GeneSiC Semiconductor, Inc.- 分立IGBT

GeneSiC Semiconductor, Inc. 成立于2004年，总部位于美国弗吉尼亚州杜勒斯，是一家领先的碳化硅（SiC）功率半导体开发商和制造商。公司专注于高性能SiC分立器件和模块，面向电动汽车、工业电机驱动、航空航天和可再生能源系统等严苛应用领域。其产品线涵盖650V、1200V和1700V的SiC MOSFET、肖特基二极管、裸芯片及定制功率模块，均针对高效率、高温和高频工作优化。GeneSiC器件以其高鲁棒性、低开关损耗和卓越的性价比著称，成为高可靠性领域的优选方案。2023年初，公司被纳微半导体（Navitas Semiconductor）收购，整合后形成氮化镓与碳化硅的强强联合，加速了新一代宽禁带技术的普及。GeneSiC拥有超过100项SiC材料和器件设计专利，技术实力雄厚。公司在美国运营先进的制造和测试设施，确保严格的质量控制。它在全球SiC市场中占有重要地位，为多家一级汽车和工业客户提供服务。在被收购前，GeneSiC是少数具备从外延到封装成品一体化制造能力的独立SiC供应商之一。

分立IGBT - 型号列表

共 15 个型号

制造商零件编号	库存	价格	包装方式	工作温度	连续漏极电流（Id）@ 25°C	封装形式	标准包装数量	RoHS	晶体管类型	漏源电压（Vdss）	安装样式	海关税号	最大功耗	重量	引脚数	工厂包装数量	制造商全称	配置	安装类型	供应商器件封装	集电极-发射极饱和电压（最大）@ Vge, Ic	系列	技术	FET类型	FET特性	最大功率	导通电阻 Rds(on) (最大) @ Id, Vgs	最大栅源电压 Vgs	栅极电荷	通道数量	平均正向功率	导通电阻（最大）	漏极电流（Idss）@ Vds（Vgs=0）	下降时间	上升时间（典型）	首抽头延迟	电流	电压	通道类型	额定功率	材料表面处理	漏电流（最大）	其他名称	IGBT类型	输入类型	开关能量	供电电压	Td（开/关）@ 25°C	Vce饱和电压（最大）	反向恢复时间（trr）	栅极电荷（Qg）（最大）@ Vgs	集电极脉冲电流 (Icm)	测试条件	开关时间（Ton, Toff）（最大）	宽度	高度	长度	类型
GA10SICP12-247 SIC CO-PACK SJT/RECT 10A 1.2KV MOSFET 1200V 25A SIC CoPak GeneSiC Semiconductor	10	1: ¥265.88	Tube	- 55 C	25 A	TO-247-3	30	RoHS Compliant	N-Channel	-	Through Hole	-	-	-	-	30	GeneSiC Semiconductor	Single	-	-	1200 V	GA10SICP12	SiC	-	-	-	-	30 V	55 nC	1 Channel	170 W	100 mOhms	-	-	-	-	10A	1200V	Enhancement	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA20SICP12-247 SIC CO-PACK SJT/RECT 20A 1.2KV MOSFET 1200V 45A Std SIC CoPak GeneSiC Semiconductor	-		Tube	-	-	-	-	RoHS Compliant	-	-	-	-	-	-	-	-	GeneSiC Semiconductor	-	-	-	-	-	SiC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA100SICP12-227 SIC CO-PACK SJT/RECT 100A 1.2KV SIC CO-PACK, 1.2kV, TO-227 MOSFET 1200V 200A Standard GeneSiC Semiconductor	10	1: ¥1,306.2256	:Each	:175°	:100A	SOT-227-4, miniBLOC	10	-	-	:1.2kV	-	85412900	:133W	0	:4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100A	1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA06JT12-247 TRANS SJT 1200V 6A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 230mO-6A GeneSiC Semiconductor	251	1: ¥109.48	Tube	- 55 C	6A (Tc) (90°C)	TO-247-3	30	RoHS Compliant	N-Channel	1200V (1.2kV)	Through Hole	-	-	-	-	30	GeneSiC Semiconductor	Single	Through Hole	TO-247AB	1200 V	GA06JT12	SiC	Silicon Carbide, Normally Off	Super Junction	146W	220 mOhm @ 6A	-	-	1 Channel	9 W	220 mOhms	6 A	-	-	-	-	-	-	9 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 GA04JT17-247 TRANS SJT 1700V 4A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A SIC SUPER JUNCTION TRANSITOR, TO-247AB GeneSiC Semiconductor	154	1: ¥217.056	Tube	- 55 C	4A (Tc) (95°C)	TO-247-3	30	RoHS Compliant	:JFET	1700V (1.7kV)	Through Hole	85412900	:91W	0	:3	-	-	Single	Through Hole	TO-247AB	-	-	-	Silicon Carbide, Normally Off	Super Junction	91W	500 mOhm @ 4A, 10V	-	-	-	-	-	4 A	50 ns	28 ns	73 ns	-	-	-	91 W	-	:10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 GA08JT17-247 TRANS SJT 1700V 8A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A SIC SUPER JUNCTION TRANSITOR, TO-247AB GeneSiC Semiconductor	110	1: ¥365.296	Tube	- 55 C	8A (Tc) (90°C)	TO-247-3	30	RoHS Compliant	:JFET	1700V (1.7kV)	Through Hole	85412900	:16W	0	:3	-	-	Single	Through Hole	TO-247AB	-	-	-	Silicon Carbide, Normally Off	Super Junction	16W	250 mOhm @ 8A	-	-	-	-	-	4 A	50 ns	28 ns	73 ns	-	-	-	91 W	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA05JT12-247 TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-247AB MOSFET 1200V 15A Standard GeneSiC Semiconductor	10	1: ¥76.50	*	:175°	5A (Tc)	*	30	-	:JFET	1200V (1.2kV)	-	85412900	:57W	0	:3	-	-	-	*	*	-	*	-	Silicon Carbide, Normally Off	Super Junction	57W	280 mOhm @ 5A, 100mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA10JT12-247 TRANS SJT 1.2KV 10A SIC JUNCTION TRANS, 1.2KV, 10A, TO-247AB MOSFET 1200V 25A Standard GeneSiC Semiconductor	10	1: ¥134.368	:Each	:175°	:10A	-	30	-	:JFET	:1.2kV	-	85412900	:91W	0	:3	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA20JT12-247 TRANS SJT 1.2KV 20A SIC JUNCTION TRANS, 1.2KV, 20A, TO-247AB MOSFET 1200V 45A Standard GeneSiC Semiconductor	10	1: ¥244.256	*	:175°	20A	*	30	-	:JFET	1200V (1.2kV)	-	85412900	:151W	0	:3	-	-	-	*	*	-	-	-	Silicon Carbide, Normally Off	Super Junction	5W	70 mOhm @ 20A, 400mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 GA16JT17-247 TRANS SJT 1700V 16A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 110mO- 16A SIC SUPER JUNCTION TRANSITOR, TO-247AB GeneSiC Semiconductor	10	1: ¥687.616	Tube	:-55°C	16A (Tc) (90°C)	TO-247-3	30	RoHS Compliant	:JFET	1700V (1.7kV)	-	85413000	:31W	0	:3	30	-	-	Through Hole	TO-247AB	-	GA16JT17	-	Silicon Carbide, Normally Off	Super Junction	32W	110 mOhm @ 16A	-	-	-	-	-	:100nA	-	-	-	-	-	-	-	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA35XCP12-247 IGBT 1200V 100A SOT-247 IGBT 1200V SOT247 IGBT Transistors 1200V 35A SIC IGBT CoPak GeneSiC Semiconductor	32	1: ¥257.856	Tube	- 40 C	-	TO-247-3	30	RoHS Compliant	-	-	Through Hole	-	-	-	-	30	GeneSiC Semiconductor	-	Through Hole	TO-247AB	3V @ 15V, 35A	GA35XCP12	-	-	-	-	-	20 V	50nC	-	-	-	-	-	-	-	-	-	-	-	-	-	1242-1141	PT	Standard	2.66mJ (on), 4.35mJ (off)	1200V	40ns/232ns	3 V	36ns	0.3 mA	35A	800V, 35A, 2.2 Ohm, 15V	-	-	-	-	-
2 GA20SICP12-263 SIC CO-PACK SJT/RECT 20A 1.2KV SIC CO-PACK, 1.2kV, TO-263 MOSFET 1200V 45A SIC CoPak GeneSiC Semiconductor	93	1: ¥359.788	:Each	:175°	:20A	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA	30	Lead free / RoHS Compliant	-	:1.2kV	-	85412900	:157W	0	:3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20A	1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA05JT03-46 TRANS SJT 300V 9A MOSFET SiC High Temperature JT GeneSiC Semiconductor	44	1: ¥498.032	Bulk	+ 225 C	9 A	TO-46-3	-	RoHS Compliant	N-Channel	-	Through Hole	-	-	-	-	50	GeneSiC Semiconductor	Single	-	-	300 V	-	SiC	-	-	-	-	30 V	14.6 nC	1 Channel	20 W	620 mOhms	-	12.4 ns	6.6 ns	12 ns	-	-	Enhancement	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA100JT17-227 TRANS SJT 1700V 160A SOT227 MOSFET 1700V 160A SiC Junction Transistor GeneSiC Semiconductor	10	30: ¥1,708.50	Tube	+ 175 C	160 A	SOT-227-4	-	RoHS Compliant	N-Channel	-	Chassis Mount	-	-	-	-	10	GeneSiC Semiconductor	Single	-	-	1700 V	-	SiC	-	-	-	-	30 V	478 nC	1 Channel	535 W	21 mOhms	-	120 ns	100 ns	160 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50 ns	-	-	-	-
GA10SICP12-263 TRANS SJT 1200V 25A TO263-7 MOSFET 1200V 25A Std SIC CoPak GeneSiC Semiconductor	98	1: ¥265.812	Reel	+ 175 C	25 A	TO-263-7	-	RoHS Compliant	N-Channel	-	SMD/SMT	-	-	-	-	50	GeneSiC Semiconductor	Single	-	-	1200 V	-	SiC	-	-	-	-	30 V	55 nC	1 Channel	170 W	100 mOhms	-	-	-	-	-	-	Enhancement	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9.169 mm	4.597 mm	10.668 mm	Transistor/Schottky Diode Co-Pack