芯天下
Fairchild Semiconductor International, Inc.

Fairchild Semiconductor International, Inc.- 光电断续器

飞兆半导体(仙童半导体)于1957年在美国加利福尼亚州帕洛阿尔托成立,是全球半导体行业的先驱之一。总部设在加利福尼亚州圣何塞,该公司逐步发展为领先的功率模拟、功率分立及光电元件全球供应商。其产品线涵盖功率MOSFET、IGBT、二极管、整流器、稳压器和电机控制IC等功率管理解决方案。公司以“功率特许经营®”(The Power Franchise®)品牌著称,专注于系统能效优化。核心产品系列包括PowerTrench® MOSFET、Hyperfast™二极管和智能功率模块。应用市场覆盖汽车、工业、消费电子、计算机和通信领域,尤其在节能应用中占据重要地位。在全球电子元器件市场中,飞兆半导体曾是功率分立器件领域的头部企业,拥有领先的市场份额和技术优势。通过持续投入先进材料科学与供应链创新,公司在LED照明、移动设备和汽车电子等领域推动了能效提升。2016年9月,飞兆半导体被安森美半导体(现onsemi)收购,成为其功率管理业务的重要组成部分。

02
MODELS

光电断续器 - 型号列表19 个型号

Series

Maximum Light Current

Package / Case

Package/Case

Other Names

Part # Aliases

Lens Dimensions

Factory Pack Quantity

Supplier Package

Half Intensity Angle Degrees

Wavelength

封装/外壳

Light Current

Package

Maximum Collector Current

Half Intensity Angle Degrees

Standard Package

Fall Time

Rise Time

Standard Package Name

Maximum Collector Current

Package Height

Current - Collector (Ic) (Max)

Package Type

Type

Peak Wavelength

Maximum Power Dissipation

Maximum Dark Current

Collector- Emitter Voltage VCEO Max

Peak Wavelength

Voltage - Collector Emitter Breakdown (Max)

Viewing Angle

Unit Weight

Maximum On-State Collector Current

Tariff No.

Half-Intensity Angle

Operating Temp Range

电流 - 集电极 (Ic)(最大值)

Package Width

Package Length

Lens Color

Maximum Rise Time

Maximum Operating Temperature

Minimum Operating Temperature

Minimum Operating Temperature

Maximum Collector Emitter Saturation Voltage

Maximum Power Dissipation

Maximum Fall Time

Maximum Collector Emitter Voltage

Maximum Rise Time

Power - Max

视角

功率 - 最大值

波长

Lead Shape

Collector-Emitter Voltage

Power Dissipation

Collector Current (DC)

频谱范围内的灵敏度

高度

长度

尺寸

检测到的最大波长

Lens Shape Type

Viewing Orientation

Packaging

Maximum Dark Current

Maximum Operating Temperature

Current - Dark (Id) (Max)

Orientation

Mounting Type

取向

电流 - 暗 (Id)(最大值)

装配类型

电压 - 集射极击穿(最大值)

Mounting

Weight (kg)

Operating Temperature Classification

Lens Type

Collector-Emitter Sat Volt (max)

Dark Current

典型上升时间

半感光角度

宽度

封装类型

针数目

典型下降时间

集电极电流

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Life

制造商零件编号价格/库存Standard PackageRoHSCollector- Emitter Voltage VCEO MaxMaximum Operating TemperatureMinimum Operating TemperaturePackagingMounting TypeSeriesrohsTypePackage / CaseCurrent - Dark (Id) (Max)OrientationVoltage - Collector Emitter Breakdown (Max)WavelengthPackage/CaseProduct CategoryMaximum Power DissipationMaximum Dark CurrentFactory Pack QuantityPhototransistor TypePolarityFall TimeRise TimeMaximum Light Current Minimum Operating Temperature Maximum Collector Emitter Saturation Voltage EU RoHSNumber of Channels per ChipMaximum Dark Current Peak Wavelength Maximum Collector Emitter Voltage Supplier PackageStandard Package NameMaximum Operating Temperature Pin CountViewing AnglePower - MaxUnit WeightMaximum Power Dissipation Maximum Fall Time Half Intensity Angle Degrees Maximum Emitter Collector Voltage Maximum Rise Time PackagePeak WavelengthLens ColorLens Shape TypeLens DimensionsViewing OrientationMaximum Collector Current Maximum Emitter Collector VoltageMaximum Rise TimeMountingHalf Intensity Angle DegreesCut-off FilterCollector-Emitter VoltageOperating Temp RangePackage TypeLight CurrentNumber of ElementsOperating Temperature ClassificationRad HardenedDark CurrentMaximum Collector CurrentEmitter-Collector Voltage (Max)Half-Intensity AnglePower DissipationCollector-Emitter Sat Volt (max)取向电流 - 暗 (Id)(最大值)封装/外壳装配类型波长PCBPackage Height Other NamesLens TypePart # Aliases视角功率 - 最大值电压 - 集射极击穿(最大值)Lead ShapeCurrent - Collector (Ic) (Max)Dark Current (Max)安装类型针数目通道数目Collector-Emitter Saturation VoltageTransistor PolarityWavelength TypPower ConsumptionNo. of PinsOperating Temperature MaxWeight (kg)Tariff No.Collector Current (DC)电流 - 集电极 (Ic)(最大值)典型上升时间频谱范围内的灵敏度高度宽度典型下降时间长度尺寸最大暗电流检测到的最大波长ProductMaximum On-State Collector CurrentPackage Diameter Input Current MaxLeaded Process CompatibleNo. of Channels检测频谱半感光角度封装类型集电极电流Collector-Emitter Breakdown VoltagePackage Width Package Length 系列LifeTransistor Case StyleSVHCAngle of Half Sensitivity ±Current Ic TypExternal DepthExternal Length / HeightExternal WidthFall Time tfLead LengthOperating Temperature MinOperating Temperature RangePeak Spectral Response WavelengthStorage Temperature MaxStorage Temperature MinTransistor TypeVoltage VccCollector-emitter voltageMultiplicityViewing angleGross weightWavelength of peak sensitivityLED lensPhotodetector typeCollective package [pcs]spg极性最大光电流Current - Output / ChannelCurrent Transfer Ratio (Min)Current Transfer Ratio (Max)Vce Saturation (Max)Voltage - OutputNumber of ChannelsOutput TypeInput TypeCurrent - DC Forward (If)Voltage - IsolationVoltage - Output (Max)Rise / Fall Time (Typ)Supplier Device PackageOperating TemperatureCurrent - DC Forward (If) (Max)Voltage - Forward (Vf) (Typ)Turn On / Turn Off Time (Typ)输出设备最大正向电压最大输入电流隔离电压最大电流传输比BrandPd - Power Dissipation
QSE122
4
QSE122

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 100 C- 40 CBulkThrough Hole*Lead free / RoHS CompliantIR ChipSide Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA500PhototransistorNPN8 us8 us12000-400.4Compliant110088030Side LookerSide Looker100250°100mW0.004762 oz1008000(Typ)2558000(Typ)2Side Looker880 nmBlack TransparentDomed1.65 mmSide View155 V8000(Typ) ns-25 °Visible Cut-off--------15 mA----Side View100nARadialThrough Hole880nm----QSE122_NL50°100mW30V--------------------------12 mA-----------*----------------------------------------------------
QSD123
5
QSD123

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 100 C- 40 CBulkThrough Hole*Lead free / RoHS CompliantIR ChipT-1 3/4100nATop View30V880nmT 1 3/4Phototransistors100 mW100 nA250PhototransistorNPN7 us7 us16000-400.4Compliant110088030T-1 3/4T-1 3/4100224°100mW0.010018 oz1007000(Typ)1257000(Typ)2T-1 3/4880 nmBlack TransparentDomed4.95 mmTop View255 V7000(Typ) nsThrough Hole24 °Visible Cut-off------------------28.77--QSD123_NL---Through Hole------:NPN:880nm:100mW:2:100°C0.00285365005-------------6.1(Max):100µA:Yes:1------------------------------------------------------------
QSB363ZR
4
QSB363ZR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 85 C- 25 CReelSurface MountQSB363Lead free / RoHS CompliantIR ChipT-3/4100nATop View30V940nm2-SMD, Z-BendPhototransistors75 mW100 nA1000PhototransistorNPN15 us15 us1500(Typ)-400.4Compliant110094030T-3/4T-3/485224°75mW0.003175 oz7515000(Typ)24515000(Typ)2T-3/4940 nmBlack TransparentDomed1.91 mmTop View25 V15000(Typ) nsSurface Mount24 °Visible Cut-off30 V-25C to 85CT-3/41500 uA1CommercialNo100 nA2 mA5 V24 deg0.075 W0.4 VTop View100nA2-SMD, Z-BendSurface Mount940nm--QSB363ZRCTBlack Transparent-24°75mW30V-2mA100 nA表面安装21--------0.002 A2mA15µs940 nm3mm2.2mm15µs2.7mm2.7 x 2.2 x 3mm100nA940nm------红外12 °超微型1.5mA--------------------------------------------------------
QSE114
6
QSE114

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 100 C- 40 CBulkThrough Hole*Lead free / RoHS CompliantIR ChipSide Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA500PhototransistorNPN8 us8 us1000(Min)-400.4Compliant110088030Side LookerSide Looker100250°100mW0.004762 oz1008000(Typ)2558000(Typ)2Side Looker880 nmBlack TransparentDomed1.65 mmSide View55 V8000(Typ) nsThrough Hole50 °Visible Cut-off30 V-40C to 100CSide Looker1000 uA1IndustrialNo100 nA-5 V50 deg0.1 W0.4 V--------Black TransparentQSE114_NL-----100 nA----:NPN:880nm:100mW:2:100°C0.00285414090--------------:100µA:Yes:1------------------------------------------------------------
QSB363YR
QSB363YR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 85 C- 25 CReelSurface MountQSB363Lead free / RoHS CompliantIR ChipT-3/4100nATop View30V940nmT 3/4Phototransistors75 mW100 nA1000PhototransistorNPN15 us15 us1500(Typ)-400.4Compliant110094030T-3/4T-3/485224°75mW0.003175 oz7515000(Typ)24515000(Typ)2T-3/4940 nmBlack TransparentDomed1.91 mmTop View25 V15000(Typ) ns-24 °Visible Cut-off--------2 mA-----------QSB363YRCT------------------------------------------------------------------------------------------------
QSD124
5
QSD124

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 100 C- 40 CBulkThrough Hole*Lead free / RoHS CompliantIR ChipT-1 3/4100nATop View30V880nmT 1 3/4Phototransistors100 mW100 nA250PhototransistorNPN7 us7 us6000(Min)-400.4Compliant110088030T-1 3/4T-1 3/4100224°100mW0.010018 oz1007000(Typ)1257000(Typ)2T-1 3/4880 nmBlack TransparentDomed4.95 mmTop View255 V7000(Typ) nsThrough Hole24 °Visible Cut-off30 V-40C to 100CT-1 3/46000 uA1IndustrialNo100 nA-5 V24 deg0.1 W0.4 V-----28.77-Black TransparentQSD124_NL---Through Hole-100 nA----:NPN:880nm:100mW:2:100°C0.002854110000.025 A------------6.1(Max):100µA:Yes:1------------------------------------------------------------
QSD124A4R0
2
QSD124A4R0

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 100 C- 40 CReelThrough HoleQSD124Lead free / RoHS CompliantIR ChipT-1 3/4100nATop View30V880 nmT 1 3/4Phototransistors100 mW100 nA1200PhototransistorNPN7 us7 us6000(Min)-400.4Compliant110088030T-1 3/4T-1 3/4100224°100mW0.010018 oz1007000(Typ)1257000(Typ)2T-1 3/4880 nmBlack TransparentDomed4.95 mmTop View255 V7000(Typ) nsThrough Hole-Visible Cut-off30 V-40C to 100CT-1 3/46000 uA1IndustrialNo100 nA25 mA5 V24 deg0.1 W0.4 V-----28.77QSD124A4R0CTBlack TransparentQSD124A4R0_NL---Through Hole-100 nA-----------0.025 A------------6.1(Max)---------------------------------------------------------------
QSB363
5
QSB363

T-3- 4 PHOTOTRANSISTOR DETECTOR

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 85 C- 40 CBulkSurface MountQSB363Lead free / RoHS CompliantIR ChipT-3/4100nATop View30V940 nmT 3/4Phototransistors75 mW-1000PhototransistorNPN15 us15 us1500(Typ)-400.4Compliant110094030T-3/4T-3/485224°75mW0.003175 oz7515000(Typ)24515000(Typ)2T-3/4940 nmBlack TransparentDomed1.91 mmTop View25 V15000(Typ) nsSurface Mount24 °Visible Cut-off30 V-25C to 85CT-3/41500 uA1CommercialNo100 nA2 mA5 V24 deg0.075 W0.4 VTop View100nAT 3/4Surface Mount940nm---Black Transparent-24°75mW30V--100 nA表面安装210.4 V-------0.002 A-15µs940 nm3mm2.2mm15µs2.7mm2.7 x 2.2 x 3mm100nA940nmPhototransistors-----红外12 °超微型1.5mA30 V-------------------------------------------------------
QSB320TR
QSB320TR

Phototransistor IR Chip Silicon 880nm 2-Pin PLCC T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 100 C- 55 CReelSurface Mount*Lead free / RoHS CompliantIR ChipPLCC-2200nATop View35V880nm2-PLCCPhototransistors165 mW200 nA2000PhototransistorNPN8 us8 us16-550.3Compliant120088035PLCCPLCC1002120°165mW0.004540 oz1658000(Typ)12058000(Typ)2PLCC880 nm-Flat2.4 mmTop View155 V8000(Typ) nsSurface Mount120 °-35 V-55C to 100CPLCC16 uA1IndustrialNo200 nA15 mA5 V120 deg0.165 W0.3 VTop View200nA2-PLCCSurface Mount880nm22.1(Max)QSB320TRCT--120°165mW35VJ-Lead15mA------------0.015 A15mA----------16 uA---------3(Max)3.4(Max)*----------------------------------------------------
QSB363GR
4
QSB363GR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 85 C- 25 CReelSurface MountQSB363Lead free / RoHS CompliantIR ChipT-3/4100nATop View30V940nm2-SMD, Gull WingPhototransistors75 mW100 nA1000PhototransistorNPN15 us15 us1500(Typ)-400.4Compliant110094030T-3/4T-3/485224°75mW0.003175 oz7515000(Typ)24515000(Typ)2T-3/4940 nmBlack TransparentDomed1.91 mmTop View25 V15000(Typ) ns-24 °Visible Cut-off--------2 mA----Top View100nA2-SMD, Gull WingSurface Mount940nm--QSB363GRCT--24°75mW30V-2mA-表面安装21---------2mA15µs940 nm3mm2.2mm15µs2.7mm2.7 x 2.2 x 3mm100nA940nm------红外12 °超微型1.5mA--------------------------------------------------------
QSE113E3R0
2
QSE113E3R0

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 100 C- 40 CReelThrough HoleQSE113Lead free / RoHS CompliantIR ChipSide Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA2000PhototransistorNPN8 us8 us1500-400.4Compliant110088030Side LookerSide Looker100250°100mW0.004762 oz1008000(Typ)2558000(Typ)2Side Looker880 nmBlack TransparentDomed1.65 mmSide View55 V8000(Typ) nsThrough Hole50 °Visible Cut-off30 V-40C to 100CSide Looker1500 uA1IndustrialNo100 nA-5 V50 deg0.1 W0.4 VSide View100nARadialThrough Hole880nm--QSE113E3R0CTBlack TransparentQSE113E3R0_NL50°100mW30V-------------------------------------------------------------------------------------------
+QSE113
7
+QSE113

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价BulkRoHS Compliant30 V+ 100 C- 40 CBulkThrough HoleQSE113Lead free / RoHS CompliantIR ChipSide Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA500PhototransistorNPN8 us8 us1500-400.4Compliant110088030Side LookerSide Looker100250°100mW0.004762 oz1008000(Typ)2558000(Typ)2Side Looker880 nmBlack TransparentDomed1.65 mmSide View55 V8000(Typ) nsThrough Hole25 °Visible Cut-off30 V-40C to 100CSide Looker1500 uA1IndustrialNo100 nA5 mA5 V50 deg0.1 W0.4 V--------Black TransparentQSE113_NL-----100 nA----:NPN:880nm:100mW:2:100°C0.00585414010--------------------------:Side Looking:No SVHC (20-Jun-2013):25°:1.5mA:2.54mm:5.08mm:4.44mm:8µs:12.7mm:-40°C:-40°C to +100°C:880nm:100°C:-40°C:Photo:5V5V150°0.33 g880nmblack with IR filterphototransistor5050--------------------------
KDT00030TR
4
KDT00030TR

Phototransistor Chip 630nm 2-Pin SMD T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant6 V+ 85 C- 40 CReelSurface MountKDT00030TRLead free / RoHS CompliantChipSMD100nATop View60V630 nm2-SMD, No LeadPhototransistors-0.1 uA3000PhototransistorNPN--1100(Typ)-404.6(Typ)Compliant110063060SMDSMD852--0.004540 oz-----2SMD630 nm-Flat1.2x0.8 mmTop View---Surface Mount--60 V-40C to 85CSMD1100 uA1IndustrialNo100 nA-----Top View100nA2-SMD, No LeadSurface Mount630nm20.6-------1.1mA-表面安装214.6 V--------1.1mA-最大为 630 nm0.6mm0.8mm-1.7mm1.7 x 0.8 x 0.6mm100nA630nmPhototransistors----------0.81.7---------------------------NPN1100µA------------------------
QTLP610CPDTR
3
QTLP610CPDTR

Phototransistor IR Chip Silicon 860nm 2-Pin PLCC T/R

fairchild semiconductor

询价Tape & ReelRoHS Compliant30 V+ 85 C- 25 CReelSurface MountQTLP610CPDLead free / RoHS CompliantIR Chip-100nASide View30V860 nm2-SMD, No LeadPhototransistors75 mW-2000PhototransistorNPN15 us15 us500(Typ)-250.4Compliant110086030SMDSMD852160°75mW0.004540 oz7515000(Typ)80515000(Typ)2PLCC860 nmWater ClearDomed2.2x1.1 mmSide View3.55 V15000(Typ) nsSurface Mount80 °-30 V-25C to 85CSMD500 uA1CommercialNo100 nA3.5 mA5 V80 deg0.075 W0.4 V-----21.1(Max)-Transparent----No Lead500µA-表面安装210.4 V---------15µs860 nm1.1mm2.2mm15µs3.2mm3.2 x 2.2 x 1.1mm100nA860nmPhototransistors-----红外80 °-0.5mA30 V2.2(Max)3.2(Max)-----------------------------------------------------
QSD123A4R0
2
QSD123A4R0

T-1 3- 4 SENSOR

fairchild semiconductor

询价1,200RoHS Compliant5 V+ 100 C- 40 CReelThrough HoleQSD123Lead free / RoHS Compliant-T-1 3/4100nATop View30V880nmRadialPhototransistors100 mW100 nA1200PhototransistorNPN--16000-400.4Compliant110088030T-1 3/4T-1 3/4100224°100mW0.010018 oz1007000(Typ)1257000(Typ)--Black Transparent---25--Through Hole---------------Top View100nARadialThrough Hole880nm28.77QSD123A4R0CT--24°100mW30VThrough Hole16mA----0.4 V--------16mA----------16 mA6.1(Max)---------------------------------------------------------------
QSE133
5
QSE133

Phototransistors Phototransistor Darlington Sidelook

Fairchild Semiconductor

询价500RoHS Compliant30 V+ 100 C- 40 CBulkThrough HoleQSE133Lead free / RoHS CompliantPhototransistorSide Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA500--50 us20 us------------50°100mW0.004762 oz--------------------------------------------------:NPN:880nm:100mW:2:100°C0.00285365005------------9 mA-:100µA:Yes:1----30 V---New Product: New from this manufacturer.---------------------------------------------------
QSE214C
QSE214C

Phototransistors OPTO_LIGHTING

Fairchild Semiconductor

询价500RoHS Compliant30 V+ 100 C- 40 CBulkThrough Hole*Lead free / RoHS CompliantIR ChipThin Side Looker100nASide View30V880nmRadialPhototransistors100 mW100 nA500PhototransistorNPN8 us8 us1000(Min)-400.4Compliant110088030Thin Side LookerSide Looker100250°100mW-1008000(Typ)5058000(Typ)--Clear------Through Hole--------------------25.71------Through Hole-----------------------------------2.264.44-End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.---------------------------------------------------
FODM8801AV
3
FODM8801AV

OPTOCOUPLER TRANS 4MINIFLAT

Fairchild Semiconductor

询价3,000RoHS Compliant75 V+ 125 C- 40 CBulkSurface MountFODM8801Lead free / RoHS CompliantPhototransistorMiniFlat-4----4-SOIC (0.170", 4.40mm)-40 mW100 nA---5.5 us5 us-------------------------------------------------------------表面安装410.4 V---------5µs---5.5µs----Phototransistors-------Mini-Flat-130 V-------------------------------30mA35% @ 1mA230% @ 1mA400mV75V1TransistorDC20mA3750Vrms75V5µs, 5.5µs4-Mini-Flat-40°C ~ 125°C20mA1.35V6µs, 6µs晶体管1.8V20 mA3750 V 有效值交流230%Fairchild Semiconductor40 mW
KDT00030ATR
KDT00030ATR

Phototransistors Phototransistor Photo Detector

Fairchild Semiconductor

询价3,000RoHS Compliant6 V+ 85 C- 40 CReelSurface MountKDT00030Lead free / RoHS CompliantPhotodetector TransistorChipLED100nATop View6V630 nm---40 nA---------------------------------------------------------KDT00030ATRTR------1.1mA----4.6 V------------------Phototransistors-----------------------------------------------------------------
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