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规格书 |
![]() SI3529DV |
标准包装 | 3,000 |
FET 型 | N and P-Channel |
FET特点 | Logic Level Gate |
漏极至源极电压(VDSS) | 40V |
电流-连续漏极(编号)@ 25°C | 2.5A, 1.95A |
Rds(最大)@ ID,VGS | 125 mOhm @ 2.2A, 10V |
VGS(TH)(最大)@ Id | 3V @ 250µA |
栅极电荷(Qg)@ VGS | 7nC @ 10V |
输入电容(Ciss)@ Vds的 | 205pF @ 20V |
功率 - 最大 | 1.4W |
安装类型 | Surface Mount |
包/盒 | 6-TSOP (0.065", 1.65mm 宽度 ) |
供应商器件封装 | 6-TSOP |
包装材料 | Tape & Reel (TR) |
产品种类 | MOSFET |
RoHS | RoHS Compliant |
晶体管极性 | N and P-Channel |
漏源击穿电压 | 40 V |
源极击穿电压 | +/- 20 V |
连续漏极电流 | 2.25 A, 1.76 A |
抗漏源极RDS ( ON) | 0.125 Ohms, 0.215 Ohms |
配置 | Dual |
最高工作温度 | + 150 C |
安装风格 | SMD/SMT |
封装/外壳 | TSOP-6 |
封装 | Reel |
最低工作温度 | - 55 C |
功率耗散 | 1.15 W |
零件号别名 | SI3529DV-GE3 |
单位包 | 3000 |
最小起订量 | 3000 |
FET特点 | Logic Level Gate |
安装类型 | Surface Mount |
电流 - 连续漏极(Id ) @ 25 °C | 2.5A, 1.95A |
的Vgs(th ) (最大)@ Id | 3V @ 250µA |
漏极至源极电压(Vdss) | 40V |
供应商设备封装 | 6-TSOP |
开态Rds(最大)@ Id ,V GS | 125 mOhm @ 2.2A, 10V |
FET型 | N and P-Channel |
功率 - 最大 | 1.4W |
标准包装 | 3,000 |
输入电容(Ciss ) @ VDS | 205pF @ 20V |
闸电荷(Qg ) @ VGS | 7nC @ 10V |
封装/外壳 | 6-TSOP (0.065", 1.65mm Width) |
RoHS指令 | Lead free / RoHS Compliant |
Continuous Drain Current Id | :2.5A |
Drain Source Voltage Vds | :40V |
On Resistance Rds(on) | :0.1ohm |
Rds(on) Test Voltage Vgs | :10V |
Threshold Voltage Vgs | :3V |
功耗 | :1.15W |
Operating Temperature Min | :-55°C |
Operating Temperature Max | :150°C |
Transistor Case Style | :TSOP |
No. of Pins | :6 |
MSL | :MSL 1 - Unlimited |
Continuous Drain Current Id, N Channel | :2.5A |
Continuous Drain Current Id, P Channel | :-1.95A |
Current Id Max | :2.25A |
Drain Source Voltage Vds, N Channel | :40V |
Drain Source Voltage Vds, P Channel | :-40V |
Module Configuration | :Dual |
On Resistance Rds(on), N Channel | :0.1ohm |
On Resistance Rds(on), P Channel | :0.172ohm |
工作温度范围 | :-55°C to +150°C |
Weight (kg) | 0.0004 |
Tariff No. | 85412900 |
associated | D00840 ADP3623ARDZ-RL 3209885-M |
SI3529DV-T1-GE3也可以通过以下分类找到
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