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规格书 |
NTMFS4120NT1G |
文档 |
Multiple Devices 01/Oct/2008 |
Rohs | Lead free / RoHS Compliant |
产品更改通知 | Product Discontinuation 01/Oct/2008 |
标准包装 | 5,000 |
FET 型 | MOSFET N-Channel, Metal Oxide |
FET特点 | Logic Level Gate |
漏极至源极电压(VDSS) | 30V |
电流-连续漏极(编号)@ 25°C | 11A |
Rds(最大)@ ID,VGS | 4.5 mOhm @ 26A, 10V |
VGS(TH)(最大)@ Id | 2.5V @ 250µA |
栅极电荷(Qg)@ VGS | 50nC @ 4.5V |
输入电容(Ciss)@ Vds的 | 3600pF @ 24V |
功率 - 最大 | 900mW |
安装类型 | Surface Mount |
包/盒 | 8-TDFN Exposed Pad (5 Lead) |
供应商器件封装 | 6-DFN, 8-SO Flat Lead (5x6) |
包装材料 | Tape & Reel (TR) |
FET特点 | Logic Level Gate |
封装 | Tape & Reel (TR) |
安装类型 | Surface Mount |
电流 - 连续漏极(Id ) @ 25 °C | 11A (Ta) |
的Vgs(th ) (最大)@ Id | 2.5V @ 250µA |
封装/外壳 | 8-TDFN Exposed Pad (5 Lead) |
供应商设备封装 | 6-DFN, 8-SO Flat Lead (5x6) |
开态Rds(最大)@ Id ,V GS | 4.5 mOhm @ 26A, 10V |
FET型 | MOSFET N-Channel, Metal Oxide |
功率 - 最大 | 900mW |
标准包装 | 5,000 |
漏极至源极电压(Vdss) | 30V |
输入电容(Ciss ) @ VDS | 3600pF @ 24V |
闸电荷(Qg ) @ VGS | 50nC @ 4.5V |
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