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GeneSiC Semiconductor, Inc.
大功率分立半导体模块

GeneSiC Semiconductor, Inc.- 大功率分立半导体模块

GeneSiC Semiconductor, Inc. 成立于2004年，总部位于美国弗吉尼亚州杜勒斯，是一家领先的碳化硅（SiC）功率半导体开发商和制造商。公司专注于高性能SiC分立器件和模块，面向电动汽车、工业电机驱动、航空航天和可再生能源系统等严苛应用领域。其产品线涵盖650V、1200V和1700V的SiC MOSFET、肖特基二极管、裸芯片及定制功率模块，均针对高效率、高温和高频工作优化。GeneSiC器件以其高鲁棒性、低开关损耗和卓越的性价比著称，成为高可靠性领域的优选方案。2023年初，公司被纳微半导体（Navitas Semiconductor）收购，整合后形成氮化镓与碳化硅的强强联合，加速了新一代宽禁带技术的普及。GeneSiC拥有超过100项SiC材料和器件设计专利，技术实力雄厚。公司在美国运营先进的制造和测试设施，确保严格的质量控制。它在全球SiC市场中占有重要地位，为多家一级汽车和工业客户提供服务。在被收购前，GeneSiC是少数具备从外延到封装成品一体化制造能力的独立SiC供应商之一。

大功率分立半导体模块 - 型号列表

共 27 个型号

制造商零件编号	库存	价格	封装形式	RoHS	工厂包装数量	配置	包装方式	工作温度	系列	REACH	ESD保护	最大额定电流	反向关断电压（典型）	供电电压	标准包装数量	安装类型	安装样式	供应商器件封装	制造商全称	产品	转速	测试电流	最小输入电压	峰值脉冲电流（8/20µs）	反向漏电流 @ Vr	直流反向电压（Vr）（最大）	平均整流电流（每二极管）	二极管类型	连续漏极电流（Id）@ 25°C	直流正向电流（If）（最大）	其他名称	电压负载调整率	技术	二极管配置	栅极触发电压 Vgt (最大)	类型	晶体管类型	集电极电流（Ic）（最大）	集电极-发射极饱和电压（最大）@ Vge, Ic	反向恢复时间（trr）	海关税号	重量	引脚数	输入端	IGBT类型	最大栅源电压 Vgs	NTC热敏电阻	Vce饱和电压（最大）	栅极电荷（Qg）（最大）@ Vgs	输入电容 (Cies) @ Vce	集电极截止电流（最大）	FET类型	FET特性	最大功率	额定功率	导通电阻 Rds(on) (最大) @ Id, Vgs	平均正向功率	导通电阻（最大）	漏源电压（Vdss）	漏极电流（Idss）@ Vds（Vgs=0）
MBRH20045R 45V 200A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	29	1: ¥178.296	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	200	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 GA100XCP12-227 IGBT Modules 1200V 100A SIC IGBT CoPak IGBT,SIC,1200V,100A,SOT-227 GeneSiC Semiconductor	10	1: ¥2,271.608	:SOT-227	-	-	-	-	:-40°C	-	-	-	-	-	:1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	:100A	-	-	85411000	0.029	:3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12040 40V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	10	1: ¥195.84	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	120	40	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12040R 40V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	34	1: ¥199.32	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	40	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH20045 45V 200A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	34	1: ¥244.62	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	200	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12045R 45V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	25	1: ¥195.84	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12020R 20V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	10	1: ¥181.20	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12020 20V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	10	1: ¥195.772	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	120	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8335SM Schottky Diodes & Rectifiers 35V 80A Schottky Recovery DIODE SCHOTTKY 35V 80A D61-3SM GeneSiC Semiconductor	10	1: ¥83.776	D61-3SM	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST833	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3SM	-	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	35V	80A (DC)	Schottky	80 A	-	FST8335SMGN	35 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8345M Schottky Diodes & Rectifiers 45V 80A Schottky Recovery DIODE SCHOTTKY 45V 80A D61-3M GeneSiC Semiconductor	10	1: ¥83.776	D61-3M	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST834	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3M	GeneSiC Semiconductor	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	45V	80A (DC)	Schottky	80 A	80 A	FST8345MGN	45 V	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8345SM Schottky Diodes & Rectifiers 45V 80A Schottky Recovery DIODE SCHOTTKY 45V 80A D61-3SM GeneSiC Semiconductor	10	1: ¥83.776	D61-3SM	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST834	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3SM	-	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	45V	80A (DC)	Schottky	80 A	-	FST8345SMGN	45 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST10080 80V 100A TO-249AB Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	50	1: ¥350.948	TO-249AB	Yes	40	Standard	-	-	-	Yes	No	100	80	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GB100XCP12-227 IGBT 1200V 100A SOT-227 IGBT Modules 1200V 100A SIC IGBT CoPak GeneSiC Semiconductor	27	1: ¥1,505.724	SOT-227-4	RoHS Compliant	10	Single	Bulk	- 40 C	GB100XCP12	-	-	-	-	1200V	1	Chassis Mount	SMD/SMT	SOT-227	GeneSiC Semiconductor	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	SiC	-	-	-	-	100A	2V @ 15V, 100A	-	-	-	-	Standard	PT	20 V	No	1.9 V	- 400 nA	8.55nF @ 25V	1mA	-	-	-	-	-	-	-	-	-
GA040TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 40A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	GA04	-	-	-	-	-	-	-	-	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA060TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 60A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	GA06	-	-	-	-	-	-	-	-	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA080TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 80A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA03JT12-247 TRANS SJT 1200V 3A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 550mO-3A JFET SiC Super Junc Trans 1200V-Rds 550mO-3A GeneSiC Semiconductor	116	1: ¥69.156	TO-247-3	RoHS Compliant	30	Single	Tube	- 55 C	GA03	-	-	-	-	-	30	Through Hole	Through Hole	TO-247AB	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	3A (Tc) (95°C)	-	-	-	SiC	-	-	-	N-Channel	-	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Silicon Carbide, Normally Off	Super Junction	91W	5 W	460 mOhm @ 3A	5 W	470 mOhms	1200V (1.2kV)	3 A
MSRTA300100(A)D DIODE STD REC 1000V 300A 3TOWER Rectifiers 1000V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	*	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	*	*	*	3800 A	20 uA	*	*	*	-	300 A	-	-	-	*	1000 V	Standard Recovery Rectifiers	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSRTA300120(A)D DIODE STD REC 1200V 300A 3TOWER Rectifiers 1200V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	-	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	Standard Recovery >500ns, > 200mA (Io)	25µA @ 200V	1.2V @ 300A	3800 A	20 uA	1200V (1.2kV)	300A (DC)	Standard	-	300 A	-	-	-	1 Pair Series Connection	1200 V	Standard Recovery Rectifiers	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSRTA300140(A)D DIODE STD REC 1400V 300A 3TOWER Rectifiers 1400V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	*	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	*	*	*	3800 A	20 uA	*	*	*	-	300 A	-	-	-	*	1400 V	Standard Recovery Rectifiers	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-