GeneSiC Semiconductor, Inc.- 通用双极型晶体管

GeneSiC Semiconductor, Inc. 成立于2004年，总部位于美国弗吉尼亚州杜勒斯，是一家领先的碳化硅（SiC）功率半导体开发商和制造商。公司专注于高性能SiC分立器件和模块，面向电动汽车、工业电机驱动、航空航天和可再生能源系统等严苛应用领域。其产品线涵盖650V、1200V和1700V的SiC MOSFET、肖特基二极管、裸芯片及定制功率模块，均针对高效率、高温和高频工作优化。GeneSiC器件以其高鲁棒性、低开关损耗和卓越的性价比著称，成为高可靠性领域的优选方案。2023年初，公司被纳微半导体（Navitas Semiconductor）收购，整合后形成氮化镓与碳化硅的强强联合，加速了新一代宽禁带技术的普及。GeneSiC拥有超过100项SiC材料和器件设计专利，技术实力雄厚。公司在美国运营先进的制造和测试设施，确保严格的质量控制。它在全球SiC市场中占有重要地位，为多家一级汽车和工业客户提供服务。在被收购前，GeneSiC是少数具备从外延到封装成品一体化制造能力的独立SiC供应商之一。

通用双极型晶体管 - 型号列表

共 8 个型号

制造商零件编号	库存	价格	标准包装数量	RoHS	漏源电压（Vdss）	连续漏极电流（Id）@ 25°C	包装方式	系列	其他名称	FET类型	FET特性	最大功率	导通电阻 Rds(on) (最大) @ Id, Vgs	输入电容（Ciss）（最大）@ Vds	安装类型	封装形式	供应商器件封装	海关税号	晶体管类型	最大功耗	重量	引脚数	工作温度	工厂包装数量	制造商全称
2N7636-GA TRANS SJT 650V 4A TO-257 TRANS SJT 650V 4A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C GeneSiC Semiconductor	10	8: ¥1,428.748	2	No	650V	4A (Tc) (165°C)	Tube	2N76	1242-1147	Silicon Carbide, Normally Off	Super Junction	7W	415 mOhm @ 4A	324pF @ 35V	Surface Mount	TO-276AA	TO-276	-	-	-	-	-	-	10	GeneSiC Semiconductor
2 2N7635-GA TRANS SJT 650V 4A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C SIC JUNCTION TRANS, 650V, 7NA, TO-257-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C GeneSiC Semiconductor	10	1: ¥1,597.32	2	No	650V	4A (Tc) (165°C)	Bulk	2N76	1242-1146	Silicon Carbide, Normally Off	Super Junction	7W	415 mOhm @ 4A	324pF @ 35V	Through Hole	TO-257-3	TO-257	85412900	:JFET	:7W	0	:3	:250°	-	-
2 2N7638-GA TRANS SJT 650V 8A TO-257 TRANS SJT 650V 8A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 8A 225 Degree C SIC JUNCTION TRANS, 650V, 8A, TO-276-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 8A 225 Degree C GeneSiC Semiconductor	10	1: ¥1,947.90	2	No	650V	8A (Tc) (158°C)	Bulk	2N76	1242-1149	Silicon Carbide, Normally Off	Super Junction	11W	170 mOhm @ 8A	720pF @ 35V	Surface Mount	TO-276AA	TO-276	85412900	:JFET	:11W	0	:3	:250°	-	-
2 2N7637-GA TRANS SJT 650V 7A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 7A 225 Degree C SIC JUNCTION TRANS, 650V, 7A, TO-257-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 7A 225 Degree C GeneSiC Semiconductor	10	1: ¥2,002.26	2	No	650V	7A (Tc) (165°C)	Tube	2N76	1242-1148	Silicon Carbide, Normally Off	Super Junction	8W	170 mOhm @ 7A	720pF @ 35V	Through Hole	TO-257-3	TO-257	85412900	:JFET	:8W	0	:3	:250°	-	-
2N7640-GA TRANS SJT 650V 16A TO-257 TRANS SJT 650V 16A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 16A 225Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 16A 225Degree C GeneSiC Semiconductor	10	8: ¥1,880.88	2	No	650V	16A (Tc) (155°C)	Bulk	2N76	1242-1151	Silicon Carbide, Normally Off	Super Junction	27W	105 mOhm @ 16A	1534pF @ 35V	Surface Mount	TO-276AA	TO-276	-	-	-	-	-	-	10	GeneSiC Semiconductor
2N7639-GA TRANS SJT 650V 15A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 15A 225Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 15A 225Degree C GeneSiC Semiconductor	10	8: ¥1,917.056	2	No	650V	15A (Tc) (155°C)	Bulk	2N76	1242-1150	Silicon Carbide, Normally Off	Super Junction	22W	105 mOhm @ 15A	1534pF @ 35V	Through Hole	TO-257-3	TO-257	-	-	-	-	-	-	10	GeneSiC Semiconductor
2 GA05JT12-263 TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-263 MOSFET 1200V 15A Standard GeneSiC Semiconductor	101	1: ¥76.50	50	Lead free / RoHS Compliant	:1.2kV	:5A	:Each	*	-	-	-	-	-	-	-	-	-	85412900	:JFET	:58W	0	:3	:175°	-	-
2 GA10JT12-263 TRANS SJT 1.2KV 10A SIC JUNCTION TRANS, 1.2KV, 10A, TO-263 MOSFET 1200V 25A Standard GeneSiC Semiconductor	82	1: ¥134.368	50	Lead free / RoHS Compliant	:1.2kV	:10A	:Each	*	-	-	-	-	-	-	-	-	-	85412900	:JFET	:94W	0	:3	:175°	-	-