JAN1N6126US

产品描述

Diode TVS Single Bi-Dir 51.7V 500W 2-Pin E-MELF

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规格书
Package	2G-MELF
Packaging	Bulk
Configuration	Single
Direction Type	Bi-Directional
Peak Pulse Power Dissipation	1500 W
Maximum Peak Pulse Current	30.1 A
Maximum Reverse Leakage Current	5 uA
Maximum Clamping Voltage	49.9 V
Maximum Reverse Stand-off Voltage	27.4 V
Minimum Breakdown Voltage	34.2 V
Test Current	30 mA
包装	2E-MELF
配置	Single
方向类型	Bi-Directional
峰值脉冲功率耗散	500 W
最大峰值脉冲电流	5.1 A
最大反向漏泄电流	1 uA
最大钳位电压	97.1 V
最大反向防区外电压	51.7 V
最小击穿电压	64.6 V
测试电流	20 mA
工作温度	-55 to 125 °C
安装	Surface Mount
标准包装	Bulk
工厂包装数量	100
品牌	Microsemi
RoHS	No

型号	厂家	产品描述
JAN1N6126	Semtech	Diode TVS Single Bi-Dir 51.7V 500W 2-Pin Case G-95
JAN1N6126A	microsemi	Diode TVS Single Bi-Dir 51.7V 500W 2-Pin Case E
JAN1N6126A	Semtech	Diode TVS Single Bi-Dir 51.7V 500W 2-Pin
JAN1N6126AUS	microsemi	Diode TVS Single Bi-Dir 51.7V 500W 2-Pin E-MELF
JAN1N6126AUS	Semtech	Diode TVS Single Bi-Dir 51.7V 500W 2-Pin SMD
JAN1N1124A	Microsemi	Diode Switching 200V 3.3A 2-Pin DO-4
JAN1N1124AR	Microsemi	Diode Switching 200V 3.3A 2-Pin DO-4
JAN1N1124RA	microsemi	STANDARD RECTIFIER (TRR MORE THAN 500NS), DO-4, CO
JAN1N1126A	Microsemi	Diode Switching 400V 3.3A 2-Pin DO-4
JAN1N1126AR	Microsemi	MILITARY SILICON POWER RECTIFIER
JAN1N1128A	microsemi	Diode Switching 600V 3.3A 2-Pin DO-4
JAN1N1128AR	Microsemi	Standard Rectifier
JAN1N1128RA	microsemi	Diode 600V 3.3A 2-Pin DO-4
JAN1N1186R	microsemi	Diode Switching 200V 35A 2-Pin DO-5
JAN1N1188	Microsemi	Diode Switching 400V 35A 2-Pin DO-5
JAN1N1188R	microsemi	Diode Switching 400V 35A 2-Pin DO-5
JAN1N1190	Microsemi	Diode Switching 600V 35A 2-Pin DO-5
JAN1N1190R	microsemi	Diode Switching 600V 35A 2-Pin DO-5
JAN1N1202A	microsemi	Diode Switching 200V 12A 2-Pin DO-4
JAN1N1202AR	microsemi	Diode Switching 200V 12A 2-Pin DO-4
JAN1N1204A	microsemi	Diode Switching 400V 12A 2-Pin DO-4
JAN1N1206A	Microsemi	Diode Switching 600V 12A 2-Pin DO-4

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