vishay / semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 包装 | 3TO-247AC |
| 通道模式 | Enhancement |
| 最大漏源电压 | 500 V |
| 最大连续漏极电流 | 20 A |
| RDS -于 | 270@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 18 ns |
| 典型上升时间 | 59 ns |
| 典型关闭延迟时间 | 110 ns |
| 典型下降时间 | 58 ns |
| 工作温度 | -55 to 150 °C |
| 安装 | Through Hole |
| 标准包装 | Bulk |
| 标准包装 | Rail / Tube |
| Confezione fornitore | TO-247AC |
| Montaggio | Through Hole |
| Resistenza di sorgente di drain massima | 270@10V |
| TIPO二运河 | N |
| 每个芯片NUMERO二培元 | 1 |
| Package Width | 5.31(Max) |
| Modalità canale | Enhancement |
| PCB | 3 |
| Massima tensione di drain alla fonte | 500 |
| Tensione di fonte gate massima | ±20 |
| 符合UE | Compliant |
| Categoria | Power MOSFET |
| Dissipazione massima della potenza | 280000 |
| 诺姆标准苏拉confezione | TO-247 |
| Temperatura d'esercizio minima | -55 |
| 经conduttore | Through Hole |
| NUMERO DEI针 | 3 |
| Corrente di drain continua massima | 20 |
| Package Length | 15.87(Max) |
| Package Height | 20.7(Max) |
| Massima temperatura d'esercizio | 150 |
| 标签 | Tab |
| 单位包 | 25 |
| 最小起订量 | 500 |
| FET特点 | Standard |
| 封装 | Tube |
| 安装类型 | Through Hole |
| 电流 - 连续漏极（Id ） @ 25 °C | 20A (Tc) |
| 的Vgs（th ） （最大）@ Id | 4V @ 250µA |
| 供应商设备封装 | TO-247-3 |
| 其他名称 | *IRFP460PBF |
| 开态Rds（最大）@ Id ，V GS | 270 mOhm @ 12A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 280W |
| 漏极至源极电压（Vdss） | 500V |
| 输入电容（Ciss ） @ VDS | 4200pF @ 25V |
| 闸电荷（Qg ） @ VGS | 210nC @ 10V |
| 封装/外壳 | TO-247-3 |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Power MOSFET |
| 渠道类型 | N |
| 配置 | Single |
| 外形尺寸 | 15.87 x 5.31 x 20.7mm |
| 身高 | 20.7mm |
| 长度 | 15.87mm |
| 最大漏源电阻 | 0.27 Ω |
| 最高工作温度 | +150 °C |
| 最大功率耗散 | 280 W |
| 最低工作温度 | -55 °C |
| 每个芯片的元件数 | 1 |
| 包装类型 | TO-247AC |
| 引脚数 | 3 |
| 典型栅极电荷@ VGS | 210 nC V @ 10 |
| 典型输入电容@ VDS | 4200 pF V @ 25 |
| 宽度 | 5.31mm |
| 工厂包装数量 | 500 |
| 产品种类 | MOSFET |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | +/- 20 V |
| 连续漏极电流 | 20 A |
| 安装风格 | Through Hole |
| RDS（ON） | 270 mOhms |
| 功率耗散 | 280 W |
| 封装/外壳 | TO-247AC |
| 上升时间 | 59 ns |
| 漏源击穿电压 | 500 V |
| RoHS | RoHS Compliant By Exemption |
| 下降时间 | 58 ns |
| Continuous Drain Current Id | :20A |
| Drain Source Voltage Vds | :500V |
| On Resistance Rds(on) | :270mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :4V |
| 功耗 | :280W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-247AC |
| No. of Pins | :3 |
| MSL | :- |
| Current Temperature | :25°C |
| Full Power Rating Temperature | :25°C |
| Junction to Case Thermal Resistance A | :0.45°C/W |
| 引线间距 | :5.45mm |
| No. of Transistors | :1 |
| 工作温度范围 | :-55°C to +150°C |
| Pulse Current Idm | :80A |
| 端接类型 | :Through Hole |
| Voltage Vds Typ | :500V |
| Voltage Vgs Max | :20V |
| Voltage Vgs Rds on Measurement | :10V |
| Weight (kg) | 0.006 |
| Tariff No. | 85412900 |
| Current,Drain | 20A |
| GateCharge,Total | 210nC |
| PackageType | TO-247AC |
| 极化方式 | N-Channel |
| PowerDissipation | 280W |
| Resistance,DraintoSourceOn | 0.27Ohm |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 110ns |
| Time,Turn-OnDelay | 18ns |
| Transconductance,Forward | 13S |
| Voltage,Breakdown,DraintoSource | 500V |
| Voltage,Forward,Diode | 1.8V |
| Voltage,GatetoSource | ±20V |
| 案例 | TO247AC |
| Transistor type | N-MOSFET |
| 功率 | 280W |
| Drain-source voltage | 500V |
| 极化 | unipolar |
| Drain current | 20A |
| Multiplicity | 1 |
| Gross weight | 6.51 g |
| Collective package [pcs] | 500 |
| spg | 500 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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