芯天下
Fairchild Semiconductor International, Inc.

Fairchild Semiconductor International, Inc.- 场效应晶体管(FET)

飞兆半导体(仙童半导体)于1957年在美国加利福尼亚州帕洛阿尔托成立,是全球半导体行业的先驱之一。总部设在加利福尼亚州圣何塞,该公司逐步发展为领先的功率模拟、功率分立及光电元件全球供应商。其产品线涵盖功率MOSFET、IGBT、二极管、整流器、稳压器和电机控制IC等功率管理解决方案。公司以“功率特许经营®”(The Power Franchise®)品牌著称,专注于系统能效优化。核心产品系列包括PowerTrench® MOSFET、Hyperfast™二极管和智能功率模块。应用市场覆盖汽车、工业、消费电子、计算机和通信领域,尤其在节能应用中占据重要地位。在全球电子元器件市场中,飞兆半导体曾是功率分立器件领域的头部企业,拥有领先的市场份额和技术优势。通过持续投入先进材料科学与供应链创新,公司在LED照明、移动设备和汽车电子等领域推动了能效提升。2016年9月,飞兆半导体被安森美半导体(现onsemi)收购,成为其功率管理业务的重要组成部分。

02
MODELS

场效应晶体管(FET) - 型号列表1,859 个型号

Other Names

Supplier Device Package

Package

Maximum Continuous Drain Current

RDS-on

Current - Continuous Drain (Id) @ 25° C

Rds On (Max) @ Id, Vgs

Continuous Drain Current

Continuous Drain Current Id

Maximum Power Dissipation

Package Type

Weight (kg)

Series

Input Capacitance (Ciss) @ Vds

Package/Case

Unit Weight

Part # Aliases

Maximum Drain Source Resistance

Maximum Continuous Drain Current

Drain Current (Max)

Drain-Source On-Res

On Resistance Rds(on)

Threshold Voltage Vgs

SMD Marking

Gate Charge (Qg) @ Vgs

Supplier Package

Package / Case

Power - Max

Power Dissipation

Power Dissipation Pd

Voltage Vgs Max

Typical Turn-On Delay Time

Typical Turn-Off Delay Time

Standard Package Name

Dimensions

Height

Width

Vgs(th) (Max) @ Id

Maximum Drain Source Resistance

Typical Input Capacitance @ Vds

Drain Source Voltage Vds

Pulse Current Idm

Voltage Vds Typ

Length

Factory Pack Quantity

Maximum Drain Source Voltage

Drain to Source Voltage (Vdss)

Maximum Power Dissipation

Drain-Source On-Volt

Current Id Max

Voltage Vgs th Max

Typical Fall Time

Rds On

Typical Gate Charge @ Vgs

Peak Average Forward Current

Peak Forward Voltage

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Voltage

Forward Voltage VF Max

Diode Case Style

Maximum Drain Source Voltage

Transistor Case Style

Voltage Vgs Rds on Measurement

Typical Rise Time

Fall Time

Drain-Source Breakdown Voltage

Forward Transconductance - Min

Maximum Continuous Forward Current

Packaging

Peak Forward Voltage

Package Length

Pin Count

Forward Surge Current Ifsm Max

Peak Reverse Recovery Time

Reverse Recovery Time (trr)

Rev Recov Time

Reverse Recovery Time trr Max

External Length / Height

Transistor Polarity

Rds(on) Test Voltage Vgs

Rise Time

Configuration

Peak Reverse Current

Peak Non-Repetitive Surge Current

Operating Temperature

Standard Package

Peak Reverse Current

Peak Non-Repetitive Surge Current

Operating Junction Temperature

Thermal Resistance

Operating Temperature - Junction

Operating Temp Range

Peak Non-Repetitive Surge Current (Max)

Avg. Forward Curr (Max)

No. of Pins

Type

Peak Reverse Recovery Time

Maximum Continuous Forward Current

Maximum Operating Temperature

Minimum Operating Temperature

Peak Non-Repetitive Forward Surge Current

Rectifier Type

Current If @ Vf

Operating Temperature Range

Reverse Recovery Time trr Typ

Device Marking

Peak Reverse Repetitive Voltage

Lead Shape

Peak Reverse Repetitive Voltage

Minimum Operating Temperature

Voltage - DC Reverse (Vr) (Max)

Capacitance @ Vr, F

Current - Average Rectified (Io)

Speed

Peak Rep Rev Volt

Rev Curr

Diode Configuration

Repetitive Reverse Voltage Vrrm Max

Forward Current If(AV)

Operating Temperature Min

Tariff No.

Current Ifsm

Forward Current If Max

Power Dissipation Ptot Max

Product Category

Forward Voltage Drop

Recovery Time

Max Surge Current

Forward Continuous Current

Maximum Gate Source Voltage

Maximum Gate Source Voltage

FET Type

Gate-Source Voltage (Max)

External Depth

External Width

Package Width

Package Height

Mounting

Maximum Operating Temperature

Package Diameter

PCB

Mounting Type

Operating Temperature Classification

Operating Temperature Max

MSL

SVHC

Alternate Case Style

External Diameter

Junction Temperature Tj Max

Peak Forward Current

Mounting Style

RoHS

Channel Type

Number of Elements per Chip

FET Feature

Category

Polarity

Number of Elements

No. of Transistors

Tape Width

Gate-Source Breakdown Voltage

Termination Type

制造商零件编号价格/库存PackageOperating TemperatureMountingStandard PackagePackagingPin CountMounting TypeSupplier Device PackagerohsPackage TypeWeight (kg)Tariff No.ConfigurationPackage/CaseOperating Temp RangeOperating Temperature ClassificationRad HardenedNo. of PinsOperating Temperature MaxMSLSVHCTypeSupplier PackageEU RoHSOther NamesOperating Temperature MinMaximum Operating TemperatureMinimum Operating TemperatureMaximum Operating Temperature Minimum Operating Temperature Maximum Power Dissipation Standard Package NameLead ShapeOperating Temperature RangeDimensionsHeightLengthWidthChannel ModeMaximum Drain Source VoltageMaximum Continuous Drain CurrentRDS-onMaximum Gate Source VoltageFET FeatureCurrent - Continuous Drain (Id) @ 25° CVgs(th) (Max) @ IdRds On (Max) @ Id, VgsFET TypePower - MaxDrain to Source Voltage (Vdss)Input Capacitance (Ciss) @ VdsPower DissipationContinuous Drain CurrentTransistor PolarityContinuous Drain Current IdDrain Source Voltage VdsOn Resistance Rds(on)Rds(on) Test Voltage VgsThreshold Voltage VgsExternal Length / HeightProduct CategoryFactory Pack QuantitySeriesPackage / CaseUnit WeightMounting StyleRoHSGate-Source Voltage (Max)Drain-Source On-ResPolarityNumber of ElementsDrain-Source On-VoltPower Dissipation PdTransistor Case StyleDELETEDPart # AliasesMaximum Gate Source Voltage Channel TypeMaximum Drain Source Resistance Maximum Drain Source Voltage Number of Elements per ChipMaximum Continuous Drain Current Drain Current (Max)Frequency (Max)Output Power (Max)Noise FigureDrain EfficiencyPower GainSMD MarkingVoltage Vds TypVoltage Vgs Rds on MeasurementTypical Turn-On Delay TimeTypical Rise TimeTypical Turn-Off Delay TimeGate Charge (Qg) @ VgsCategoryMaximum Drain Source ResistanceMaximum Power DissipationTypical Input Capacitance @ VdsCurrent TemperatureExternal DepthExternal WidthFull Power Rating TemperatureNo. of TransistorsPulse Current IdmVoltage Vgs MaxPeak Reverse Repetitive VoltagePeak Average Forward CurrentPeak Reverse CurrentPeak Forward VoltagePeak Non-Repetitive Surge CurrentCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfVoltage - DC Reverse (Vr) (Max)SpeedDiode TypePeak Non-Repetitive Surge Current (Max)Peak Rep Rev VoltRev CurrForward VoltageAvg. Forward Curr (Max)Repetitive Reverse Voltage Vrrm MaxForward Current If(AV)Forward Voltage VF MaxForward Surge Current Ifsm MaxDiode Case StyleVoltage Vgs th MaxTypical Fall TimeGate-Source Breakdown VoltageRds OnDrain-Source Breakdown VoltagePeak Reverse Recovery TimeReverse Recovery Time (trr)Rev Recov TimeReverse Recovery Time trr MaxCurrent Id MaxTape WidthFall TimeRise TimeTypical Gate Charge @ VgsPCBPackage Length Thermal ResistanceOperating Temperature - JunctionCurrent - Average Rectified (Io)Diode ConfigurationCurrent IfsmJunction Temperature Tj MaxReverse Recovery Time trr TypForward Transconductance - MinTermination TypeMaximum Continuous Forward Current Peak Reverse Repetitive Voltage Peak Reverse Current Peak Non-Repetitive Surge Current Operating Junction Temperature Peak Forward Voltage Rectifier TypeCapacitance @ Vr, FPeak Reverse Recovery Time Maximum Continuous Forward CurrentPeak Non-Repetitive Forward Surge CurrentCurrent If @ VfForward Current If MaxPower Dissipation Ptot MaxDevice MarkingPackage Diameter Peak Forward CurrentForward Voltage DropRecovery TimeMax Surge CurrentForward Continuous CurrentPackage Width Package Height Alternate Case StyleExternal DiameterCurrent - Average Rectified (Io) (per Diode)Application CodeJunction Temperature Tj MinJunction to Case Thermal Resistance AOn State Resistance @ Vgs = 4.5VOn State resistance @ Vgs = 10VTabCurrent IfrmLead SpacingVoltage Vgs th MinProductReverse VoltageReverse Current IRContinuous Drain Current Id, N ChannelDrain Source Voltage Vds, N ChannelModule ConfigurationOn Resistance Rds(on), N ChannelUni / Bi Directional PolarityVoltage VdsReel QuantityESD HBMCaseTransistor typePowerDrain-source voltagePolarisationDrain currentMultiplicityGross weightCollective package [pcs]spg
1N4002
6
1N4002

Diode 100V 1A 2-Pin DO-41 T/R

fairchild semiconductor

询价2DO-41-55 to 175 °CThrough HoleCut TapeTape and Reel2Through HoleDO-41Lead free / RoHS CompliantDO-410.000585411000SingleDO-204AL, DO-41, Axial-55C to 175CMilitaryNo:2:175°C:-:No SVHC (16-Dec-2013)-DO-41Compliant1N4002FSCT:-55°C--175-553000DO-204-ALThrough Hole-----------------------------------------Compliant-------------------------------100 V1@Ta=75C A5 uA1.1 V30 A5µA @ 100V1.1V @ 1A100VStandard Recovery >500ns, > 200mA (Io)Standard3010051.11:100V:1A:1.1V:30A:DO-204AL--------------25.21(Max)50°C/W Ja-55°C ~ 175°C1A:Single-----1@Ta=75C100530-55 to 1751.1-15pF @ 4V, 1MHz-------2.72(Max)----------------------------------------
1N4148
6
1N4148

Diode Small Signal Switching 100V 0.3A 2-Pin DO-35 Bulk

fairchild semiconductor

询价2DO-35-65 to 175 °CThrough HoleBulkBulk2Through HoleDO-35Lead free / RoHS CompliantDO-350.00013785411000SingleDO-204AH, DO-35, Axial-65C to 175CMilitaryNo:2:175°C:-:No SVHC (20-Jun-2013)Small Signal Switching DiodeDO-35Compliant1N4148FS:-65°C+175 °C-65 °C175-65500DO-204-AHThrough Hole:-65°C to +175°C1.91 x 4.56 x 1.91mm1.91mm4.56mm1.91mm---------------------:4.25mm--------------Compliant-------------------------------100 V0.3 A5@75V uA1@0.01A V4 A5µA @ 75V1V @ 10mA100VSmall Signal =Standard4100510.3:100V:200mA:1V:1A:DO-35-----4 ns4ns4:4ns-----24.56(Max)300°C/W Ja-65°C ~ 175°C200mA-:1A:175°C:4ns--0.31005@75V4-65 to 1751@0.01ASwitching4pF @ 0V, 1MHz40.3A0.004kA:10mA:10mA:500mW-1.91(Max):300mA------:SOD-27:1.85mm-:HS-----------------------------
1N4148TR
6
1N4148TR

Diode Small Signal Switching 100V 0.3A 2-Pin DO-35 T/R

fairchild semiconductor

询价2DO-35-65 to 175 °CThrough HoleTape & ReelTape & Reel (TR)2Through HoleDO-35Lead free / RoHS CompliantDO-35085411000SingleDO-204AH, DO-35, Axial-65C to 175CMilitaryNo----Small Signal Switching Diode----+ 175 C- 65 C--------------------------------Diodes - General Purpose, Power, Switching100001N4148DO-350.004445 ozThrough HoleRoHS Compliant-------Compliant1N4148TR_NL------------------------------100 V0.3 A5@75V uA1@0.01A V4 A5µA @ 75V1V @ 10mA100VSmall Signal =Standard4100510.3:100V:200mA:1V:1A:DO-35-----4 ns4ns4:4ns-------300°C/W Ja-65°C ~ 175°C200mA-------------4pF @ 0V, 1MHz---------1 V at 0.01 A4 ns4 A0.3 A-----------------------------------
1N4937
7
1N4937

Diode Switching 600V 1A 2-Pin DO-41 T/R

fairchild semiconductor

询价2DO-41-50 to 150 °CThrough HoleCut TapeTape and Reel2Through HoleDO-41Lead free / RoHS CompliantDO-410.000485411000SingleDO-204AL, DO-41, Axial-50C to 150CAutomotiveNo:2:150°C:-:No SVHC (20-Jun-2013)Switching DiodeDO-41Compliant1N4937FSCT:-50°C--150-502500DO-204-ALThrough Hole:-50°C to +150°C-------------------------:5.2mm--------------Compliant-------------------------------600 V1@Ta=50C A5 uA1.2 V30 A5µA @ 600V1.2V @ 1A600VFast Recovery = 200mA (Io)Standard3060051.21:600V:1A:1.2V:30A:DO-41-----150 ns150ns150:150ns-----25.21(Max)50°C/W Ja-55°C ~ 150°C1A:Single:30A:150°C:150ns--1@Ta=50C600530-50 to 1501.2Switching Diode12pF @ 4V, 1MHz150--:1A-:2.5W-2.72(Max)--------:2.7mm--:-50°C:50°C/W---------------------------
2N7002
7
2N7002

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountCut TapeTape and Reel3Surface MountSOT-23Lead free / RoHS CompliantSOT-230.000585412900SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Small SignalSOT-23Compliant2N7002NCT:-55°C+150 °C-55 °C150-55200SOT-23Gull-wing:-55°C to +150°C2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mmEnhancement60 V0.115 A7500@10V mOhm±20 VLogic Level Gate115mA (Ta)2.5V @ 250µA7.5 Ohm @ 500mA, 10VMOSFET N-Channel, Metal Oxide200mW60V50pF @ 25V0.2 W0.115 A:N Channel:115mA:60V:1.2ohm:10V:2.1V:1.12mm-------�20 V7.5 ohmN160 V:200mW:TO-263AB--±20N7500@10V6010.1150.115 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:702:60V:10V----Small Signal7.5 Ω0.2 W20 pF V @ 25:25°C:2.5mm:3.05mm:25°C:1:800mA:2.1V--------------------:2.5V--------:280mA:8mm-------------------------------------------:5.3ohm:5ohm-------------------------
RHRP1560
6
RHRP1560

Diode Switching 600V 15A 2-Pin(2+Tab) TO-220AC Rail

fairchild semiconductor

询价2TO-220AC-65 to 175 °CThrough HoleRail / TubeRail2Through HoleTO-220ACLead free / RoHS CompliantTO-220AC0.0018685411000SingleTO-220-2-65C to 175CMilitaryNo:2:175°C:-:No SVHC (20-Jun-2013)Switching DiodeTO-220ACCompliant-:-65°C+175 °C-65 °C175-65100000TO-220Through Hole:-65°C to +175°C9.65 x 10.67 x 4.83mm9.65mm10.67mm4.83mm------------------------------------Compliant-------------------------------600 V15 A100 uA2.1 V200 A100µA @ 600V2.1V @ 15A600VFast Recovery = 200mA (Io)Standard2006001002.115:600V:15A:2.1V:200A:TO-220AC-----40 ns40ns40:40ns-----210.67(Max)1.5°C/W Jc-65°C ~ 175°C15A:Single:200A:175°C:35ns--15600100200-65 to 1752.1Switching-4015A0.2kA----------4.83(Max)9.65(Max)--------Tab:30A-----------------------
HUF75645P3
4
HUF75645P3

Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB Rail

fairchild semiconductor

询价3TO-220AB-55 to 175 °CThrough HoleRail / TubeTube3 +TabThrough HoleTO-220ABLead free / RoHS CompliantTO-220AB0.00285411000Single--55C to 175CMilitaryNo:3---Power MOSFET----+ 175 C- 55 C----------Enhancement100 V75 A14@10V mOhm±20 VLogic Level Gate75A (Tc)4V @ 250µA14 mOhm @ 75A, 10VMOSFET N-Channel, Metal Oxide310W100V3790pF @ 25V310 W75 AN-Channel:75A:100V:14mohm:10V:4V-MOSFET400HUF75645P3TO-220-30.063493 ozThrough HoleRoHS Compliant�20 V0.014 ohmN1100 V---HUF75645P3_NL------75 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB---14 ns117 ns41 ns238nC @ 20V--------------------------------97 ns+/- 20 V14 mOhms100 V------97 ns117 ns--------------------------------------------------------------------
BAV70
9
BAV70

Diode Small Signal Switching 70V 0.2A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountCut TapeTape & Reel (TR)3Surface MountSOT-23-3 (TO-236)Lead free / RoHS CompliantSOT-230.000585411000Dual Common CathodeTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Small Signal Switching Diode--BAV70FSTR-+150 °C-55 °C------2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mm---------------------:1.12mmDiodes - General Purpose, Power, Switching3000BAV70SOT-230.000882 ozSMD/SMTRoHS Compliant-------CompliantBAV70_NL------------:A4-----------:2.5mm:3.05mm----70 V0.2 A5 uA1.25@0.15A V2 A5µA @ 70V1.25V @ 150mA70VSmall Signal =Standard27051.250.2:70V:200mA:1.25V:2A:SOT-23-----6 ns6ns6:6ns----------1 Pair Common Cathode:1A:150°C:6ns--------Small Signal Diode--0.2A0.002kA:100mA:50mA:350mW--:600mA1.25 V at 0.15 A6 ns2 A0.2 A----200mA------------------------------
BAV99
7
BAV99

Diode Small Signal Switching 70V 0.2A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountCut TapeTape and Reel3Surface MountSOT-23-3 (TO-236)Lead free / RoHS CompliantSOT-230.000585411000Dual SeriesTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Small Signal Switching DiodeSOT-23CompliantBAV99FSTR:-55°C--150-55350SOT-23Gull-wing--------------------------:1.12mm--------------Compliant-------------:A7-----------:2.5mm:3.05mm----70 V0.2 A2.5 uA1.25@0.15A V2 A2.5µA @ 70V1.25V @ 150mA70VSmall Signal =Standard2702.51.250.2:70V:200mA:1.25V:8A:SOT-23-----6 ns6ns6:6ns-----32.92---1 Pair Series Connection:1A:150°C:6ns--0.2702.521501.25@0.15A--6--:50mA:50mA:350mW--:600mA----1.30.93--200mA------------------------------
BS170
9
BS170

Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Bulk

fairchild semiconductor

询价3TO-92-55 to 150 °CThrough HoleBulkBulk3Through HoleTO-92-3Lead free / RoHS CompliantTO-920.000285412900SingleTO-226-3, TO-92-3 (TO-226AA)-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (20-Jun-2013)Power MOSFETTO-92Compliant-:-55°C+150 °C-55 °C150-55830TO-92Through Hole:-55°C to +150°C5.2 x 4.19 x 5.33mm5.33mm5.2mm4.19mmEnhancement60 V0.5 A5000@10V mOhm±20 VStandard500mA (Ta)3V @ 1mA5 Ohm @ 200mA, 10VMOSFET N-Channel, Metal Oxide830mW60V40pF @ 10V0.83 W0.5 AN-Channel:500mA:60V:1.2ohm:10V:2.1V-MOSFET2000BS170TO-920.007055 ozThrough HoleRoHS Compliant�20 V5 ohmN160 V:830mW:TO-92-BS170_NL±20N5000@10V6010.50.5 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB-:60V:2.1V----Power MOSFET5 Ω0.83 W24 pF V @ 10:25°C--:25°C:1:1.2A:3V--------------------:3V-+/- 20 V1.2 Ohms60 V----:500mA-------------0.32 S:Through Hole--------------:BS170------------------:2.54mm:0.8V---------------------
BSS123
7
BSS123

Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountTape & ReelTape and Reel3Surface MountSOT-23Lead free / RoHS CompliantSOT-230.00003385412900SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (20-Jun-2013)Power MOSFETSOT-23CompliantBSS123NCT:-55°C+150 °C-55 °C150-55360SOT-23Gull-wing:-55°C to +150°C2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mmEnhancement100 V0.17 A6000@10V mOhm±20 VLogic Level Gate170mA (Ta)2V @ 1mA6 Ohm @ 170mA, 10VMOSFET N-Channel, Metal Oxide360mW100V73pF @ 25V0.36 W0.17 AN-Channel:170mA:100V:6ohm:10V:1.7V:2.92mmMOSFET3000BSS123SOT-230.002116 ozSMD/SMTRoHS Compliant�20 V6 ohmN1100 V:360mW:SOT-23CompliantBSS123_NL±20N6000@10V10010.170.17 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:SA:100V:10V1.7 ns9 ns17 ns2.5nC @ 10VPower MOSFET6 Ω0.36 W73 pF V @ 25:25°C:1.2mm:1.3mm:25°C:1:680mA:1.7V--------------------:2V2.4 ns+/- 20 V6 Ohms100 V----:170mA:8mm9 ns9 ns1.8 nC V @ 10---------0.8 S---------------:BSS123-----------------------------------------
BSS138
9
BSS138

Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountTape & ReelTape and Reel3Surface MountSOT-23Lead free / RoHS CompliantSOT-230.000585411000SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETSOT-23CompliantBSS138TR:-55°C+150 °C-55 °C150-55360SOT-23Gull-wing:-55°C to +150°C2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mmEnhancement50 V0.22 A3500@10V mOhm±20 VLogic Level Gate220mA (Ta)1.5V @ 1mA3.5 Ohm @ 220mA, 10VMOSFET N-Channel, Metal Oxide360mW50V27pF @ 25V0.36 W0.22 A:N Channel:220mA:50V:0.7ohm:10V:1.3V:1.12mm-------�20 V3.5 ohmN150 V:360mW:SOT-23--±20N3500@10V5010.220.22 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:SS:50V:10V2.5 ns9 ns20 ns2.4nC @ 10VPower MOSFET3.5 Ω0.36 W27 pF V @ 25:25°C:2.5mm:3.05mm:25°C:1:880mA---------------------:1.5V7 ns-------:220mA:8mm--1.7 nC V @ 10----------:SMD--------------:BSS138-----------------------------------------
BSS84
8
BSS84

Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountTape & ReelTape and Reel3Surface MountSOT-23Lead free / RoHS CompliantSOT-230.000585412100SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETSOT-23CompliantBSS84TR:-55°C+150 °C-55 °C150-55360SOT-23Gull-wing:-55°C to +150°C2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mmEnhancement50 V0.13 A10000@5V mOhm±20 VLogic Level Gate130mA (Ta)2V @ 1mA10 Ohm @ 100mA, 5VMOSFET P-Channel, Metal Oxide360mW50V73pF @ 25V0.36 W0.13 AP-Channel:-130mA:-50V:1.2ohm:-5V:-1.7V:1.12mmMOSFET3000BSS84SOT-230.002116 ozSMD/SMTRoHS Compliant�20 V10 ohmP150 V:360mW:SOT-23-BSS84_NL±20P10000@5V5010.130.13 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:SP:-50V:-5V2.5 ns6.3 ns10 ns1.3nC @ 5VPower MOSFET10 Ω0.36 W73 pF V @ 25:25°C:2.5mm:3.05mm:25°C:1:520mA:-1.7V--------------------:-2V4.8 ns+/- 20 V10 Ohms- 50 V-----:8mm6.3 ns6.3 ns0.9 nC V @ 5---------0.6 S:SMD--------------------------------------------------------
ES1J
9
ES1J

Diode Switching 600V 1A 2-Pin DO-214AC T/R

fairchild semiconductor

询价2DO-214AC-55 to 150 °CSurface MountTape & ReelTape & Reel (TR)2Surface MountSMALead free / RoHS CompliantDO-214AC0.000585411000SingleDO-214AC, SMA-55C to 150CMilitaryNo:2:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Switching DiodeDO-214ACCompliantES1JFSTR-+150 °C-55 °C---DO-214-ACJ-Lead-4.597 x 2.896 x 2.438mm2.438mm4.597mm2.896mm----------------------Rectifiers7500ES1JDO-214AC0.003739 ozSMD/SMTRoHS Compliant-------Compliant-------------------------------600 V1 A5 uA1.7 V30 A5µA @ 600V1.7V @ 1A600VFast Recovery = 200mA (Io)Standard3060051.71:600V:1A:1.7V:30A:DO-214AC-----35 ns35ns35:35ns-----24.75(Max)35°C/W Jl150°C (Max)1A:Single:30A:150°C:35ns-:SMD------Fast Recovery--1A0.03kA-:1mA----1.7 V35 ns30 A1 A2.95(Max)2.2(Max)------------Ultra Fast Recovery Rectifiers600 V5 uA------------------
FDB2532
6
FDB2532

Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R

fairchild semiconductor

询价3D2PAK-55 to 175 °CSurface MountTape & ReelTape and Reel3Surface MountD²PAKLead free / RoHS CompliantTO-263AB0.0185412900SingleTO-263-3, D²Pak (2 Leads + Tab), TO-263AB-55C to 175CMilitaryNo:3:175°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETD2PAKCompliantFDB2532TR:-55°C+175 °C-55 °C175-55310000D2PAKGull-wing:-55°C to +175°C10.67 x 11.33 x 4.83mm4.83mm10.67mm11.33mmEnhancement150 V8 A16@10V mOhm±20 VStandard8A (Ta), 79A (Tc)4V @ 250µA16 mOhm @ 33A, 10VMOSFET N-Channel, Metal Oxide310W150V5870pF @ 25V310 W79 AN-Channel:79A:150V:0.014ohm:10V:4V-MOSFET800FDB2532TO-2630.046296 ozSMD/SMTRoHS Compliant By Exemption�20 V0.016 ohmN1150 V:310W:TO-263AB-FDB2532_NL±20N16@10V150188 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB-:150V:10V16 ns30 ns39 ns107nC @ 10VPower MOSFET0.048 Ω310 W5870 pF V @ 25------:4V---------------------17 ns+/- 20 V14 mOhms150 V----:79A-17 ns30 ns82 nC V @ 10----------:SMD--------------------------------------------------------
FDC6561AN
8
FDC6561AN

Trans MOSFET N-CH 30V 2.5A 6-Pin SuperSOT T/R

fairchild semiconductor

询价6SuperSOT-55 to 150 °CSurface MountTape & ReelTape and Reel6Surface Mount6-SSOTLead free / RoHS CompliantSuperSOT0.0185411000Dual DrainSOT-23-6 Thin, TSOT-23-6-55C to 150CMilitaryNo:6:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETSuperSOTCompliantFDC6561ANTR:-55°C+150 °C-55 °C150-55960--:-55°C to +150°C3 x 1.7 x 1mm1mm3mm1.7mmEnhancement30 V2.5 A95@10V mOhm±20 VLogic Level Gate2.5A3V @ 250µA95 mOhm @ 2.5A, 10V2 N-Channel (Dual)700mW30V220pF @ 15V0.9 W2.5 AN-Channel:2.5A:30V:0.082ohm:10V:1.8V-MOSFET3000FDC6561ANSSOT-60.001270 ozSMD/SMTRoHS Compliant�20 V0.095 ohmN230 V:960mW:SuperSOTCompliantFDC6561AN_NL±20N95@10V3022.52.5 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:FDC6561AN:30V:10V6 ns10 ns12 ns3.2nC @ 5VPower MOSFET0.152 Ω0.96 W220 pF V @ 15:25°C--:25°C:2:10A:1.8V--------------------:3V2 ns+/- 20 V95 mOhms30 V----:2.5A-10 ns10 ns2.3 nC V @ 5---------5 S---------------------------------------:2.5A:30V:Dual:0.082ohm:NN:30V------------
FDD5614P
8
FDD5614P

Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) TO-252 T/R

fairchild semiconductor

询价3TO-252-55 to 175 °CSurface MountTape & ReelTape and Reel3Surface MountTO-252Lead free / RoHS CompliantTO-252185412100SingleTO-252-3, DPak (2 Leads + Tab), SC-63---:3:175°C:-:No SVHC (20-Jun-2013)-TO-252CompliantFDD5614PTR:-55°C+175 °C-55 °C175-5542000DPAKGull-wing:-55°C to +175°C6.73 x 6.22 x 2.39mm2.39mm6.73mm6.22mmEnhancement60 V15 A100@10V mOhm±20 VLogic Level Gate15A (Ta)3V @ 250µA100 mOhm @ 4.5A, 10VMOSFET P-Channel, Metal Oxide1.6W60V759pF @ 30V42 W15 AP-Channel:15A:60V:100mohm:-10V:-1.6V:2.3mmMOSFET2500FDD5614PTO-2520.009184 ozSMD/SMTRoHS Compliant By Exemption-----:45W:TO-252-FDD5614P_NL±20P100@10V60115------:FDD5614P:-60V:-10V7 ns10 ns19 ns24nC @ 10VPower MOSFET0.1 Ω42 W759 pF V @ 30:25°C:9.5mm:6.6mm:25°C:1:45A:-20V--------------------:-3V12 ns+/- 20 V76 mOhms- 60 V----:-15A:16mm12 ns10 ns15 nC V @ 10---------8 S:SMD-----------------------:D-PAK--------------------:2500-----------
FDN337N
9
FDN337N

Trans MOSFET N-CH 30V 2.2A 3-Pin SuperSOT T/R

fairchild semiconductor

询价3SuperSOT-55 to 150 °CSurface MountTape & ReelTape and Reel3Surface Mount3-SSOTLead free / RoHS CompliantSuperSOT0.0185412900SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETSuperSOTCompliantFDN337NTR:-55°C+ 150 C- 55 C150-55500--:-55°C to +150°C----Enhancement30 V2.2 A65@4.5V mOhm±8 VLogic Level Gate2.2A (Ta)1V @ 250µA65 mOhm @ 2.2A, 4.5VMOSFET N-Channel, Metal Oxide460mW30V300pF @ 10V0.5 W2.2 AN-Channel:2.2A:30V:0.054ohm:4.5V:700mV:1.12mmMOSFET3000FDN337NSuperSOT0.001058 ozSMD/SMTRoHS Compliant�8 V0.065 ohmN130 V:500mW:SuperSOT-FDN337N_NL±8N65@4.5V3012.22.2 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:337:30V:4.5V4 ns10 ns17 ns9nC @ 4.5V----:25°C:2.5mm:3.05mm:25°C:1:10A:700mV----------------------+/- 8 V65 mOhms30 V-----:8mm10 ns10 ns----------13 S---------------:FDN337N-----------------------------------------
FDS3890
4
FDS3890

Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R

fairchild semiconductor

询价8SOIC N-55 to 175 °CSurface MountTape & ReelTape & Reel (TR)8Surface MountSO-8Lead free / RoHS CompliantSOIC N0.0000185412900-8-SOIC (0.154", 3.90mm Width)-55C to 175CMilitaryNo:8:175°C:MSL 1 - Unlimited:No SVHC (20-Jun-2013)Power MOSFET--FDS3890CT:-55°C-------:-55°C to +175°C----Enhancement80 V4.7 A44@10V mOhm±20 VLogic Level Gate4.7A4V @ 250µA44 mOhm @ 4.7A, 10V2 N-Channel (Dual)900mW80V1180pF @ 40V2 W4.7 A:Dual N Channel:4.7A:80V:34mohm:10V:2.3V--------�20 V0.044 ohmN280 V:2W:SOIC-----------------11 ns8 ns26 ns35nC @ 10V--------------------------------12 ns-------------------------------------------------------------------------------
FDV302P
8
FDV302P

Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R

fairchild semiconductor

询价3SOT-23-55 to 150 °CSurface MountTape & ReelTape and Reel3Surface MountSOT-23Lead free / RoHS CompliantSOT-230.000585412900SingleTO-236-3, SC-59, SOT-23-3-55C to 150CMilitaryNo:3:150°C:MSL 1 - Unlimited:No SVHC (16-Dec-2013)Power MOSFETSOT-23CompliantFDV302PTR:-55°C+150 °C-55 °C150-55350SOT-23Gull-wing:-55°C to +150°C2.92 x 1.3 x 0.93mm0.93mm2.92mm1.3mmEnhancement25 V0.12 A10000@4.5V mOhm8 VStandard120mA (Ta)1.5V @ 250µA10 Ohm @ 200mA, 4.5VMOSFET P-Channel, Metal Oxide350mW25V11pF @ 10V0.35 W0.12 A:P Channel:-120mA:-25V:7.9ohm:-4.5V:-1V:1.12mm-------8 V10 ohmP125 V:350mW:SOT-23--8P10000@4.5V2510.120.12 ANot Required MHzNot Required WNot Required dBNot Required %Not Required dB:302P:-25V:-4.5V5 ns8 ns9 ns0.31nC @ 4.5VPower MOSFET10 Ω0.35 W11 pF @ 10 V:25°C:2.5mm:3.05mm:25°C:1:500mA:-1V--------------------:-1.5V---------:8mm--0.22 nC @ 4.5 V--------------------------------------------------------:6kVSOT23P-MOSFET350mW-25Vunipolar-120mA10.03 g30003000
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