California Eastern Laboratories- 射频前端模块

California Eastern Laboratories（CEL）总部位于加利福尼亚州圣克拉拉，是一家领先的化合物半导体器件与无线连接产品分销及解决方案供应商。公司拥有超过五十年的行业经验，是瑞萨电子（原NEC电子）化合物半导体产品在美洲的独家销售与市场合作伙伴。其产品线涵盖广泛的射频元件，如GaAs FET、MMIC和RFIC，广泛应用于无线基础设施和移动通信系统。此外，CEL还提供高可靠性光耦合器与固态继电器，服务于工业控制与自动化领域，以及激光二极管和光电探测器，用于光传感与通信。在物联网和嵌入式无线领域，CEL自主设计并生产MeshWorks™和MeshConnect™系列IEEE 802.15.4与ZigBee专业级模块、软件及开发工具。这些解决方案大大简化了智能家居、楼宇自动化和工业物联网等应用中的无线设计，缩短了产品上市时间。CEL的客户群体涵盖OEM、合同制造商和设计公司，覆盖射频与无线、宽带通信、自动测试设备和工业控制市场。公司在圣克拉拉和伊利诺伊州沃康达设有技术中心，保持充足的库存并提供强大的工程与应用支持。通过遍布美洲的销售办事处、代表和分销商网络，CEL能够快速响应客户需求并提供本地化技术支持。凭借与瑞萨的长期战略联盟及自有无线产品，CEL成为连接日本先进半导体技术与美洲市场的关键桥梁。

射频前端模块 - 型号列表

共 37 个型号

制造商零件编号	库存	价格	包装方式	RoHS	频率	封装形式	类型	工作温度	产品类别	安装样式	产品	增益	额定功率	电流传输比（最小）	栅极触发电压 Vgt (最大)	漏极电流（Idss）@ Vds（Vgs=0）	噪声系数	漏源电压（Vdss）	输出电流	标准包装数量	晶体管类型	测试电压	额定电压	最大额定电流	供应商器件封装	其他名称	额定输出功率	1dB压缩点	集电极-发射极饱和电压（最大）@ Vge, Ic	工厂包装数量	供电电压	空闲电流，典型值 @ 25°C	灵敏度	数据接口	数据速率（最大）	接收电流	发射电流	天线连接器	应用	调制或协议	配置
UPG2253T6S-A RF Front End GaAs HJ-FET,RF FEIC 3.0V/95mA CEL	10	1: ¥24.684	Bulk	RoHS Compliant	2.45 GHz	QFN-16	Bluetooth	+ 85 C	RF Front End	SMD/SMT	-	-	-	-	-	-	-	-	95 mA	-	-	-	-	-	-	-	-	-	-	-	3 V	4 uA	-	-	-	-	-	-	-	-	-
UPG2253T6S-E2-A RF Front End GaAs HJ-FET,RF FEIC 3.0V/95mA CEL	10	2155: ¥14.416	Reel	RoHS Compliant	2.45 GHz	QFN-16	Bluetooth	+ 85 C	RF Front End	SMD/SMT	-	-	-	-	-	-	-	-	95 mA	-	-	-	-	-	-	-	-	-	-	-	3 V	4 uA	-	-	-	-	-	-	-	-	-
ZFSM-101-1 Zigbee / 802.15.4 Modules FreeStar Zigbee100mW MODULE ZIGBEE 802.15.4 CEL	-		Bulk	-	2.4GHz ~ 2.4835GHz	PCB Module	-	-40°C ~ 85°C	-	-	-	-	-	-	-	-	-	-	-	50	-	-	-	-	-	-	100mW (20dBm)	-	-	-	2.4 V ~ 3.6 V	-	-92dBm	Pads for Pins	250kbps	42mA	150mA	On-Board, Trace	General Purpose	802.15.4 Zigbee	-
NE3508M04-A Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-TSMM Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET CEL	10	1: ¥13.056	Bulk	RoHS Compliant	2GHz	SOT-343F	GaAs HEMT	+ 150 C	Transistors RF JFET	SMD/SMT	RF JFET	14dB	175 mW	100 mS	- 3 V	120 mA	0.45dB	4 V	10mA	1	HFET	2V	4V	120mA	F4TSMM, M04	NE3508M04A	18dBm	18 dBm	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3512S02-A Transistors RF GaAs C to Ku Band Super Low Noise Amp N-Ch HJ-FET NCH 13.5DB S02 Transistors RF JFET C to Ku Band Super Low Noise Amp N-Ch CEL	10	1: ¥16.252	Bulk	RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5dB	165 mW	55 mS	- 3 V	70 mA	0.35dB	4 V	10mA	1	HFET	2V	4V	70mA	S02	NE3512S02A	-	-	4 V	-	-	-	-	-	-	-	-	-	-	-	-
NE3515S02-A Transistors RF GaAs X to Ku-BAND SUPER LOW NOISE AMP N-CH FET RF HFET 12GHZ 2V 10MA S02 Transistors RF JFET X to Ku-BAND SUPER LOW NOISE AMP N-CH CEL	10	1: ¥25.296	Bulk	RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	12.5dB	165 mW	70 mS	- 3 V	88 mA	0.3dB	4 V	10mA	1	HFET	2V	4V	88mA	S02	NE3515S02A	14dBm	14 dBm	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3512S02-T1C-A Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET HJ-FET NCH 13.5DB S02 Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET CEL	2371	1: ¥8.0294	Tape & Reel (TR)	Lead free / RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5dB	165 mW	55 mS	- 3 V	70 mA	0.35dB	4 V	10mA	2,000	HFET	2V	4V	70mA	S02	NE3512S02-T1C-ACT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3511S02-T1C-A Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET HJ-FET NCH 13.5DB S02 Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET CEL	2000	2000: ¥8.9046	Tape & Reel (TR)	RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5dB	165 mW	65 mS	- 3 V	70 mA	0.3dB	4 V	10mA	2,000	HFET	2V	4V	70mA	S02	-	-	-	-	2000	-	-	-	-	-	-	-	-	-	-	-
NE3503M04-A Transistors RF GaAs Low Noise HJ FET AMP HJ-FET 12GHZ SOT-343 Transistors RF JFET Low Noise HJ FET AMP HJ-FET 12GHZ M04 CEL	10	1: ¥14.756	Bulk	RoHS Compliant	12GHz	SC-82A, SOT-343	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	12dB	125 mW	55 mS	- 3 V	70 mA	0.45dB	4 V	10mA	1	HFET	2V	4V	70mA	SOT-343	NE3503M04A	-	-	- 0.7 V	50	-	-	-	-	-	-	-	-	-	-	-
NE3511S02-A Transistors RF GaAs X to Ku Band Super Low Noise Amp N-Ch HJ-FET NCH 13.5DB S02 Transistors RF JFET X to Ku Band Super Low Noise Amp N-Ch CEL	10	1: ¥21.352	Bulk	RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5dB	165 mW	65 mS	- 3 V	70 mA	0.3dB	4 V	10mA	1	HFET	2V	4V	70mA	S02	NE3511S02A	-	-	- 0.7 V	-	-	-	-	-	-	-	-	-	-	-	-
NE3517S03-A Transistors RF GaAs 20GHz NF .7dB Typ Ga 13.5dB Typ FET RF HJFET 20GHZ 4V 15MA S03 Transistors RF JFET 20GHz NF .7dB Typ Ga 13.5dB Typ CEL	386	1: ¥30.464	Bulk	RoHS Compliant	20GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	-	SMD/SMT	RF JFET	13.5dB	165 mW	55 mS	- 3 V	70 mA	0.7dB	4 V	10mA	1	HFET	2V	4V	15mA	S03	NE3517S03A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3510M04-A Transistors RF GaAs L-S Band Lo No Amp HJ-FET N-CH 4GHZ M04 Transistors RF JFET L-S Band Lo No Amp CEL	10	1: ¥13.736	Bulk	RoHS Compliant	4GHz	SOT-343F	GaAs HEMT	+ 150 C	Transistors RF JFET	SMD/SMT	RF JFET	16dB	125 mW	70 mS	- 3 V	97 mA	0.45dB	4 V	15mA	120	HFET	2V	4V	97mA	M04	NE3510M04A	11dBm	11 dBm	- 0.7 V	50	-	-	-	-	-	-	-	-	-	-	-
NE3210S01 Transistors RF GaAs Super Lo Noise HJFET Transistors RF JFET Super Lo Noise HJFET CEL	10	28: ¥46.784	Cut Tape	RoHS Compliant	12 GHz	SO-1	GaAs pHEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5 dB	165 mW	55 mS	- 3 V	70 mA	0.35 dB	4 V	-	-	-	-	-	-	-	-	-	-	2 V	-	-	-	-	-	-	-	-	-	-	-	-
NE3515S02-T1C-A Transistors RF GaAs Super Low Noise Pseudomorphic FET RF HFET 12GHZ 2V 10MA S02 Transistors RF JFET Super Low Noise Pseudomorphic CEL	888	1: ¥19.788	Tape & Reel (TR)	Lead free / RoHS Compliant	12GHz	4-SMD, Flat Leads	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	12.5dB	165 mW	70 mS	- 3 V	88 mA	0.3dB	4 V	10mA	2,000	HFET	2V	4V	88mA	S02	NE3515S02-T1C-ACT	14dBm	14 dBm	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3509M04-A Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-SMINI Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET CEL	10	1: ¥13.056	Bulk	RoHS Compliant	2GHz	SOT-343F	GaAs HEMT	+ 150 C	Transistors RF JFET	SMD/SMT	RF JFET	17.5dB	150 mW	80 mS	- 3 V	60 mA	0.4dB	4 V	10mA	1	HFET	2V	4V	60mA	M04	NE3509M04A	11dBm	11 dBm	- 0.5 V	50	-	-	-	-	-	-	-	-	-	-	-
NE4503S01-A Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET CEL	10	1: ¥13.94	Bulk	RoHS Compliant	-	-	GaAs	-	Transistors RF JFET	-	RF JFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NE4210S01 Transistors RF GaAs Super Lo Noise HJFET Transistors RF JFET Super Lo Noise HJFET CEL	10	2660: ¥12.784	Bulk	RoHS Compliant	12 GHz	S0-1	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13 dB	165 mW	55 mS	- 3 V	70 mA	0.5 dB	4 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NE552R479A-T1-A Transistors RF GaAs L&S Band Med Power Transistors RF JFET L&S Band Med Power CEL	10	625: ¥29.92	Reel	RoHS Compliant	2.45 GHz	79A	GaAs	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	11 dB	3 W	0.4 S	2 V	230 mA	-	-	-	-	N-Channel	-	-	-	-	-	-	-	-	1000	-	-	-	-	-	-	-	-	-	-	Single
NE3515S02-T1D-A Transistors RF GaAs Super Low Noise Pseudomorphic Transistors RF JFET Super Low Noise Pseudomorphic CEL	10	6670: ¥8.16	Reel	RoHS Compliant	12 GHz	S0-2	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	12.5 dB	165 mW	70 mS	- 3 V	88 mA	0.3 dB	4 V	-	-	-	-	-	-	-	-	-	14 dBm	-	-	-	-	-	-	-	-	-	-	-	-	-
NE3512S02-T1D-A Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET CEL	10	7650: ¥3.298	Reel	RoHS Compliant	12 GHz	S0-2	GaAs HEMT	+ 125 C	Transistors RF JFET	SMD/SMT	RF JFET	13.5 dB	165 mW	55 mS	- 3 V	70 mA	0.35 dB	4 V	-	-	-	-	-	-	-	-	-	-	-	10000	-	-	-	-	-	-	-	-	-	-	-