.Hx0.079in.Dia.75us24°250nA1in.(Min.)CompactMetalCanCoaxial75mW125°C-55°C75usNPN15V1.1V--0.02in.------75000ns通孔安装275000ns2.41mm2.41 x 2.41 x 3.1mm---------4000µA24 °金属罐250nA---250 nA3.1mm2.41mm40 µ A---------------------------NPN1---------------------------------------------------------------------------------
SD2440-002
4
SD2440-002

Phototransistors Silicon Phototransis

Honeywell

询价RoHS Compliant15 us+ 125 C- 55 C15 us125 mWPhototransistor84 Days1PillLead free / RoHS Compliant30 VPhotodetector TransistorsPhototransistor-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component125 mWMetal Can30 V0.4 VPhototransistors5 VMiniature, Pill100 nA15 µs2.0 mA48°PCB, Through HoleNPNTO-99CompliantMetal Can2880 nm30V1250.415000(Typ)30115000(Typ)100125-55Phototransistor48-100nATop View125mW2000(Min)5------------------------PILLBULKNO-------SD2440-00210013 weeks10015nsTHT7nA----125nm48nm-------------------------------30V-------------------------Yes---------------------------------------------------------
SD3410-001
5
SD3410-001

Phototransistors 3mA MINI, PILL 48deg IR COMPONENT

Honeywell

询价RoHS Compliant75 us+ 125 C- 55 C75 us150 mWPhototransistor84 Days1TO-46-3 Lens Top Metal CanLead free / RoHS Compliant15 VPhotodetector TransistorsPhotodarlington-55 °C to 125 °C [-67 °F to 257 °F]MetalIR Component150 mWTO-4615 V1.1 VPhotodarlingtons5 VT0-46, Flat Window250 nA75 µs0.6 mA90°-NPNTO-206-ABCompliantTO-463880nm-1251.175000(Typ)15175000(Typ)250150-55Photodarlington90Phototransistors---600(Min)5-55°C ~ 125°CThrough HoleThe radiation source is a tungsten lamp operating at a color temperature of 2870°K.900.6mA0.153in.Hx0.219in.Dia.75us90°250nA0.5in.(Min.)TO-46150mW125°C-55°C75usNPN15V1.1V--0.018in.---------------------------75µs--------------------------------------250nA---------------------------------------------------------------------------
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